MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF141/D
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode MOSFET
Designed for broadband commercial and military applications at frequencies
to 175 MHz. The high power, high gain and broadband performance of this
device makes possible solid state transmitters for FM broadcast or TV channel
frequency bands.
•
Guaranteed Performance at 30 MHz, 28 V:
Output Power — 150 W
Gain — 18 dB (22 dB Typ)
Efficiency — 40%
•
Typical Performance at 175 MHz, 50 V:
Output Power — 150 W
Gain — 13 dB
•
Low Thermal Resistance
•
Ruggedness Tested at Rated Output Power
•
Nitride Passivated Die for Enhanced Reliability
D
MRF141
150 W, 28 V, 175 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFET
G
S
CASE 211–11, STYLE 2
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VDGO
VGS
ID
PD
Tstg
TJ
Value
65
65
±
40
16
300
1.71
– 65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.6
Unit
°C/W
NOTE —
CAUTION
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 8
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF141
1
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(1)
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA)
Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0)
Gate–Body Leakage Current (VGS = 20 V, VDS = 0)
V(BR)DSS
IDSS
IGSS
65
—
—
—
—
—
—
5.0
1.0
Vdc
mAdc
µAdc
ON CHARACTERISTICS
(1)
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
Drain–Source On–Voltage (VGS = 10 V, ID = 10 A)
Forward Transconductance (VDS = 10 V, ID = 5.0 A)
VGS(th)
VDS(on)
gfs
1.0
0.1
5.0
3.0
0.9
7.0
5.0
1.5
—
Vdc
Vdc
mhos
DYNAMIC CHARACTERISTICS
(1)
Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Ciss
Coss
Crss
—
—
—
350
420
35
—
—
—
pF
pF
pF
FUNCTIONAL TESTS
Common Source Amplifier Power Gain, f = 30; 30.001 MHz
(VDD = 28 V, Pout = 150 W (PEP), IDQ = 250 mA) f = 175 MHz
Drain Efficiency
(VDD = 28 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,
IDQ = 250 mA, ID (Max) = 5.95 A)
Intermodulation Distortion (1)
(VDD = 28 V, Pout = 150 W (PEP), f = 30 MHz,
f2 = 30.001 MHz, IDQ = 250 mA)
Load Mismatch
(VDD = 28 V, Pout = 150 W (PEP), f1 = 30; 30.001 MHz,
IDQ = 250 mA, VSWR 30:1 at all Phase Angles)
Gps
η
16
—
40
20
10
45
—
—
—
dB
%
dB
IMD(d3)
IMD(d11)
ψ
—
—
– 30
– 60
– 28
—
No Degradation in Output Power
CLASS A PERFORMANCE
Intermodulation Distortion (1) and Power Gain
GPS
—
(VDD = 28 V, Pout = 50 W (PEP), f1 = 30 MHz,
IMD(d3)
—
f2 = 30.001 MHz, IDQ = 4.0 A)
IMD(d9 – 13)
—
NOTE:
1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
23
– 50
– 75
—
—
—
dB
BIAS +
0 – 12 V
–
L1
C11
R4
C5
R1
C2
C3
R2
C12
C6
C4
C7
T2
C8
L2
C9
+
–
C10
+
28 V
–
RF
OUTPUT
D.U.T.
