MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF150/D
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode
Designed primarily for linear large–signal output stages up to 150 MHz
frequency range.
•
Specified 50 Volts, 30 MHz Characteristics
Output Power = 150 Watts
Power Gain = 17 dB (Typ)
Efficiency = 45% (Typ)
•
Superior High Order IMD
•
IMD(d3) (150 W PEP) — – 32 dB (Typ)
•
IMD(d11) (150 W PEP) — – 60 dB (Typ)
•
100% Tested For Load Mismatch At All Phase Angles With
30:1 VSWR
MRF150
150 W, to 150 MHz
N–CHANNEL MOS
LINEAR RF POWER
FET
D
G
S
CASE 211–11, STYLE 2
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VDGO
VGS
ID
PD
Tstg
TJ
Value
125
125
±
40
16
300
1.71
– 65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.6
Unit
°C/W
Handling and Packaging
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 8
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF150
1
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA)
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0)
Gate–Body Leakage Current (VGS = 20 V, VDS = 0)
V(BR)DSS
IDSS
IGSS
125
—
—
—
—
—
—
5.0
1.0
Vdc
mAdc
µAdc
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
Drain–Source On–Voltage (VGS = 10 V, ID = 10 A)
Forward Transconductance (VDS = 10 V, ID = 5.0 A)
VGS(th)
VDS(on)
gfs
1.0
1.0
4.0
3.0
3.0
7.0
5.0
5.0
—
Vdc
Vdc
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Ciss
Coss
Crss
—
—
—
400
240
40
—
—
—
pF
pF
pF
FUNCTIONAL TESTS (SSB)
Common Source Amplifier Power Gain
(VDD = 50 V, Pout = 150 W (PEP), IDQ = 250 mA)
f = 30 MHz
f = 150 MHz
Gps
η
—
—
—
17
8.0
45
—
—
—
dB
%
Drain Efficiency
(VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,
ID (Max) = 3.75 A)
Intermodulation Distortion (1)
(VDD = 50 V, Pout = 150 W (PEP),
f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 250 mA)
Load Mismatch
(VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,
IDQ = 250 mA, VSWR 30:1 at all Phase Angles)
dB
IMD(d3)
IMD(d11)
ψ
No Degradation in Output Power
—
—
– 32
– 60
—
—
CLASS A PERFORMANCE
Intermodulation Distortion (1) and Power Gain
(VDD = 50 V, Pout = 50 W (PEP), f1 = 30 MHz,
f2 = 30.001 MHz, IDQ = 3.0 A)
GPS
IMD(d3)
IMD(d9 – 13)
—
—
—
20
– 50
– 75
—
—
—
dB
NOTE:
1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
L1
BIAS +
0 – 12 V –
C5
R1
DUT
T2
RF
INPUT
T1
R3
C1
R2
C2
C4
C3
RF
OUTPUT
C6
C7
C8
L2
+
C9
+
C10
–
–
50 V
C1 — 470 pF Dipped Mica
C2, C5, C6, C7, C8, C9 — 0.1
µF
Ceramic Chip or
Monolythic with Short Leads
C3 — 200 pF Unencapsulated Mica or Dipped Mica
with Short Leads
C4 — 15 pF Unencapsulated Mica or Dipped Mica
with Short Leads
C10 — 10
µF/100
V Electrolytic
L1 — VK200/4B Ferrite Choke or Equivalent, 3.0
µH
L2 — Ferrite Bead(s), 2.0
µH
R1, R2 — 51
Ω/1.0
W Carbon
R3 — 3.3
Ω/1.0
W Carbon (or 2.0 x 6.8
Ω/1/2
W in Parallel
T1 — 9:1 Broadband Transformer
T2 — 1:9 Broadband Transformer
Figure 1. 30 MHz Test Circuit (Class AB)
MRF150
2
MOTOROLA RF DEVICE DATA
25
Pout , OUTPUT POWER (WATTS)
20
POWER GAIN (dB)
VDD = 50 V
40 V
10
20
IDQ = 250 mA
100
50
00
250
200
150
100
50
0
40
V
0
1
2
3
4
Pin, INPUT POWER (WATTS)
IDQ = 250 mA
5
6
15
10
VDD = 50 V
IDQ = 250 mA
Pout = 150 W (PEP)
30
5
VDD = 50 V
0
2
5
10
20
50
100
200
f, FREQUENCY (MHz)
Figure 2. Power Gain versus Frequency
Figure 3. Output Power versus Input Power
IMD, INTERMODULATION DISTORTION (dB)
– 30
– 35
– 40
– 45
– 50
150 MHz
d3
d5
VDD = 50 V, IDQ = 250 mA, TONE SEPARATION = 1 kHz
– 30
– 35
– 40
– 45
– 50
0
20
40
60
80
30 MHz
d3
d5
100
120
140
160
Pout, OUTPUT POWER (WATTS PEP)
1000
f T, UNITY GAIN FREQUENCY (MHz)
VDS = 30 V
15 V
800
600
400
200
0
0
5
10
ID, DRAIN CURRENT (AMPS)
15
20
Figure 4. IMD versus Pout
Figure 5. Common Source Unity Gain Frequency
versus Drain Current
10
IDS , DRAIN CURRENT (AMPS)
8
6
4
2
VDS = 10 V
gfs = 5 mhos
0
2
4
6
8
10
0
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 6. Gate Voltage versus
Drain Current
MOTOROLA RF DEVICE DATA
MRF150
3
30 MHz
150 MHz
250
200
150
150
90
136
f = 175 MHz
30
Zin
15
30
15
7.5
7.5
4.0 ZOL*
2.0
Zo = 10
Ω
VDD = 50 V
IDQ = 250 mA
Pout = 150 W PEP
ZOL* = Conjugate of the optimum load impedance
ZOL* =
into which the device output operates at a
ZOL* =
given output power, voltage and frequency.
