IRFHM830DPbF
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max
(@ V
GS
= 10V)
Qg
(typical)
Rg
(typical)
(@T
C (Bottom)
= 25°C)
I
D
30
4.3
13
1.1
40
V
m
nC
A
PQFN 3.3 x 3.3 mm
Applications
Synchronous MOSFET for Buck Converters
Features
Low R
DSon
(< 4.3m)
Schottky intrinsic diode with low forward voltage
Low Thermal Resistance to PCB (<3.4°C/W)
100% Rg tested
Low Profile (< 1.0 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Low Switching Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFHM830DTRPbF
IRFHM830DTR2PBF
Absolute Maximum Ratings
Package Type
PQFN 3.3mm x 3.3mm
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Units
V
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
30
± 20
20
16
40
40
160
2.7
37
0.022
-55 to + 150
A
W
W/°C
°C
Notes
through
are on page 9
1
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September 25, 2015
Static @ T
J
= 25°C (unless otherwise specified)
BV
DSS
BV
DSS
/T
J
R
DS(on)
V
GS(th)
V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
69
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
IRFHM830DPbF
Typ.
–––
0.02
3.4
5.7
1.8
-6.0
–––
–––
–––
–––
–––
27
13
2.9
1.8
4.5
3.8
6.3
10
1.1
9.8
20
9.1
6.7
1797
363
148
Typ.
–––
–––
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
16
17
Max.
40
A
160
0.85
24
26
Parameter
Typ.
–––
–––
–––
–––
V
ns
nC
Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 20A, V
GS
= 0V
D
G
S
Max.
–––
–––
4.3
7.1
2.35
–––
500
5.0
100
-100
–––
–––
20
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
Conditions
V
V
GS
= 0V, I
D
= 1mA
V/°C Reference to 25°C, I
D
= 4mA
V
GS
= 10V, I
D
= 20A
m
V
GS
= 4.5V, I
D
= 20A
V
V
DS
= V
GS
, I
D
= 50µA
mV/°C V
DS
= V
GS
, I
D
= 1mA
µA V
DS
= 24V, V
GS
= 0V
mA V
DS
= 24V,V
GS
= 0V,T
J
= 125°C
V
GS
= 20V
nA
V
GS
= -20V
S
V
DS
= 15V, I
D
= 20A
V
GS
= 10V, V
DS
= 15V, I
D
= 20A
V
DS
= 15V
nC
V
GS
= 4.5V
I
D
= 20A
See Fig.17 & 18
nC
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 20A
ns
R
G
= 1.8
See Fig.15
V
GS
= 0V
pF
V
DS
= 25V
ƒ = 1.0MHz
Max.
82
20
Units
mJ
A
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
Diode Forward Voltage
V
SD
t
rr
Q
rr
Reverse Recovery Time
Reverse Recovery Charge
T
J
= 25°C, I
F
= 20A, V
DD
= 15V
di/dt = 300A/µs
Max.
3.4
37
46
31
Units
Thermal Resistance
R
JC
(Bottom)
R
JC
(Top)
R
JA
R
JA
(<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
°C/W
2
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September 25, 2015
1000
TOP
VGS
10V
8.0V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
IRFHM830DPbF
1000
TOP
VGS
10V
8.0V
4.5V
3.8V
3.5V
3.3V
3.0V
2.8V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
2.8V
10
2.8V
60µs
PULSE WIDTH
1
0.1
1
Tj = 25°C
1
10
100
0.1
1
60µs
PULSE WIDTH
Tj = 150°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
1.8
ID = 20A
1.6
1.4
1.2
1.0
0.8
0.6
VGS = 10V
ID, Drain-to-Source Current(A)
100
TJ = 150°C
10
TJ = 25°C
1
VDS = 15V
0.1
1.5
2
2.5
3
3.5
4
4.5
60µs
PULSE WIDTH
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
14
ID= 20A
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
10000
C, Capacitance (pF)
VDS = 24V
VDS = 15V
VDS= 6V
Ciss
1000
Coss
Crss
100
10
1
10
VDS , Drain-to-Source Voltage (V)
100
0
10
20
30
40
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
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Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
September 25, 2015
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1000
1000
IRFHM830DPbF
OPERATION IN THIS AREA
LIMITED BY RDS(on)
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
100
TJ = 150°C
100
100µsec
10
1msec
10msec
10
TJ = 25°C
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.10
1
10
100
VGS = 0V
1.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
75
VGS(th), Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
3.0
Limited By Package
2.5
ID, Drain Current (A)
50
2.0
1.5
25
1.0
ID = 1.0A
ID = 10mA
ID = 5.0mA
ID = 2.0mA
ID = 1.0mA
0
25
50
75
100
125
150
TC , Case Temperature (°C)
0.5
-75 -50 -25
0
25
50
75 100 125 150
TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
10
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage Vs. Temperature
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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September 25, 2015
)
RDS(on), Drain-to -Source On Resistance (m
IRFHM830DPbF
16
350
EAS , Single Pulse Avalanche Energy (mJ)
14
12
10
8
6
4
2
0
2
4
6
8
10
12
14
ID = 20A
300
250
200
150
100
50
0
25
50
75
ID
TOP
5.8A
11A
BOTTOM 20A
TJ = 125°C
TJ = 25°C
16
18
20
100
125
150
VGS, Gate -to -Source Voltage (V)
Starting TJ , Junction Temperature (°C)
Fig 12.
On– Resistance vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy vs. Drain Current
V
(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
D.U.T
IAS
tp
+
V
- DD
A
0.01
I
AS
Fig 14a.
Unclamped Inductive Test Circuit
Fig 14b.
Unclamped Inductive Waveforms
Fig 15a.
Switching Time Test Circuit
5
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© 2015 International Rectifier
Fig 15b.
Switching Time Waveforms
Submit Datasheet Feedback
September 25, 2015
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