MUBW 50-12 E8
Converter - Brake - Inverter Module
(CBI3)
21
D11
1
D12
D13
2
D14
D15
7
3
D16
14
23
24
8
NTC
T7
22
D7
T1
16
15
6
T2
11
10
D2
12
D1
T3
18
17
T4
D3
T5
20
19
T6
13
D5
5
D4
4
D6
See outline drawing for pin arrangement
E72873
9
Three Phase
Rectifier
V
RRM
= 1600 V
I
FAVM
= 70 A
I
FSM
= 700 A
Brake Chopper
V
CES
= 1200 V
I
C25
= 52 A
V
CE(sat)
= 2.2 V
Three Phase
Inverter
V
CES
= 1200 V
I
C25
= 90 A
V
CE(sat)
= 1.9 V
e
s
a
Maximum Ratings
1600
50
140
700
135
V
A
A
A
W
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
1.1
1.1
0.8
1.3
0.05
V
V
mA
mA
0.94 K/W
-o
Application: AC motor drives with
• Input from single or three phase grid
• Three phase synchronous or
asynchronous motor
• electric braking operation
Features
• High level of integration - only one
power semiconductor module
required for the whole drive
• IGBT technology with low saturation
voltage, low switching losses and tail
current, high RBSOA and short circuit
ruggedness
• Epitaxial free wheeling diodes with
Hiperfast and soft reverse recovery
• Industry standard package with
insulated copper base plate and
soldering pins for PCB mounting
• Temperature sense included
Input Rectifier Bridge D11 - D16
Symbol
V
RRM
I
FAV
I
DAVM
I
FSM
P
tot
Conditions
T
C
= 25°C
Symbol
Conditions
V
F
I
R
R
thJC
I
F
= 50 A; T
VJ
= 25°C
T
VJ
= 125°C
V
R
= V
RRM
; T
VJ
= 25°C
T
VJ
= 125°C
(per diode)
IXYS reserves the right to change limits, test conditions and dimensions.
p
h
T
C
= 80°C; sine 180°
T
C
= 80°C; rectangular; d =
1
/
3
; bridge
T
VJ
= 25°C; t = 10 ms; sine 50 Hz
u
t
20070912a
© 2007 IXYS All rights reserved
1-8
MUBW 50-12 E8
Output Inverter T1 - T6
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Conditions
T
VJ
= 25°C to 150°C
Continuous
T
C
= 25°C
T
C
= 80°C
V
GE
=
±
15 V; R
G
= 22
Ω;
T
VJ
= 125°C
RBSOA; Clamped inductive load; L = 100 µH
V
CE
= 900 V; V
GE
=
±
15 V; R
G
= 22
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Maximum Ratings
1200
±
20
90
62
100
V
CES
10
350
V
V
A
A
A
µs
W
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
T1-T6
V
0
= 0.98 V; R
0
= 23.2 m
Ω
T7
V
0
= 0.95 V; R
0
= 45 m
Ω
Diode (typ. at T
J
= 125°C)
Symbol
Conditions
t
D7
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
1.9
2.1
4.5
0.8
2.4
6.5
D1-D6
V
0
= 1.27 V; R
0
= 5.8 m
Ω
V
0
= 1.25 V; R
0
= 31.2 m
Ω
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
I
C
= 2 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 0 V; V
GE
=
±
20 V
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 50 A
V
GE
= ±15 V; R
G
= 22
Ω
u
V
0.8
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
nC
0.35 K/W
200
A
A
2.5
V
V
A
ns
0.61 K/W
I
C
= 50 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
V
V
D11-D16
V
0
= 0.83 V; R
0
= 5.5 m
Ω
s
e
-o
80
50
680
30
6
4
3.8
350
110
70
2.1
1.5
41
200
Thermal Response
IGBT (typ.)
T1-T6
C
th1
= 0.206 J/K; R
th1
= 0.262 K/W
C
th2
= 1.307 J/K; R
th2
= 0.088 K/W
T7
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600 V; V
GE
= 15 V; I
C
= 50 A
(per IGBT)
h
a
C
th1
= 0.128 J/K; R
th1
= 0.421 K/W
C
th2
= 0.961 J/K; R
th2
= 0.129 K/W
Diode (typ.)
