®
BYT01-400
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
T
j
(max)
V
F
(max)
trr (max)
1A
400 V
150°C
1.4 V
25 ns
FEATURES AND BENEFITS
Very low conduction losses
Negligible switching losses
Low forward & reverse recovery times
s
s
s
DO-15
BYT01-400
DESCRIPTION
The BYT01-400 which is using ST’s 400V planar
technology, is specially suited for switching mode
base drive & transistor circuits.
The device, which is available in axial (DO-15)
package, is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
ABSOLUTE RATINGS
(limiting values)
Symbol
V
RRM
I
F (AV)
I
FSM
T
stg
T
j
Parameter
Repetive peak reverse voltage
Average forward current
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
TI = 80°C
δ
= 0.5
Value
400
1
30
- 65 to +150
150
Unit
V
A
A
°C
°C
tp = 10ms Sinusoidal
October 2001 - Ed: 2A
1/5
BYT01-400
THERMAL PARAMETERS
Symbol
R
th(j-a)
Junction to ambient*
Parameter
Value
45
Unit
°C/W
* On infinite heatsink with 10mm lead length.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
I
R
*
Parameters
Reverse leakage current
Test Conditions
T
j
= 25°C
T
j
= 100°C
V
F
**
Forward voltage drop
T
j
= 25°C
T
j
= 100°C
Pulse test: * tp = 5ms,
δ
< 2%
** tp = 380µs,
δ
< 2%
To evaluate the maximum conduction losses use the following equation:
P = 1.1 x I
F(AV)
+ 0.25 I
F2(RMS)
I
F
= 1A
1.0
V
R
= V
RRM
0.1
Min.
Typ.
Max.
20
0.5
1.5
1.4
Unit
µA
mA
V
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol
trr
Parameter
Reverse recovery
time
T
j
= 25°C
Test Conditions
I
F
= 0.5A I
R
= 1A
I
rr
= 0.25A
I
F
= 1A dI
F
/dt = - 15A/µs
V
R
= 30V
tfr
Forward recovery
time
Forward recovery
voltage
T
j
= 25°C
I
F
= 1A dI
F
/dt = 50A/µs
VFR = 1.1 x V
F
max
I
F
= 1A dI
F
/dt = 50A/µs
60
Min.
Typ.
16
Max.
25
Unit
ns
55
ns
V
FP
T
j
= 25°C
9.5
V
2/5
BYT01-400
Fig. 1:
Average forward power dissipation versus
average forward current.
PF(av)(W)
1.8
1.6
1.4
1.2
1.0
δ
=1
δ
= 0.05
δ
= 0.1
δ
= 0.2
δ
= 0.5
Fig. 2:
Average forward current versus ambient
temperature (δ = 0.5)
IF(av)(A)
1.2
Rth(j-a)=Rth(j-l)
1.0
0.8
0.6
0.8
0.6
0.4
0.2
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
T
Rth(j-a)=100°C/W
0.4
0.2
IF(av)(A)
δ
=tp/T
Tamb(°C)
tp
0.0
0
25
50
75
100
125
150
Fig. 3:
Thermal resistance versus lead length.
Fig. 4:
Relative variation of thermal impedance
junction ambient versus pulse duration (printed
circuit board epoxy FR4, Lleads = 10mm).
Zth(j-a)/Rth(j-a)
1.0
Rth(°C/W)
110
Rth(j-a)
100
90
80
70
60
50
40
30
20
10
0
5
10
15
20
25
0.9
0.8
0.7
0.6
Rth(j-l)
δ
= 0.5
0.5
0.4
0.3
0.2
δ
= 0.2
δ
= 0.1
Single pulse
T
Lleads(mm)
0.1
0.0
tp(s)
1.E+00
1.E+01
δ
=tp/T
1.E+02
tp
1.E-01
1.E+03
Fig. 5:
Forward voltage drop versus forward current.
Fig. 6:
Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
10
9
F=1MHz
Vosc=30mV
Tj=25°C
IFM(A)
100.0
Tj=100°C
(Typical values)
8
7
10.0
Tj=100°C
(Maximum values)
6
5
4
1.0
Tj=25°C
(Maximum values)
3
2
1
0
VFM(V)
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
VR(V)
1
10
100
1000
3/5
BYT01-400
Fig. 7:
Forward recovery time versus dIF/dt (90%
confidence).
tfr(ns)
100
IF=1A
Tj=100°C
Fig. 8.
Transient peak forward voltage versus
dIF/dt (90% confidence).
VFP(V)
15.0
IF=1A
Tj=100°C
80
12.5
10.0
60
7.5
40
5.0
20
2.5
dIF/dt(A/µs)
0
0
10
20
30
40
50
60
70
80
90
100
dIF/dt(A/µs)
0.0
0
10
20
30
40
50
60
70
80
90
100
Fig. 9:
Peak reverse recovery current versus
dIF/dt (90% confidence).
IRM(A)
2.5
IF=1A
VR=200V
Fig. 10:
Dynamic parameters versus junction
temperature.
%
300
IF=1A
dIF/dt=-50A/µs
VR=30V
Qrr
2.0
250
1.5
Tj=100°C
trr
200
IRM
1.0
150
0.5
Tj=25°C
dIF/dt(A/µs)
0.0
1
10
100
Tj(°C)
100
25
50
75
100
125
150
Fig. 11:
Non repetitive surge peak current versus
number of cycles.
IFSM(A)
35
Tj initial=25°C
30
25
20
15
10
5
Number of cycles
0
1
10
100
1000
4/5
BYT01-400
PACKAGE MECHANICAL DATA
DO-15
C
A
C
D
B
DIMENSIONS
REF.
Millimeters
Min.
A
B
C
D
6.05
2.95
26
0.71
Inches
Min.
0.238
0.116
1.024
0.028
Max.
6.75
3.53
31
0.88
Max.
0.266
0.139
1.220
0.035
Ordering code
BYT01-400
BYT01-400RL
s
Marking
BYT01-400
BYT01-400
Package
DO-15
DO-15
Weight
0.4 g
0.4 g
Base qty
1000
6000
Delivery mode
Ammopack
Tape & Reel
s
s
Cooling method: by conduction (method A)
Epoxy meets UL 94,V0
Bending method: Application note AN1471
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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