Surface Mount RF Schottky
Barrier Diodes
Technical Data
HSMS-281x Series
Features
• Surface Mount Packages
• Low Flicker Noise
• Low FIT (Failure in Time)
Rate*
• Six-sigma Quality Level
• Single, Dual and Quad
Versions
• Tape and Reel Options
Available
* For more information see the
Surface Mount Schottky Reliability
Data Sheet.
Package Lead Code Identification, SOT-23/SOT-143
(Top View)
COMMON
COMMON
SINGLE
3
SERIES
3
ANODE
3
CATHODE
3
1
#0
2
1
#2
2
1
#3
2
1
#4
2
UNCONNECTED
PAIR
3
4
RING
QUAD
3
4
BRIDGE
QUAD
3
4
1
#5
2
1
#7
2
1
#8
2
Description/Applications
These Schottky diodes are
specifically designed for both
analog and digital applications.
This series offers a wide range of
specifications and package
configurations to give the
designer wide flexibility. The
HSMS-281x series of diodes
features very low flicker (1/f)
noise.
Note that Agilent’s manufacturing
techniques assure that dice found
in pairs and quads are taken from
adjacent sites on the wafer,
assuring the highest degree of
match.
Package Lead Code
Identification, SOT-323
(Top View)
SINGLE
SERIES
Package Lead Code
Identification, SOT-363
(Top View)
HIGH ISOLATION
UNCONNECTED PAIR
6
5
4
UNCONNECTED
TRIO
6
5
4
B
COMMON
ANODE
C
COMMON
CATHODE
1
2
3
K
1
2
3
L
Pin Connections and
Package Marking
E
F
1
2
3
6
5
4
Notes:
1. Package marking provides
orientation and identification.
2. See “Electrical Specifications” for
appropriate package marking.
GUx
2
Absolute Maximum Ratings
[1]
T
C
= 25°C
Symbol
I
f
P
IV
T
j
T
stg
θ
jc
Parameter
Forward Current (1
µs
Pulse)
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Thermal Resistance
[2]
Unit
Amp
V
°C
°C
°C/W
SOT-23/SOT-143
1
Same as V
BR
150
-65 to 150
500
SOT-323/SOT-363
1
Same as V
BR
150
-65 to 150
150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. T
C
= +25°C, where T
C
is defined to be the temperature at the package pins where contact is made to the circuit board.
ESD WARNING:
Handling Precautions Should Be Taken To Avoid Static Discharge.
Electrical Specifications T
C
= 25
°
C, Single Diode
[4]
Part
Package
Number Marking Lead
HSMS
[5]
Code
Code
2810
2812
2813
2814
2815
2817
2818
281B
281C
281E
281F
281K
281L
B0
[3]
B2
[3]
B3
[3]
B4
[3]
B5
[3]
B7
[3]
B8
[3]
B0
[7]
B2
[7]
B3
[7]
B4
[7]
BK
[7]
BL
[7]
0
2
3
4
5
7
8
B
C
E
F
K
L
Minimum Maximum
Breakdown Forward
Voltage
Voltage
V
BR
(V)
V
F
(mV)
20
400
Maximum
Forward
Voltage
V
F
(V) @
I
F
(mA)
1.0
35
Maximum
Reverse
Typical
Leakage
Maximum
Dynamic
I
R
(nA) @ Capacitance Resistance
V
R
(V)
C
T
(pF)
R
D
(Ω)
[6]
200
15
1.2
15
Configuration
Single
Series
Common Anode
Common Cathode
Unconnected Pair
Ring Quad
[5]
Bridge Quad
[5]
Single
Series
Common Anode
Common Cathode
High Isolation
Unconnected Pair
Unconnected Trio
Test Conditions
I
R
= 10
µA
I
F
= 1 mA
V
F
= 0 V
f = 1 MHz
I
F
= 5 mA
Notes:
1.
∆V
F
for diodes in pairs and quads in 15 mV maximum at 1 mA.
2.
∆C
TO
for diodes in pairs and quads is 0.2 pF maximum.
3. Package marking code is in white.
4. Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.
5. See section titled “Quad Capacitance.”
6. R
D
= R
S
+ 5.2
Ω
at 25°C and I
f
= 5 mA.
7. Package marking code is laser marked.
3
Quad Capacitance
Capacitance of Schottky diode
quads is measured using an
HP4271 LCR meter. This
instrument effectively isolates
individual diode branches from
the others, allowing accurate
capacitance measurement of each
branch or each diode. The
conditions are: 20 mV R.M.S.
voltage at 1 MHz. Agilent defines
this measurement as “CM”, and it
is equivalent to the capacitance of
the diode by itself. The equivalent
diagonal and adjacent
capacitances can then be
calculated by the formulas given
below.
