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MMBT2369A — NPN Switching Transistor
November 2014
MMBT2369A
NPN Switching Transistor
Description
This device is designed for high speed saturated
switching at collector currents of 10 mA to 100 mA.
Sourced from process 21.
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
Ordering Information
Part Number
MMBT2369A
Marking
1S
Package
SOT-23 3L
Packing Method
Tape and Reel
Absolute Maximum Ratings
(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Parameter
Value
15
40
4.5
200
-55 to +150
Unit
V
V
V
mA
°C
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
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