90
f = 175 MHz
4.0
2.0
NOTE: Gate Shunted by 25 Ohms.
Figure 7. Series Equivalent Impedance
RFC2
+ 50 Vdc
R1
C4
C1
RF INPUT
C2
C3
R2
+
C5
R3
L1
C6
DUT
L3
L2
C7
C8
L4
C10
+
C11
BIAS
0 – 12 V
C9
RF OUTPUT
C1, C2, C8 — Arco 463 or equivalent
C3 — 25 pF, Unelco
C4 — 0.1
µF,
Ceramic
C5 — 1.0
µF,
15 WV Tantalum
C6 — 25 pF, Unelco J101
C7 — 25 pF, Unelco J101
C9 — Arco 262 or equivalent
C10 — 0.05
µF,
Ceramic
C11 — 15
µF,
60 WV Electrolytic
L1 — 3/4″, 18 AWG into Hairpin
L2 — Printed Line, 0.200″ x 0.500″
L3 — 1″, #16 AWG into Hairpin
L4 — 2 Turns #16 AWG, 5/16 ID
RFC1 — 5.6
µH,
Choke
RFC2 — VK200–4B
R1 — 150
Ω,
1.0 W Carbon
R2 — 10 kΩ, 1/2 W Carbon
R3 — 120
Ω,
1/2 W Carbon
Figure 8. 150 MHz Test Circuit (Class AB)
MRF150
4
MOTOROLA RF DEVICE DATA
RF POWER MOSFET CONSIDERATIONS
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between the terminals. The metal oxide gate structure
determines the capacitors from gate–to–drain (Cgd), and
gate–to–source (Cgs). The PN junction formed during the
fabrication of the RF MOSFET results in a junction capaci-
tance from drain–to–source (Cds).
These capacitances are characterized as input (Ciss),
output (Coss) and reverse transfer (Crss) capacitances on data
sheets. The relationships between the inter–terminal capaci-
tances and those given on data sheets are shown below. The
Ciss can be specified in two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and zero
volts at the gate. In the latter case the numbers are lower.
However, neither method represents the actual operat-
ing conditions in RF applications.
Since this test is performed at a fast sweep speed, heating of
the device does not occur. Thus, in normal use, the higher
temperatures may degrade these characteristics to some
extent.
DRAIN CHARACTERISTICS
One figure of merit for a FET is its static resistance in the
full–on condition. This on–resistance, VDS(on), occurs in the
linear region of the output characteristic and is specified under
specific test conditions for gate–source voltage and drain
current. For MOSFETs, VDS(on) has a positive temperature
coefficient and constitutes an important design consideration
at high temperatures, because it contributes to the power
dissipation within the device.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide. The
input resistance is very high — on the order of 109 ohms —
resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage
slightly in excess of the gate–to–source threshold voltage,
VGS(th).
Gate Voltage Rating
— Never exceed the gate voltage
rating. Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.
Gate Termination
— The gates of these devices are
essentially capacitors. Circuits that leave the gate open–cir-
cuited or floating should be avoided. These conditions can
result in turn–on of the devices due to voltage build–up on the
input capacitor due to leakage currents or pickup.
Gate Protection
— These devices do not have an internal
monolithic zener diode from gate–to–source. If gate protection
is required, an external zener diode is recommended.
DRAIN
Cgd
GATE
Cds
Cgs
Ciss = Cgd + Cgs
Coss = Cgd + Cds
Crss = Cgd
SOURCE
LINEARITY AND GAIN CHARACTERISTICS
In addition to the typical IMD and power gain data
presented, Figure 5 may give the designer additional informa-
tion on the capabilities of this device. The graph represents the
small signal unity current gain frequency at a given drain
current level. This is equivalent to fT for bipolar transistors.
EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY
Collector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V(BR)CES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ICES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VBE(on) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCE(sat) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Cib . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Cob . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
hfe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RCE(sat) =
Drain
Source
Gate
V(BR)DSS
VDGO
ID
IDSS
IGSS
VGS(th)
VDS(on)
Ciss
Coss
gfs
VDS(on)
VCE(sat) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
rDS(on) =
ID
IC
MOTOROLA RF DEVICE DATA
MRF150
5
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