NTD6414AN, NVD6414AN
N-Channel Power MOSFET
100 V, 32 A, 37 mW
Features
•
•
•
•
Low R
DS(on)
High Current Capability
100% Avalanche Tested
NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Continuous Drain
Current R
qJC
Power Dissipation
R
qJC
Pulsed Drain Current
Steady
State
Steady
State
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
P
D
I
DM
T
J
, T
stg
I
S
E
AS
Symbol
V
DSS
V
GS
I
D
Value
100
±20
32
22
100
117
−55 to
+175
32
154
W
A
°C
A
mJ
Unit
V
V
A
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I
D
MAX
(Note 1)
32 A
V
(BR)DSS
100 V
R
DS(on)
MAX
37 mW @ 10 V
D
N−Channel
G
S
4
4
1 2
3
DPAK
CASE 369AA
STYLE 2
1
2
3
IPAK
CASE 369D
STYLE 2
t
p
= 10
ms
Operating and Storage Temperature Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 50 Vdc, V
GS
= 10 Vdc,
I
L(pk)
= 32 A, L = 0.3 mH, R
G
= 25
W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
T
L
260
°C
MARKING DIAGRAM
& PIN ASSIGNMENTS
4 Drain
AYWW
64
14ANG
4 Drain
AYWW
64
14ANG
3
Source
1
Gate
2
Drain
A
Y
WW
6414AN
G
= Assembly Location*
= Year
= Work Week
= Device Code
= Pb−Free Package
3
Source
Publication Order Number:
NTD6414AN/D
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Case (Drain) Steady State
Junction−to−Ambient (Note 1)
Symbol
R
qJC
R
qJA
Max
1.5
37
Unit
°C/W
1
Gate
2
Drain
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2014
1
September, 2014 − Rev. 2
NTD6414AN, NVD6414AN
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
V
GS
= 0 V,
V
DS
= 100 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
100
107
1.0
100
"100
2.0
8.3
V
GS
= 10 V, I
D
= 32 A
V
GS
= 5.0 V, I
D
= 10 A
30
18
37
4.0
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On−Resistance
Forward Transconductance
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
gFS
V
DS
= 0 V, V
GS
=
"20
V
V
GS
= V
DS
, I
D
= 250
mA
V
mV/°C
mW
S
pF
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Gate Resistance
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
V
SD
T
J
= 25°C
T
J
= 125°C
V
GS
= 10 V, V
DD
= 80 V,
I
D
= 32 A, R
G
= 6.1
W
11
52
38
48
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
R
G
V
GS
= 10 V, V
DS
= 80 V, I
D
= 32 A
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 25 V
1450
230
95
40
1.7
8.0
20
5.9
1.9
V
W
nC
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
0.87
0.76
68
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= 32 A
51
16
195
nC
ns
1.2
V
V
GS
= 0 V, I
S
= 32 A
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
RR
T
a
T
b
Q
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTD6414AN, NVD6414AN
TYPICAL CHARACTERISTICS
70
T
J
= 25°C
60
I
D
, DRAIN CURRENT (A)
50
40
30
20
5.0 V
10
0
0
4.5 V
1
2
3
4
5
5.5 V
70
7.5 V
6.5 V
I
D
, DRAIN CURRENT (A)
V
DS
w
10 V
60
50
40
30
20
10
0
2
3
4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
= −55°C
5
6
7
8
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T
J
= 125°C
T
J
= 25°C
10 V
6.0 V
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.07
I
D
= 32 A
T
J
= 25°C
0.10
V
GS
= 10 V
0.08
T
J
= 175°C
T
J
= 125°C
0.06
0.05
0.06
0.04
0.04
T
J
= 25°C
0.02
T
J
= −55°C
0.00
10
15
20
25
30
35
0.03
0.02
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Region versus Gate Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
10000
3
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
D
= 32 A
V
GS
= 10 V
V
GS
= 0 V
T
J
= 150°C
1000
2.5
2
1.5
I
DSS
, LEAKAGE (nA)
100
T
J
= 125°C
1
0.5
−50
10
−25
0
25
50
75
100
125
150
175
10
20
30
40
50
60
70
80
90 100
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
NTD6414AN, NVD6414AN
TYPICAL CHARACTERISTICS
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
2800
2400
C, CAPACITANCE (pF)
2000
1600
1200
800
400
0
0
C
rss
C
oss
20
40
60
80
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
100
C
iss
T
J
= 25°C
V
GS
= 0 V
Q
T
8
V
DS
6
Q
gs
Q
gd
V
GS
100
80
60
4
40
2
I
D
= 32 A
T
J
= 25°C
0
5
10
15
20
25
30
Q
g
, TOTAL GATE CHARGE (nC)
35
20
0
0
40
Figure 7. Capacitance Variation
1000
V
DS
= 80 V
I
D
= 32 A
V
GS
= 10 V
t, TIME (ns)
100
t
r
t
f
t
d(off)
10
t
d(on)
Figure 8. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
35
I
S
, SOURCE CURRENT (A)
30
25
20
15
10
5
0
0.4
T
J
= 25°C
V
GS
= 0 V
1
1
10
R
G
, GATE RESISTANCE (W)
100
0.5
0.6
0.7
0.8
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
0.9
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
100
AVALANCHE ENERGY (mJ)
10
ms
I
D
, DRAIN CURRENT (A)
100
ms
1 ms
V
GS
= 10 V
SINGLE PULSE
T
C
= 25°C
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1000
10 ms
dc
160
140
120
100
80
60
40
20
0
25
50
75
100
125
150
T
J
, STARTING JUNCTION TEMPERATURE
175
I
D
= 32 A
10
1
0.1
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
10
NTD6414AN, NVD6414AN
TYPICAL CHARACTERISTICS
10
1 D = 0.5
R(t) (°C/W)
0.2
0.1 0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
0.01
t, PULSE TIME (s)
0.1
1
10
Figure 13. Thermal Response
ORDERING INFORMATION
Device
NTD6414ANT4G
NTD6414AN−1G
NVD6414ANT4G*
Package
DPAK
(Pb−Free)
IPAK
(Pb−Free)
DPAK
(Pb−Free)
Shipping†
2500 / Tape & Reel
75 Units / Rail
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
*NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
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5
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