MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF1507/D
The RF MOSFET Line
RF Power Field Effect Transistor
The MRF1507 is designed for broadband commercial and industrial
applications at frequencies to 520 MHz. The high gain and broadband
performance of this device makes it ideal for large–signal, common source
amplifier applications in 7.5 volt portable FM equipment.
•
Specified Performance @ 520 MHz, 7.5 Volts
Output Power — 8 Watts
Power Gain — 10 dB
Efficiency — 65%
•
Characterized with Series Equivalent Large–Signal
D
Impedance Parameters
•
Excellent Thermal Stability
•
Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
520 MHz, 2 dB Overdrive
•
Broadband UHF/VHF Demonstration Amplifier
Information Available Upon Request
G
•
RF Power Plastic Surface Mount Package
•
Available in Tape and Reel by Adding T1 Suffix to
Part Number. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
S
N–Channel Enhancement–Mode Lateral MOSFETs
MRF1507
MRF1507T1
8 W, 520 MHz, 7.5 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466–02, STYLE 1
(PLD 1.5)
MAXIMUM RATINGS
Rating
Drain–Source Voltage (1)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VGS
ID
PD
Tstg
Tj
Value
25
±
20
4
62.5
0.50
– 65 to +150
150
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1) Not designed for 12.5 volt applications.
Symbol
R
θJC
Max
2
Unit
°C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA RF
©
Motorola, Inc. 1998
DEVICE DATA
MRF1507 MRF1507T1
1
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0)
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0)
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100
µAdc)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 2 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Output Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
Reverse Transfer Capacitance
(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)
FUNCTIONAL TESTS
(In Motorola Test Fixture)
Common–Source Amplifier Power Gain
(VDD = 7.5 Vdc, Pin = 29 dBm, IDQ = 150 mA, f = 520 MHz)
Drain Efficiency
(VDD = 7.5 Vdc, Pin = 29 dBm, IDQ = 150 mA, f = 520 MHz)
Pout
(VDD = 7.5 Vdc, Pin = 29 dBm, IDQ = 150 mA, f = 520 MHz)
Gps
η
Pout
10
50
8
11
65
9.9
—
—
—
dB
%
W
Ciss
Coss
Crss
—
—
—
48
40.5
5.2
—
—
—
pF
pF
pF
VGS(th)
VDS(on)
gfs
2.5
0.3
1.30
3.4
0.44
1.80
—
—
—
Vdc
Vdc
S
IDSS
IGSS
—
—
—
—
1
1
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
MRF1507 MRF1507T1
2
MOTOROLA RF DEVICE DATA
VGG
C1
R2
+
C2
R1
R3
C3
C6
B1
+
VDD
C4
C5
L1
N2
RF
OUTPUT
Z7
N1
RF
INPUT
Z1
Z2
C8
C7
C9
Z3
Z4
R4
Z5
Z6
DUT
Z8
Z9
Z10
C14
Z11
C12
C10
C11
C13
B1
C1, C5
C2, C4
C3, C6, C8, C14
C7, C9, C13
C10
C11
C12
L1
N1, N2
R1
R2
R3
Fair Rite Products Long Ferrite Bead
0.1
µF,
100 mil Chip Capacitor
10
µF,
50 V Electrolytic Capacitor
130 pF, 100 mil Chip Capacitor
0.3–20 pF Trimmer Capacitor
82 pF, 100 mil Chip Capacitor
39 pF, 100 mil Chip Capacitor
32 pF, 100 mil Chip Capacitor
4 Turns, #20 AWG Enamel, 0.1″ ID
Type N Connectors
1.1 MΩ, 1/4 W Carbon
2 kΩ, 1/2 W Carbon
100
Ω,
1/4 W Carbon
R4
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Board
20
Ω,
1/4 W Carbon
0.459″ x 0.083″ Microstrip
0.135″ x 0.083″ Microstrip
