Rectifier Diode, 1 Phase, 1 Element, 35A, 50V V(RRM), Silicon,
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| Objectid | 1221161995 |
| 包装说明 | O-PEDB-N2 |
| Reach Compliance Code | compliant |
| Country Of Origin | Thailand |
| ECCN代码 | EAR99 |
| YTEOL | 4.62 |
| 其他特性 | HIGH RELIABILITY |
| 应用 | GENERAL PURPOSE |
| 配置 | SINGLE |
| 二极管元件材料 | SILICON |
| 二极管类型 | RECTIFIER DIODE |
| 最大正向电压 (VF) | 1.1 V |
| JESD-30 代码 | O-PEDB-N2 |
| 最大非重复峰值正向电流 | 400 A |
| 元件数量 | 1 |
| 相数 | 1 |
| 端子数量 | 2 |
| 最高工作温度 | 175 °C |
| 最低工作温度 | -65 °C |
| 最大输出电流 | 35 A |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | ROUND |
| 封装形式 | DISK BUTTON |
| 最大重复峰值反向电压 | 50 V |
| 最大反向电流 | 5 µA |
| 表面贴装 | YES |
| 端子形式 | NO LEAD |
| 端子位置 | END |

| MR3500 | MR3510 | MR3508 | MR3506 | MR3504 | MR3502 | MR3501 | |
|---|---|---|---|---|---|---|---|
| 描述 | Rectifier Diode, 1 Phase, 1 Element, 35A, 50V V(RRM), Silicon, | RECTIFIER DIODE,100V V(RRM) | RECTIFIER DIODE,100V V(RRM) | RECTIFIER DIODE,100V V(RRM) | RECTIFIER DIODE,100V V(RRM) | RECTIFIER DIODE,100V V(RRM) | RECTIFIER DIODE,100V V(RRM) |
| 二极管类型 | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
| 最大非重复峰值正向电流 | 400 A | 400 A | 400 A | 400 A | 400 A | 400 A | 400 A |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 最大输出电流 | 35 A | 35 A | 35 A | 35 A | 35 A | 35 A | 35 A |
| 最大重复峰值反向电压 | 50 V | 1000 V | 100 V | 600 V | 400 V | 200 V | 100 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES |
| 是否Rohs认证 | 符合 | 符合 | - | 符合 | 符合 | 符合 | 符合 |
| Reach Compliance Code | compliant | compli | - | compli | compli | compli | compli |
| ECCN代码 | EAR99 | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | HIGH RELIABILITY | HIGH RELIABILITY | - | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
| 应用 | GENERAL PURPOSE | GENERAL PURPOSE | - | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE |
| 配置 | SINGLE | SINGLE | - | SINGLE | SINGLE | SINGLE | SINGLE |
| 二极管元件材料 | SILICON | SILICON | - | SILICON | SILICON | SILICON | SILICON |
| 最大正向电压 (VF) | 1.1 V | 1.1 V | - | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| JESD-30 代码 | O-PEDB-N2 | O-PEDB-N2 | - | O-PEDB-N2 | O-PEDB-N2 | O-PEDB-N2 | O-PEDB-N2 |
| 相数 | 1 | 1 | - | 1 | 1 | 1 | 1 |
| 端子数量 | 2 | 2 | - | 2 | 2 | 2 | 2 |
| 最高工作温度 | 175 °C | 175 °C | - | 175 °C | 175 °C | 175 °C | 175 °C |
| 最低工作温度 | -65 °C | -65 °C | - | -65 °C | -65 °C | -65 °C | -65 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | ROUND | ROUND | - | ROUND | ROUND | ROUND | ROUND |
| 封装形式 | DISK BUTTON | DISK BUTTON | - | DISK BUTTON | DISK BUTTON | DISK BUTTON | DISK BUTTON |
| 最大反向电流 | 5 µA | 5 µA | - | 5 µA | 5 µA | 5 µA | 5 µA |
| 端子形式 | NO LEAD | NO LEAD | - | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| 端子位置 | END | END | - | END | END | END | END |
| 厂商名称 | - | EIC [EIC discrete Semiconductors] | - | EIC [EIC discrete Semiconductors] | EIC [EIC discrete Semiconductors] | EIC [EIC discrete Semiconductors] | EIC [EIC discrete Semiconductors] |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved