IRFHM8228PbF
V
DSS
V
GS
max
R
DS(on)
max
(@ V
GS
= 10V)
(@ V
GS
= 4.5V)
Qg
(typical)
(@T
C (Bottom)
= 25°C)
I
D
25
±20
5.2
8.7
9.0
25
V
V
m
S
HEXFET
®
Power MOSFET
S
S
G
nC
A
D
D
D
D
D
PQFN 3.3X3.3 mm
Applications
Control or synchronous MOSFET for synchronous buck converter
Features
Low Thermal Resistance to PCB (<3.7°C/W)
Low Profile (<1.05 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Consumer Qualification
Benefits
Enable better thermal dissipation
Increased Power Density
results in Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFHM8228PbF
Package Type
PQFN 3.3 mm x 3.3 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM8228TRPbF
Absolute Maximum Ratings
Parameter
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
19
15
Units
V
65
41
25
260
2.8
34
0.023
-55 to + 150
W
W/°C
°C
A
Notes
through
are on page 10
1
2016-2-23
IRFHM8228PbF
Min.
25
–––
–––
–––
1.35
–––
–––
–––
–––
–––
63
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
18
4.2
6.7
1.8
-6.6
–––
–––
–––
–––
–––
18
9.0
2.7
1.0
3.1
2.2
4.1
9.7
1.7
11
22
13
6.2
1667
456
195
Max.
–––
–––
5.2
8.7
2.35
–––
1.0
150
100
-100
–––
–––
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 20A
m
V
GS
= 4.5V, I
D
= 16A
V
V = V
GS
, I
D
= 25µA
mV/°C
DS
V
DS
= 20V, V
GS
= 0V
µA
V
DS
= 20V, V
GS
= 0V, T
J
= 125°C
nA V
GS
= 20V
V
GS
= -20V
S
V
DS
= 10V, I
D
= 20A
nC V
GS
= 10V, V
DS
= 13V, I
D
= 20A
nC
nC
ns
pF
V
DS
= 13V
V
GS
= 4.5V
I
D
= 20A
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
BV
DSS
Breakdown Voltage Temp. Coefficient
BV
DSS
/T
J
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 16V, V
GS
= 0V
V
DD
= 13V, V
GS
= 4.5V
I
D
= 20A
R
G
=1.8
V
GS
= 0V
V
DS
= 10V
ƒ = 1.0MHz
Avalanche Characteristics
E
AS
Parameter
Single Pulse Avalanche Energy
Typ.
–––
Max.
50
Units
mJ
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
Thermal Resistance
Parameter
R
JC
(Bottom) Junction-to-Case
Junction-to-Case
R
JC
(Top)
R
JA
R
JA
(<10s)
Junction-to-Ambient
Junction-to-Ambient
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
14
10
25
A
260
1.0
21
15
V
ns T
J
= 25°C, I
F
= 20A, V
DD
= 13V
nC di/dt = 260A/µs
Typ.
–––
–––
–––
–––
Max.
3.7
41
44
29
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
D
G
S
Units
°C/W
2
2016-2-23
1000
TOP
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.0V
2.75V
2.5V
IRFHM8228PbF
1000
TOP
VGS
10V
7.0V
4.5V
4.0V
3.5V
3.0V
2.75V
2.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
100
BOTTOM
10
BOTTOM
1
10
0.1
2.5V
60µs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
1
0.1
2.5V
60µs PULSE WIDTH
Tj = 150°C
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 20A
VGS = 10V
ID, Drain-to-Source Current (A)
100
10
T J = 150°C
T J = 25°C
1
VDS = 10V
60µs
PULSE WIDTH
0.1
0
2
4
6
8
VGS, Gate-to-Source Voltage (V)
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
ID= 20A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 20V
VDS= 13V
C, Capacitance (pF)
VDS= 5.0V
Ciss
1000
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
5
10
15
20
25
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
2016-2-23
1000
IRFHM8228PbF
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100
100µsec
Limited by source bonding
technology
T J = 150°C
10
10
T J = 25°C
1
VGS = 0V
0.1
0.0
0.4
0.8
1.2
1.6
2.0
VSD, Source-to-Drain Voltage (V)
1
1msec
10msec
DC
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
0.01
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
70
60
ID, Drain Current (A)
VGS(th) , Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
3.0
Limited by source
bonding technology
2.5
50
40
30
20
10
0
25
50
75
100
125
150
T C , Case Temperature (°C)
2.0
ID = 25µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
1.5
1.0
0.5
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
10
Thermal Response ( Z thJC ) °C/W
Fig 10.
Drain-to–Source Breakdown Voltage
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
2016-2-23
RDS(on), Drain-to -Source On Resistance (m
)
IRFHM8228PbF
18
200
EAS , Single Pulse Avalanche Energy (mJ)
ID = 20A
14
160
ID
TOP
4.4A
9.2A
BOTTOM 20A
120
10
T J = 125°C
6
T J = 25°C
2
2
4
6
8
10
12
14
16
18
20
80
40
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 12.
On-Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj
= 125°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 14.
Single Avalanche Event: Pulse Current vs. Pulse Width
5
2016-2-23
传感器
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