MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF174/D
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode
•
Guaranteed Performance at 150 MHz, 28 Vdc
Output Power = 125 Watts
Minimum Gain = 9.0 dB
Efficiency = 50% (Min)
•
Excellent Thermal Stability, Ideally Suited For Class A
Operation
•
Facilitates Manual Gain Control, ALC and Modulation
Techniques
•
100% Tested For Load Mismatch At All Phase Angles
With 30:1 VSWR
•
Low Noise Figure — 3.0 dB Typ at 2.0 A, 150 MHz
D
MRF174
125 W, to 200 MHz
N–CHANNEL MOS
BROADBAND RF POWER
FET
. . . designed primarily for wideband large–signal output and driver stages up to
200 MHz frequency range.
G
S
CASE 211–11, STYLE 2
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
(RGS = 1.0 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Value
65
65
±
40
13
270
1.54
– 65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.65
Unit
°C/W
Handling and Packaging
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 7
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF174
1
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 50 mA)
Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0)
Gate–Source Leakage Current (VGS = 20 V, VDS = 0)
V(BR)DSS
IDSS
IGSS
65
—
—
—
—
—
—
10
1.0
Vdc
mAdc
µAdc
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
Forward Transconductance (VDS = 10 V, ID = 3.0 A)
VGS(th)
gfs
1.0
1.75
3.0
2.5
6.0
—
Vdc
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Ciss
Coss
Crss
—
—
—
175
190
40
—
—
—
pF
pF
pF
FUNCTIONAL CHARACTERISTICS
(Figure 1)
Noise Figure
(VDD = 28 Vdc, ID = 2.0 A, f = 150 MHz)
Common Source Power Gain
(VDD = 28 Vdc, Pout = 125 W, f = 150 MHz, IDQ = 100 mA)
Drain Efficiency
(VDD = 28 Vdc, Pout = 125 W, f = 150 MHz, IDQ = 100 mA)
Electrical Ruggedness
(VDD = 28 Vdc, Pout = 125 W, f = 150 MHz, IDQ = 100 mA,
VSWR 30:1 at all Phase Angles)
NF
Gps
η
ψ
No Degradation in Output Power
—
9.0
50
3.0
11.8
60
—
—
—
dB
dB
%
L4
R2
BIAS
ADJUST
R3
C9
+
–
C10 D1
C12
R1
C11
C14
C13
+
VDD = 28 V
–
RFC1
R4
RF INPUT
C
3
C8
L1
C4
L2
C5
DUT
L3
C6
C7
RF OUTPUT
C1
C2
C1 — 15 pF Unelco
C2 — Arco 462, 5.0 – 80 pF
C3 — 100 pF Unelco
C4 — 25 pF Unelco
C6 — 40 pF Unelco
C7 — Arco 461, 2.7 – 30 pF
C5, C8 — Arco 463, 9.0 – 180 pF
C9, C11, C14 — 0.1
µF
Erie Redcap
C10 — 50
µF,
50 V
C12, C13 — 680 pF Feedthru
D1 — 1N5925A Motorola Zener
L1 — #16 AWG, 1–1/4 Turns, 0.213″ ID
L2 — #16 AWG, Hairpin
L3 — #14 AWG, Hairpin
0.25″
0.062″
0.47″
0.2″
L4 — 10 Turns #16 AWG Enameled Wire on R1
RFC1 — 18 Turns #16 AWG Enameled Wire, 0.3″ ID
R1 — 10
Ω,
2.0 W
R2 — 1.8 kΩ, 1/2 W
R3 — 10 kΩ, 10 Turn Bourns
R4 — 10 kΩ, 1/4 W
Figure 1. 150 MHz Test Circuit
MRF174
2
MOTOROLA RF DEVICE DATA
140
f = 100 MHz
Pout , OUTPUT POWER (WATTS)
120
200 MHz
100
80
60
40
20
0
0
2
4
6
8
10
12
14
VDD = 28 V
IDQ = 100 mA
150 MHz
Pout , OUTPUT POWER (WATTS)
80
f = 100 MHz
70
60
50
40
30
20
10
0
0
2
4
6
8
10
12
14
16
VDD = 13.5 V
IDQ = 100 mA
200 MHz
150 MHz
Pin, INPUT POWER (WATTS)
Pin, INPUT POWER (WATTS)
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Input Power
160
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
140
120
100
80
60
40
20
0
12
14
16
18
20
22
24
26
28
VDD, SUPPLY VOLTAGE (VOLTS)
2W
4W
IDQ = 100 mA
f = 100 MHz
Pin = 6 W
160
140
120
100
80
60
40
20
0
12
14
16
18
20
22
24
26
28
VDD, SUPPLY VOLTAGE (VOLTS)
4W