RF INPUT
R3
T1
C2, C5, C6, C7, C8, C9 — 0.1
µF
Ceramic Chip or
Monolythic with Short Leads
C3 — Arco 469
C4 — 820 pF Unencapsulated Mica or Dipped Mica
with Short Leads
C10 — 10
µF/100
V Electrolytic
C11 — 1
µF,
50 V, Tantalum
C12 — 330 pF, Dipped Mica (Short leads)
L1 — VK200/4B Ferrite Choke or Equivalent, 3.0
µH
L2 — Ferrite Bead(s), 2.0
µH
R1, R2 — 51
Ω/1.0
W Carbon
R3 — 1.0
Ω/1.0
W Carbon or Parallel Two 2
Ω,
1/2 W Resistors
R4 — 1 kΩ/1/2 W Carbon
T1 — 16:1 Broadband Transformer
T2 — 1:25 Broadband Transformer
Board Material — 0.062″ Fiberglass (G10),
1 oz. Copper Clad, 2 Sides,
e
r = 5
Figure 1. 30 MHz Test Circuit (Class AB)
MRF141
2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
100
I D, DRAIN CURRENT (AMPS)
1.04
1.03
1.02
1.01
1
0.99
0.98
0.97
0.96
0.95
0.94
0.93
0.92
0.91
0.9
– 25
ID = 5 A
4A
2A
1A
0.5 A
0.25 A
0
25
50
TC, CASE TEMPERATURE (°C)
75
100
10
TC = 25°C
1
1
10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
100
Figure 2. DC Safe Operating Area
Figure 3. Gate–Source Voltage versus
Case Temperature
2000
f T, UNITY GAIN FREQUENCY (MHz)
VDS = 20 V
C, CAPACITANCE (pF)
10 V
200
0
Coss
Ciss
200
1000
Crss
0
0
2
4
6
8
10
12
14
ID, DRAIN CURRENT (AMPS)
16
18
20
20
0
5
10
15
20
25
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 4. Common Source Unity Gain Frequency
versus Drain Current
Figure 5. Capacitance versus
Drain–Source Voltage
30
Pout , OUTPUT POWER (WATTS)
300
200
100
00
300
200
100
f = 30 MHz
VDD = 28 V
IDQ = 250 mA
0
1
2
3
4
5
Pin, INPUT POWER (WATTS)
5
10
15
f = 175 MHz
VDD = 28 V
IDQ = 250 mA
20
25
25
GPS , POWER GAIN (dB)
20
VDD = 28 V
IDQ = 250 mA
Pout = 150 W
15
10
5
2
10
f, FREQUENCY (MHz)
100
200
0
Figure 6. Power Gain versus Frequency
Figure 7. Output Power versus Input Power
MOTOROLA RF DEVICE DATA
MRF141
3
TYPICAL CHARACTERISTICS
320
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
280
f = 30 MHz
IDQ = 250 mA
320
280
240
200
160
120
80
40
14
16
18
20
22
24
26
28
0
12
14
16
18
20
22
24
26
28
Pin = 20 W
14 W
8W
f = 175 MHz
IDQ = 250 mA
240
200
Pin = 4 W
2W
1W
160
120
80
40
0
12
SUPPLY VOLTAGE (VOLTS)
SUPPLY VOLTAGE (VOLTS)
Figure 8. Output Power versus Supply Voltage
Figure 9. Output Power versus Supply Voltage
IMD, INTERMODULATION DISTORTION (dB)
25
d3
35
45
IDQ = 250 mA
55
VDD = 28, f = 30 MHz, TONE SEPARATION = 1 kHz
25
35
45
55
0
20
40
60
d3
d5
d5
80
100
120
140
IDQ = 500 mA
160
180
200
Pout, OUTPUT POWER (WATTS)
Figure 10. IMD versus Pout (PEP)
MRF141
4
MOTOROLA RF DEVICE DATA
Zo = 10
Ω
VDD = 28 V
IDQ = 250 mA
Pout = 150 W PEP
ZOL* = Conjugate of the optimum load impedance
ZOL* =
into which the device output operates at a
ZOL* =
given output power, voltage and frequency.
15
7.5
4
2
2
Zin
30
100
150
30
100
f = 175 MHz
ZOL* f = 175 MHz
Figure 11. Input and Output Impedances
RFC1
+ 28 V
+
BIAS
0 – 12 V
R1
+
C4
C5
R3
C1
RF INPUT
R2
C6
C7
C8
L1
DUT
L3
L2
C9
RF
OUTPUT
L4
C10
–
C11
C2
C3
C1, C2, C8 — Arco 463 or equivalent
C3 — 25 pF, Unelco
C4 — 0.1
µF,
Ceramic
C5 — 1.0
µF,
15 WV Tantalum
C6 — 25 pF, Unelco J101
C7 — 25 pF, Unelco J101
C9 — Arco 262 or equivalent
C10 — 0.05
µF,
Ceramic
C11 — 15
µF,
35 WV Electrolytic
L1 — 3/4″, #18 AWG into Hairpin
L2 — Printed Line, 0.200″ x 0.500″
L3 — 7/8″, #16 AWG into Hairpin
L4 — 2 Turns, #16 AWG, 5/16 ID
RFC1 — 5.6
µH,
Molded Choke
RFC2 — VK200–4B
R1 — 150
Ω,
1.0 W Carbon
R2 — 10 kΩ, 1/2 W Carbon
R3 — 120
Ω,
1/2 W Carbon
Figure 12. 175 MHz Test Circuit (Class AB)
MOTOROLA RF DEVICE DATA
MRF141
5
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