FastIRFET™
IRFH7885PbF
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max
(@ V
GS
= 10V)
Q
g (typical)
R
g (typical)
(@T
C (Bottom)
= 25°C)
I
D
80
3.9
36
1.2
146
V
m
nC
A
PQFN 5X6 mm
Applications
Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies
Secondary Side Synchronous Rectifier
BLDC Motor Drive
Features
Low R
DS(ON)
(< 3.9m)
Low Thermal Resistance to PCB (<0.8°C/W)
100% Rg Tested
Low Profile (<1.05 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1
Benefits
Lower Conduction Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFH7885PbF
Package Type
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH7885TRPbF
Units
V
Absolute Maximum Ratings
Parameter
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
22
146
93
250
3.6
156
0.03
A
W
W/°C
°C
-55 to + 150
Notes
through
are on page 8
1
www.irf.com
© 2015 International Rectifier
Submit Datasheet Feedback
May 12 ,2015
IRFH7885PbF
Min.
80
–––
–––
2.0
–––
–––
–––
–––
111
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
43
3.1
–––
-5.8
–––
–––
–––
–––
36
7.1
2.6
12
14.3
14.6
101
1.2
5.4
6.2
13
4.6
2311
1373
28
Max.
–––
–––
3.9
3.6
–––
1.0
100
-100
–––
54
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
V
mV/°C
m
V
mV/°C
µA
nA
S
nC
nC
ns
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 50A
V
DS
= V
GS
, I
D
= 150µA
V
DS
= 64V, V
GS
= 0V
V
GS
= 20V
V
GS
= -20V
V
DS
= 25V, I
D
= 50A
V
DS
= 40V
V
GS
= 10V
I
D
= 50A
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
BV
DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
V
GS(th)
I
DSS
Drain-to-Source Leakage Current
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs
Forward Transconductance
Q
g
Total Gate Charge
Q
gs1
Pre-Vth Gate-to-Source Charge
Q
gs2
Post-Vth Gate-to-Source Charge
Q
gd
Gate-to-Drain Charge
Q
godr
Gate Charge Overdrive
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
Q
oss
Output Charge
R
G
Gate Resistance
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
Fall Time
t
f
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Diode Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
V
DS
= 40V, V
GS
= 0V
V
DD
= 40V, V
GS
= 10V
I
D
= 50A
R
G
= 1.0
V
GS
= 0V
pF V
DS
= 40V
ƒ = 1.0MHz
Min.
Typ.
Max. Units
Conditions
MOSFET symbol
–––
–––
146
showing the
A
integral reverse
–––
–––
250
p-n junction diode.
–––
0.8
1.3
V
T
J
= 25°C, I
S
= 50A, V
GS
=0V
–––
45
68
ns T
J
= 25°C, I
F
= 50A, V
DD
= 40V
–––
58
87
nC di/dt = 100A/µs
D
G
S
Typ.
–––
–––
Parameter
Typ.
–––
–––
–––
–––
Max.
202
50
Max.
0.8
19
35
23
Units
mJ
A
Units
°C/W
Thermal Resistance
R
JC
(Bottom) Junction-to-Case
Junction-to-Case
R
JC
(Top)
R
JA
R
JA
(<10s)
Junction-to-Ambient
Junction-to-Ambient
2
www.irf.com
© 2015 International Rectifier
Submit Datasheet Feedback
May 12 ,2015
1000
TOP
VGS
15V
10V
7.0V
6.5V
5.5V
5.0V
4.5V
4.0V
IRFH7885PbF
1000
TOP
VGS
15V
10V
7.0V
6.5V
5.5V
5.0V
4.5V
4.0V
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
BOTTOM
10
BOTTOM
10
4.0V
1
1
4.0V
0.1
60µs
PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
0.1
60µs
PULSE WIDTH
Tj = 150°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 50A
1.7
ID, Drain-to-Source Current(A)
VGS = 10V
100
10
TJ = 150°C
TJ = 25°C
1.4
1.1
1
VDS = 50V
0.1
1
2
3
4
5
6
0.8
60µs PULSE WIDTH
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
14
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
ID= 50A
VDS = 64V
VDS = 40V
VDS= 16V
10000
C, Capacitance (pF)
Ciss
1000
Coss
Crss
100
10
1
10
VDS , Drain-to-Source Voltage (V)
100
0
5
10
15
20
25
30
35
40
45
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
www.irf.com
© 2015 International Rectifier
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
Submit Datasheet Feedback
May 12 ,2015
1000
ID, Drain-to-Source Current (A)
IRFH7885PbF
OPERATION IN THIS AREA
LIMITED BY RDS(on)
ISD, Reverse Drain Current (A)
100
100µsec
100
10
Limited by Package
1msec
10
TJ = 150°C
TJ = 25°C
1
10msec
DC
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD , Source-to-Drain Voltage (V)
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
0.01
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
160
VGS(th), Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
4.5
4.0
3.5
3.0
2.5
2.0
1.5
ID = 150µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
140
ID, Drain Current (A)
120
100
80
60
40
20
0
25
50
75
100
125
150
TC , Case Temperature (°C)
-75 -50 -25
0
25
50
75 100 125 150
TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
1
D = 0.50
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.0001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
www.irf.com
© 2015 International Rectifier
Submit Datasheet Feedback
May 12 ,2015
1000
IRFH7885PbF
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj
= 125°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 12.
Typical Avalanche Current vs. Pulse Width
RDS(on), Drain-to -Source On Resistance (m )
10
900
ID = 50A
EAS , Single Pulse Avalanche Energy (mJ)
800
700
600
500
400
300
200
100
0
8
ID
TOP
10A
19A
BOTTOM 50A
6
TJ = 125°C
4
TJ = 25°C
2
4
6
8
10
12
14
16
18
20
25
50
75
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting TJ , Junction Temperature (°C)
Fig 13.
On–Resistance vs. Gate Voltage
Fig 14.
Maximum Avalanche Energy vs. Drain Current
5
www.irf.com
© 2015 International Rectifier
Submit Datasheet Feedback
May 12 ,2015
51单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
