Fast Recovery
Epitaxial Diode
(FRED) Module
Preliminary data
V
RSM
V
1200
V
RRM
V
1200
Type
MEA 250-12DA
1
2
3
MEA 250-12 DA
MEK 250-12 DA
MEE 250-12 DA
V
RRM
= 1200 V
I
FAVM
= 260 A
t
rr
= 450 ns
2
1
3
MEK 250-12DA
1
2
3
MEE 250-012DA
1
2
3
Symbol
I
FRMS
I
FAVM
ÿÿ
x
I
FRM
I
FSM
Test Conditions
T
C
= 75
°C
T
C
= 75
°C;
rectangular, d = 0.5
t
P
< 10
ms;
rep. rating, pulse width limited by T
VJM
T
VJ
= 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
367
260
1480
2400
2640
2160
2380
28800
29300
23300
23800
-40...+150
-40...+125
110
A
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
°C
°C
°C
W
V~
V~
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
I
2
t
T
VJ
= 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Features
International standard package
with DCB ceramic base plate
Planar passivated chips
Short recovery time
Low switching losses
Soft recovery behaviour
Isolation voltage 3600 V~
UL registered E 72873
q
q
q
q
q
q
q
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
T
stg
T
Smax
P
tot
V
ISOL
M
d
d
S
d
A
a
Weight
Symbol
I
R
Test Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 150 A;
I
F
= 260 A;
V
T0
r
T
R
thJH
R
thJC
t
rr
I
RM
V
R
= V
RRM
V
R
= 0.8 • V
RRM
V
R
= 0.8 • V
RRM
T
VJ
T
VJ
T
VJ
T
VJ
= 125°C
= 25°C
= 125°C
= 25°C
T
c
= 25°C
50/60 Hz, RMS t = 1 min
t=1s
I
ISOL
£
1 mA
Mounting torque (M6)
Terminal connection torque (M6)
Creeping distance on surface
Strike distance through air
Maximum allowable acceleration
875
3000
3600
Applications
Antiparallel diode for high frequency
switching devices
Free wheeling diode in converters
and motor control circuits
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
q
q
q
q
q
2.25-2.75/20-25 Nm/lb.in.
4.50-5.50/40-48 Nm/lb.in.
12.7
9.6
50
150
mm
mm
m/s
2
g
q
q
q
q
Advantages
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Characteristic Values (per diode)
typ.
max.
12
3
60
1.38
1.69
1.54
1.80
1.16
1.46
0.228
0.143
T
VJ
= 100°C
T
VJ
= 25°C
T
VJ
= 100°C
450
500
55
83
mA
mA
mA
V
V
V
V
V
mW
K/W
K/W
ns
A
A
Dimensions in mm (1 mm = 0.0394")
V
F
For power-loss calculations only
DC current
DC current
I
F
= 300 A
V
R
= 600 V
-di/dt = 400 A/ms
x
I
FAVM
rating includes reverse blocking losses at T
VJM
, V
R
= 0.6 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1-2
749
MEA 250-12 DA MEE 250-12 DA
MEK 250-12 DA
500
A
450
400
I
F
350
300
250
200
150
20
100
50
0
0.0
0.5
1.0
1.5
V
F
2.0 V 2.5
10
0
100
A/
m
s 1000
-di
F
/dt
40
20
0
0
200
400
600 A/
m
s 1000
800
-di
F
/dt
80
µC
T
VJ
= 100°C
70
V
R
= 600V
Q
r
60
200
A
T
VJ
= 100°C
180
V
R
= 600V
160
I
RM
I
F
= 300A; max.
140
I
F
= 300A; typ.
I
F
= 250A; typ.
120
I = 125A; typ.
F
100
80
60
T
VJ
=125°C
T
VJ
= 25°C
I
F
= 300A; max.
I = 300A; typ.
50
I
F
= 250A; typ.
F
I
F
= 125A; typ.
40
30
Fig. 1 Forward current I
F
versus
voltage drop V
F
per leg
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
40
80
120 °C 160
T
VJ
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
1200
ns
1000
t
rr
800
600
400
200
0
0
200
400
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
100
A
V
90
80
V
FR
70
60
50
40
1.0
T
VJ
= 100°C
V
R
= 600V
T
VJ
= 125°C
I
F
= 260A
t
fr
V
FR
2.5
µs
2.0
t
fr
1.5
K
f
I
RM
Q
r
I
F
= 300A; max.
I
F
= 300A; typ.
I
F
= 250A; typ.
I
F
= 125A; typ.
30
20
10
600 A/
m
s 1000
800
-di
F
/dt
0
0
400
0.0
800
1200 A/
m
s
di
F
/dt
0.5
Fig. 4 Dynamic parameters Q
r
, I
RM
versus junction temperature T
VJ
0.25
K/W
0.20
Z
thJS
thJH
0.15
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
Constants for Z
thJS
calculation:
i
1
2
3
4
R
thi
(K/W)
0.002
0.008
0.054
0.164
t
i
(s)
0.08
0.024
0.112
0.464
0.10
0.05
0.00
0.001
0.01
0.1
1s
10
t
Fig. 7 Transient thermal impedance junction to heatsink
© 2000 IXYS All rights reserved
2-2
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