In a quad, the diagonal capaci-
tance is the capacitance between
points A and B as shown in the
figure below. The diagonal
capacitance is calculated using
the following formula
C
1
x C
2
C
3
x C
4
C
DIAGONAL
= _______ + _______
C
1
+ C
2
C
3
+ C
4
A
C
1
C
C
2
C
4
B
C
3
The equivalent adjacent
capacitance is the capacitance
between points A and C in the
figure below. This capacitance is
calculated using the following
formula
1
C
ADJACENT
= C
1
+ ____________
1
1
1
–– + –– + ––
C
2
C
3
C
4
Linear Equivalent Circuit, Diode Chip
R
j
R
S
SPICE Parameters
Parameter Units
B
V
C
J0
E
G
I
BV
I
S
N
R
S
P
B
P
T
M
V
pF
eV
A
A
Ω
V
HSMS-281x
25
1.1
0.69
E-5
4.8E - 9
1.08
10
0.65
2
0.5
C
j
R
S
= series resistance (see Table of SPICE parameters)
C
j
= junction capacitance (see Table of SPICE parameters)
R
j
=
8.33 X 10
-5
nT
I
b
+ I
s
where
I
b
= externally applied bias current in amps
I
s
= saturation current (see table of SPICE parameters)
T = temperature,
°K
n = ideality factor (see table of SPICE parameters)
Note:
To effectively model the packaged HSMS-281x product,
please refer to Application Note AN1124.
4
Typical Performance, T
C
= 25
°
C (unless otherwise noted), Single Diode
100
I
F
– FORWARD CURRENT (mA)
100,000
R
D
– DYNAMIC RESISTANCE (Ω)
1000
10,000
I
R
– REVERSE CURRENT (nA)
10
100
1000
1
100
0.1
0.01
0
T
A
= +125°C
T
A
= +75°C
T
A
= +25°C
T
A
= –25°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V
F
– FORWARD VOLTAGE (V)
10
10
1
0
5
T
A
= +125°C
T
A
= +75°C
T
A
= +25°C
10
15
1
0.1
1
10
100
V
R
– REVERSE VOLTAGE (V)
I
F
– FORWARD CURRENT (mA)
Figure 1. Forward Current vs.
Forward Voltage at Temperatures.
Figure 2. Reverse Current vs.
Reverse Voltage at Temperatures.
Figure 3. Dynamic Resistance vs.
Forward Current.
1.25
I
F
- FORWARD CURRENT (mA)
30
30
1
10
I
F
(Left Scale)
10
0.75
0.50
∆V
F
(Right Scale)
1
1
0.25
0
0
2
4
6
8
10
12
14
16
V
R
– REVERSE VOLTAGE (V)
0.3
0.2
0.4
0.6
0.8
1.0
1.2
0.3
1.4
V
F
- FORWARD VOLTAGE (V)
Figure 4. Total Capacitance vs.
Reverse Voltage.
Figure 5. Typical V
f
Match, Pairs and
Quads.
∆V
F
- FORWARD VOLTAGE DIFFERENCE (mV)
C
T
– CAPACITANCE (pF)
5
Applications Information
Introduction —
Product Selection
Agilent’s family of Schottky
products provides unique solu-
tions to many design problems.
The first step in choosing the right
product is to select the diode type.
All of the products in the
HSMS-282x family use the same
diode chip, and the same is true of
the HSMS-281x and HSMS-280x
families. Each family has a
different set of characteristics
which can be compared most
easily by consulting the SPICE
parameters in Table 1.
A review of these data shows that
the HSMS-280x family has the
highest breakdown voltage, but at
the expense of a high value of
series resistance (R
s
). In applica-
tions which do not require high
voltage the HSMS-282x family,
with a lower value of series
resistance, will offer higher
current carrying capacity and
better performance. The HSMS-
281x family is a hybrid Schottky
(as is the HSMS-280x), offering
lower 1/f or flicker noise than the
HSMS-282x family.
In general, the HSMS-282x family
should be the designer’s first
choice, with the -280x family
reserved for high voltage applica-
tions and the HSMS-281x family
for low flicker noise applications.
0.026
0.07
0.035
0.016
Figure 6. PCB Pad Layout
(dimensions in inches).
Assembly Instructions
SOT-323 PCB Footprint
A recommended PCB pad layout
for the miniature SOT-323 (SC-70)
package is shown in Figure 6
(dimensions are in inches). This
layout provides ample allowance
for package placement by auto-
mated assembly equipment
without adding parasitics that
could impair the performance.
Assembly Instructions
SOT-363 PCB Footprint
A recommended PCB pad layout
for the miniature SOT-363 (SC-70,
6 lead) package is shown in
Figure 7 (dimensions are in
inches). This layout provides
ample allowance for package
placement by automated assembly
equipment without adding
parasitics that could impair the
performance.
0.026
Table 1. Typical SPICE Parameters.
Parameter
B
V
C
J0
E
G
I
BV
I
S
N
R
S
P
B
(V
J
)
P
T
(XTI)
M
Units
V
pF
eV
A
A
Ω
V
HSMS-280x
75
1.6
0.69
1 E-5
3 E-8
1.08
30
0.65
2
0.5
HSMS-281x
25
1.1
0.69
1 E-5
4.8 E-9
1.08
10
0.65
2
0.5
HSMS-282x
15
0.7
0.69
1 E-4
2.2 E-8
1.08
6.0
0.65
2
0.5
0.075
0.035
0.016
Figure 7. PCB Pad Layout
(dimensions in inches).
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