1.104″ x 0.083″ Microstrip
0.114″ x 0.083″ Microstrip
0.154″ x 0.083″ Microstrip
0.259″ x 0.213″ Microstrip
0.217″ x 0.213″ Microstrip
0.175″ x 0.083″ Microstrip
0.747″ x 0.083″ Microstrip
0.608″ x 0.083″ Microstrip
0.594″ x 0.083″ Microstrip
Glass Teflon, 31 mils
Figure 1. 500 – 520 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS
11
10
Pout , OUTPUT POWER (WATTS)
9
8
7
6
5
4
3
2
1
0.10
0.30
0.71
1.10
0.50
0.90
Pin, INPUT POWER (WATTS)
VDD = 7.5 V
IDQ = 200 mA
1.31
1.51
400 MHz
470 MHz
440 MHz
Pout , OUTPUT POWER (WATTS)
12
11
10
9
8
7
6
5
4
6
7
8
VDD, SUPPLY VOLTAGE (V)
9
Pin = 300 mW
10
500 mW
IDQ = 200 mA
700 mW
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus
Supply Voltage @ 400 MHz
MOTOROLA RF DEVICE DATA
MRF1507 MRF1507T1
3
TYPICAL CHARACTERISTICS
13
12
Pout , OUTPUT POWER (WATTS)
11
10
9
8
7
6
5
4
6
7
8
VDD, SUPPLY VOLTAGE (V)
9
10
Pin = 300 mW
500 mW
Pout , OUTPUT POWER (WATTS)
IDQ = 200 mA
700 mW
13
12
11
10
500 mW
9
8
7
6
5
4
6
7
8
VDD, SUPPLY VOLTAGE (V)
9
10
Pin = 300 mW
IDQ = 200 mA
700 mW
Figure 4. Output Power versus
Supply Voltage @ 470 MHz
Figure 5. Output Power versus
Supply Voltage @ 440 MHz
9
Pout , OUTPUT POWER (WATTS)
8.5
8
f = 440 MHz
7.5
f = 400 MHz
7
6.5
6
VCC = 7.5 V
Pin = 0.6 W
f = 470 MHz
20
80
16
GAIN (dB), P (WATTS)
out
DRAIN EFFICIENCY
70
DRAIN EFFICIENCY (%)
DRAIN EFFICIENCY (%)
12
GAIN
8
Pout
4
f = 520 MHz
IDQ = 150 mA
Pin = 0.7 W
9
60
50
40
0
0
50
100
150 200 250 300 350
IDQ, GATE CURRENT (mA)
400
450
500
4
5
7
8
VDD, DRAIN VOLTAGE (V)
6
30
10
Figure 6. Output Power versus Gate Current
Figure 7. Gain, Pout, Efficiency
versus Drain Voltage
12
Gp (dB),Pout , OUTPUT POWER (WATTS)
GAIN
15
70
GAIN
GAIN (dB), P (WATTS)
out
10
DRAIN EFFICIENCY
60
10
Pout
50
5
f = 520 MHz
VDD = 7.5 V
IDQ = 150 mA
Pout
Pout
40
f = 520 MHz
VDD = 7.5 V
Pin = 0.7 W
8
0
0.1
0.2
0.3
0.4
0.5
IDQ (A)
0.6
0.7
0.8
0.9
1.0
0
15
30
17
19
21
23
25
27
20
29
INPUT POWER (dBm)
Figure 8. Pout versus IDQ
Figure 9. Pout, Gain, Drain Efficiency versus Pin
MRF1507 MRF1507T1
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
12
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
10
8
6
4
2
0
Pin = 250 mW
f = 500 MHz
VDD = 7.5 V
700 mW
500 mW
12
10
8
6
4
2
0
0
f = 500 MHz
VDD = 7.5 V
100
200
300
400 500 600
IDQ, (mA)
700
800
900 1000
Pin = 250 mW
700 mW
500 mW
4
5
7
8
VDS, DRAIN VOLTAGE (V)
6
9
10
Figure 10. Pout versus Drain Voltage
Figure 11. Pout versus IDQ
12
Pout , OUTPUT POWER (WATTS)
10
8
6
4
2
0
Pin = 250 mW
700 mW
500 mW
Pout , OUTPUT POWER (WATTS)
f = 520 MHz
VDD = 7.5 V
12
10
8
6
4
2
0
4
5
7
8
VDS, DRAIN VOLTAGE (V)
6
9
10
0
100
200
300
400 500 600
IDQ, (mA)
700
800
900 1000
f = 520 MHz
VDD = 7.5 V
700 mW
500 mW
Pin = 250 mW
Figure 12. Pout versus Drain Voltage
Figure 13. Pout versus IDQ
12
VDD = 9 V
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
11
10
9
8
7
6
5
20
21
22
Pin, (dBm)
23
f = 135 MHz
IDQ = 800 mA
24
25
VDD = 7.5 V
17
15
13
VDD = 7.5 V
11
9
7
5
f = 155 MHz
IDQ = 800 mA
20
21
22
Pin, (dBm)
23
24
25
VDD = 9 V
Figure 14. Pout versus Pin
Figure 15. Pout versus Pin
MOTOROLA RF DEVICE DATA
MRF1507 MRF1507T1
5
电子竞赛
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
