SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4593, REV. B
SHD118246
SHD118246B
HERMETIC SCHOTTKY RECTIFIER
Low Forward Voltage Drop
Features:
Soft Reverse Recovery at Low and High Temperature
Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings
Characteristics
Peak Inverse Voltage
Max. Average Forward Current
Max. Average Forward Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche Energy
Repetitive Avalanche Current
Maximum Thermal Resistance
Max. Junction Temperature
Max. Storage Temperature
Symbol
V
RWM
I
F(AV)
I
F(AV)
I
FSM
E
AS
I
AR
R
JC
T
J
T
stg
Condition
-
50% duty cycle, rectangular
wave form (Single)
50% duty cycle, rectangular
wave form (Common Cathode)
8.3 ms, half Sine wave
(per leg)
T
J
= 25
C,
I
AS
= 3.0 A,
L = 4.4 mH (per leg)
I
AS
decay linearly to 0 in 1
s
limited by T
J
max V
A
=1.5V
R
DC operation
-
-
Max.
200
15
30
280
20
3.0
1.7
-65 to +175
-65 to +175
Units
V
A
A
A
mJ
A
C/W
C
C
Electrical Characteristics
Characteristics
Max. Forward Voltage Drop
(per leg)
Max. Reverse Current
(per leg)
Max. Junction Capacitance
(per leg)
Symbol
V
F1
V
F2
I
R1
I
R2
C
T
Condition
@ 15A, Pulse, T
J
= 25
C
@ 15A, Pulse, T
J
= 125
C
@V
R
= 200V, Pulse,
T
J
= 25
C
@V
R
= 200V, Pulse,
T
J
= 125
C
@V
R
= 5V, T
C
= 25
C
f
SIG
= 1MHz,
V
SIG
= 50mV (p-p)
Max.
0.92
0.76
0.35
8.0
300
Units
V
V
mA
mA
pF
©2018 Sensitron Semiconductor
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
www.sensitron.com
sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4593, REV. B
MECHANICAL DIMENSIONS: In Inches / mm
.370±.010
(9.40±.254)
SHD118246
SHD118246B
SHD-5B
.370±.010
(9.40±.254)
.520±.020
(13.2±.508)
2
.610±.010
(15.5±.254)
3
.030±.010
(.762±.254)
.090±.010
(2.29±.254)
2
SHD-5
.030±.010
(.762±.254)
.610±.010
(15.5±.254)
.320±.010
(8.13 ±.254)
3
.110 (2.80) Max
Alumina Ring
Terminal 1
Copper Terminals
.130 (3.30) Max
Moly Lid
.020±.005 R
(.508±.127 )
Alumina Ring
Moly Base
Terminal 1
.060±.010
(1.52±.254)
.015±.002
(.381±.051)
1
2
3
PINOUT TABLE
DEVICE TYPE
PIN 1
DUAL RECTIFIER, COMMON CATHODE (P)
COMMON CATHODE
Note:
The V
f
curves shown are for the SD125SC200 unpackaged die only.
Typical Forw ard Characteristics
10
1
PIN 2
ANODE
PIN 3
ANODE
Typical Rev erse Characteristics
(mA)
200 °C
10
0
175 °C
150 °C
125 °C
Instantaneous Reverse Current - I
10
1
R
200 °C
175 °C
10
-1
F
(A)
10
-2
100 °C
75 °C
50 °C
25 °C
Instantaneous Forward Current - I
10
0
10
-3
10
-4
125 °C
10
-1
10
-5
0
40
80
120
160
Reverse Voltage - V
R
(V)
200
240
Typical Junction Capacitance
25 °C
(pF)
Junction Capacitance - C
0.0
0.2
0.4
0.6
Forward Voltage Drop - V
0.8
F
(V)
1.0
T
300
240
180
120
60
0
0
40
80
120
160
Reverse Voltage - V
R
(V)
200
240
10
-2
©2018 Sensitron Semiconductor
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
www.sensitron.com
sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4593, REV. B
SHD118246
SHD118246A
SHD118246B
PART ORDERING INFORMATION:
SHD118246 XX X
Part Number
Screening Level (blank is no screening):
Suffix
blank
SX*
SV*
SS*
Screened in Accordance with:
No screening level
MIL-PRF-19500, TX Level
MIL-PRF-19500, TXV Level
MIL-PRF-19500, S Level
QCI (blank is no QCI):
Suffix
blank
Q*
Inspection in Accordance with:
No QCI
MIL-PRF-19500 QCI
*The 200V schottky diodes may be de-rated to 170V. In addition, PDA requirement may be modified to not include delta removals
for reverse leakage current.
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’
fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of
the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at
a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron
Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder
maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When
exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
©2018 Sensitron Semiconductor
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
www.sensitron.com
sales@sensitron.com
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