D1-D6
C
th1
= 0.138 J/K; R
th1
= 0.48 K/W
C
th2
= 0.957 J/K; R
th2
= 0.13 K/W
D7
Output Inverter D1 - D6
Symbol
I
F25
I
F80
Conditions
T
C
= 25°C
T
C
= 80°C
p
Maximum Ratings
C
th1
= 0.038 J/K; R
th1
= 1.74 K/W
C
th2
= 0.435 J/K; R
th2
= 0.36 K/W
D11-D16
C
th1
= 0.086 J/K; R
th1
= 0.738 K/W
C
th2
= 0.621 J/K; R
th2
= 0.202 K/W
Symbol
V
F
I
RM
t
rr
R
thJC
Conditions
I
F
= 50 A; V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 60 A; di
F
/dt = -500 A/µs; T
VJ
= 125°C
V
R
= 600 V; V
GE
= 0 V
(per diode)
Characteristic Values
min.
typ. max.
20070912a
© 2007 IXYS All rights reserved
2-8
MUBW 50-12 E8
Brake Chopper T7
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
Conditions
T
VJ
= 25°C to 150°C
Continuous
T
C
= 25°C
T
C
= 80°C
V
GE
=
±
15 V; R
G
= 39
Ω;
T
VJ
= 125°C
RBSOA; Clamped inductive load; L = 100 µH
V
CE
= 900 V; V
GE
=
±
15 V; R
G
= 39
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Conditions
Maximum Ratings
1200
±
20
52
35
50
V
CES
10
225
µs
W
V
V
A
A
A
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
2.2
2.5
4.5
0.1
2.8
6.5
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
off
C
ies
Q
Gon
R
thJC
I
C
= 35 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 1 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 0 V; V
GE
=
±
20 V
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 35 A
V
GE
= ±15 V; R
G
= 39
Ω
V
CE
= 25 V; V
GE
= 0 V; f = 1 MH z
V
CE
= 600 V; V
GE
= 15 V; I
C
= 35 A
-o
200
85
50
440
50
2.6
2
150
s
e
a
Brake Chopper D7
Symbol
V
RRM
I
F25
I
F80
Symbol
V
F
I
R
I
RM
t
rr
R
thJC
Conditions
p
h
Maximum Ratings
1200
25
16
V
A
A
T
VJ
= 25°C to 150°C
T
C
= 25°C
T
C
= 80°C
Conditions
Characteristic Values
min.
typ. max.
3.0
2.3
0.1
16
130
3.4
0.1
V
V
mA
mA
A
ns
2.1 K/W
20070912a
I
F
= 35 A; T
VJ
= 25°C
T
VJ
= 125°C
V
R
= V
RRM
; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 15 A; di
F
/dt = -400 A/µs; T
VJ
= 125°C
V
R
= 600 V
© 2007 IXYS All rights reserved
u
V
0.1
mA
mA
nA
ns
ns
ns
ns
mJ
nF
nC
0.55 K/W
t
V
V
3-8
MUBW 50-12 E8
Input Rectifier Bridge D11 - D16
120
A
100
I
F
80
T
VJ
= 125°C
T
VJ
= 25°C
500
A
400
I
FSM
300
60
200
40
100
50Hz, 80% V
RRM
0
0.001
0.01
T
VJ
= 150°C
T
VJ
= 150°C
10
3
T
VJ
= 45°C
2
T
VJ
= 45°C
10
4
As
It
2
20
0
0.0
10
2
0.1
t
s
1
1
2
3
4 5 6 7 ms 10
89
t
0.5
1.0
1.5
2.0 V 2.5
V
F
Fig. 1 Forward current versus voltage
drop per diode
450
400
W
350
300
P
tot
250
200
150
100
50
0
0
Fig. 2 Surge overload current
u
-o
e
s
a
20 40 60 80 100 120 140 160 180 0
A
I
d(AV)M
R
thA
:
0.05 K/W
0.15 K/W
0.3 K/W
0.5 K/W
1 K/W
2 K/W
5 K/W
h
20
40
60
80 100 120 140 C
T
amb
t
160
A
140
I
d(AV)
120
100
80
60
40
20
0
0
s
1
Fig. 3 I
2
t versus time per diode
20 40 60 80 100 120 140 C
T
C
Fig. 4
Power dissipation versus direct output current and ambient temperature, sin 180°
1
K/W
0.1
Z
thJC
0.01
0.001
0.001
p
Fig. 5 Max. forward current versus
case temperature
0.01
0.1
t
Fig. 6 Transient thermal impedance junction to case
20070912a
© 2007 IXYS All rights reserved
5-8
微控制器 MCU
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