IDQ = 100 mA
f = 150 MHz
Pin = 12 W
8W
Figure 4. Output Power versus Supply Voltage
Figure 5. Output Power versus Supply Voltage
160
Pout , OUTPUT POWER (WATTS)
140
120
100
80
60
40
20
0
12
14
16
18
20
22
24
26
28
VDD, SUPPLY VOLTAGE (VOLTS)
IDQ = 100 mA
f = 200 MHz
G PS , POWER GAIN (dB)
Pin = 16 W
12 W
8W
22
20
18
16
14
12
10
8
6
4
2
20
40
60
80
100
120
140
160
180
200
220
Pout = 125 W
VDD = 28 V
IDQ = 100 mA
f, FREQUENCY (MHz)
Figure 6. Output Power versus Supply Voltage
Figure 7. Power Gain versus Frequency
MOTOROLA RF DEVICE DATA
MRF174
3
160
Pout , OUTPUT POWER (WATTS)
140
120
100
80
60
40
20
0
–14
TYPICAL DEVICE SHOWN, VGS(th) = 3 V
–12
–10
–8
–6
–4
–2
0
2
4
6
VGS, GATE–SOURCE VOLTAGE (VOLTS)
f = 150 MHz
Pin = CONSTANT
IDQ = 100 mA
VDD = 28 V
5
I D, DRAIN CURRENT (AMPS)
4
VDS = 10 V
3
2
TYPICAL DEVICE SHOWN, VGS(th) = 3 V
1
0
1
2
3
4
5
6
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 8. Output Power versus Gate Voltage
Figure 9. Drain Current versus Gate Voltage
(Transfer Characteristics)
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
1.2
VDD = 28 V
C, CAPACITANCE (pF)
1000
900
800
700
600
500
400
300
200
100
Coss
Ciss
Crss
0
4
8
12
16
20
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
24
28
VGS = 0 V
f = 1 MHz
1.1
1
ID = 4 A
3A
2A
0.9
100 mA
0.8
– 25
0
25
50
75
100
125
150
175
0
TC, CASE TEMPERATURE (°C)
Figure 10. Gate–Source Voltage versus
Case Temperature
Figure 11. Capacitance versus Drain Voltage
20
10
I D, DRAIN CURRENT (AMPS)
6
4
2
1
0.6
0.4
0.2
TC = 25°C
1
2
4
6
10
20
40
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
60
100
Figure 12. DC Safe Operating Area
MRF174
4
MOTOROLA RF DEVICE DATA
f
(MHz)
2.0
5.0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
190
200
210
220
230
240
250
260
270
280
290
300
S11
|S11|
0.932
0.923
0.921
0.921
0.921
0.921
0.922
0.923
0.924
0.925
0.927
0.930
0.930
0.931
0.942
0.936
0.938
0.938
0.940
0.942
0.942
0.952
0.950
0.942
0.943
0.946
0.952
0.958
0.956
0.960
0.956
0.955
∠φ
– 133
– 160
– 170
– 175
– 177
– 177
– 178
– 178
– 178
– 178
– 178
– 178
– 178
– 178
– 178
– 178
– 178
– 178
– 178
– 178
– 178
– 178
– 178
– 178
– 178
– 177
– 177
– 177
– 177
– 177
– 178
– 178
|S21|
74.0
31.6
16.0
8.00
5.32
3.98
3.17
2.63
2.24
1.95
1.72
1.50
1.31
1.19
1.10
1.01
0.936
0.879
0.830
0.780
0.737
0.705
0.668
0.626
0.592
0.566
0.545
0.523
0.500
0.481
0.460
0.443
S21
∠φ
112
98
93
88
86
83
81
79
77
75
73
71
70
68
67
66
65
64
63
61
60
59
57
56
56
55
54
53
52
52
51
50
|S12|
0.011
0.011
0.011
0.011
0.011
0.012
0.012
0.012
0.013
0.013
0.014
0.016
0.018
0.019
0.019
0.021
0.021
0.022
0.023
0.024
0.026
0.027
0.029
0.030
0.032
0.033
0.035
0.036
0.038
0.039
0.042
0.043
S12
∠φ
23
12
10
12
16
21
26
30
34
39
43
45
46
47
49
50
53
53
54
56
59
58
61
61
62
64
64
65
67
68
68
68
|S22|
0.835
0.886
0.896
0.899
0.900
0.901
0.902
0.903
0.904
0.906
0.907
0.910
0.912
0.914
0.919
0.921
0.922
0.923
0.923
0.924
0.928
0.929
0.934
0.933
0.939
0.941
0.943
0.946
0.943
0.946
0.944
0.947
S22
∠φ
– 151
– 168
– 174
– 177
– 178
– 178
– 178
– 178
– 178
– 178
– 178
– 178
– 178
– 178
– 178
– 178
– 178
– 178
– 177
– 177
– 177
– 177
– 177
– 177
– 177
– 177
– 177
– 177
– 177
– 177
– 177
– 177
Table 1. Common Source Scattering Parameters
VDS = 28 V, ID = 3.0 A
MOTOROLA RF DEVICE DATA
MRF174
5
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