SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF176GU/D
The RF MOSFET Line
RF Power
Field-Effect Transistors
N–Channel Enhancement–Mode
Designed for broadband commercial and military applications using push pull
circuits at frequencies to 500 MHz. The high power, high gain and broadband
performance of these devices makes possible solid state transmitters for FM
broadcast or TV channel frequency bands.
•
Electrical Performance
MRF176GU @ 50 V, 400 MHz (“U” Suffix)
Output Power — 150 Watts
Power Gain — 14 dB Typ
Efficiency — 50% Typ
MRF176GV @ 50 V, 225 MHz (“V” Suffix)
Output Power — 200 Watts
Power Gain — 17 dB Typ
Efficiency — 55% Typ
•
100% Ruggedness Tested At Rated Output Power
•
Low Thermal Resistance
•
Low C
rss
— 7.0 pF Typ @ V
DS
= 50 V
MRF176GU
MRF176GV
200/150 W, 50 V, 500 MHz
N–CHANNEL MOS
BROADBAND
RF POWER FETs
D
G
G
S
(FLANGE)
D
CASE 375–04, STYLE 2
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
J
Value
125
±40
16
400
2.27
–65 to +150
200
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.44
Unit
°C/W
Handling and Packaging
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(1)
Drain–Source Breakdown Voltage
(V
GS
= 0, I
D
= 100 mA)
Zero Gate Voltage Drain Current
(V
DS
= 50 V, V
GS
= 0)
Gate–Body Leakage Current
(V
GS
= 20 V, V
DS
= 0)
NOTE:
1. Each side of device measured separately.
REV 9
V
(BR)DSS
I
DSS
I
GSS
125
—
—
—
—
—
—
2.5
1.0
Vdc
mAdc
µAdc
1
ELECTRICAL CHARACTERISTICS — continued
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(1)
Gate Threshold Voltage (V
DS
= 10 V, I
D
= 100 mA)
Drain–Source On–Voltage (V
GS
= 10 V, I
D
= 5.0 A)
Forward Transconductance (V
DS
= 10 V, I
D
= 2.5 A)
V
GS(th)
V
DS(on)
g
fs
1.0
1.0
2.0
3.0
3.0
3.0
6.0
5.0
—
Vdc
Vdc
mhos
DYNAMIC CHARACTERISTICS
(1)
Input Capacitance (V
DS
= 50 V, V
GS
= 0, f = 1.0 MHz)
Output Capacitance (V
DS
= 50 V, V
GS
= 0, f = 1.0 MHz)
Reverse Transfer Capacitance (V
DS
= 50 V, V
GS
= 0, f = 1.0 MHz)
C
iss
C
oss
C
rss
—
—
—
180
100
6.0
—
—
—
pF
pF
pF
FUNCTIONAL CHARACTERISTICS — MRF176GV
(2) (Figure 1)
Common Source Power Gain
(V
DD
= 50 Vdc, P
out
= 200 W, f = 225 MHz, I
DQ
= 2.0 x 100 mA)
Drain Efficiency
(V
DD
= 50 Vdc, P
out
= 200 W, f = 225 MHz, I
DQ
= 2.0 x 100 mA)
Electrical Ruggedness
(V
DD
= 50 Vdc, P
out
= 200 W, f = 225 MHz, I
DQ
= 2.0 x 100 mA,
VSWR 10:1 at all Phase Angles)
NOTES:
1. Each side of device measured separately.
2. Measured in push–pull configuration.
R1
BIAS 0-6 V
C3
C4
C8
C9
C10
+
50 V
-
G
ps
η
ψ
No Degradation in Output Power
15
50
17
55
—
—
dB
%
R2
T1
D.U.T.
T2
C5
C1
C2
C6
C7
C1 — Arco 404, 8.0–60 pF
C2, C3, C6, C8 — 1000 pF Chip
C4, C9 — 0.1
µF
Chip
C5 — 180 pF Chip
C7 — Arco 403, 3.0–35 pF
C10 — 0.47
µF
Chip, Kemet 1215 or Equivalent
L1 — 10 Turns AWG #16 Enameled Wire,
L1 —
Close Wound, 1/4″ I.D.
Board material — .062″ fiberglass (G10),
Two sided, 1 oz. copper,
ε
r
^
5
Unless otherwise noted, all chip capacitors
are ATC Type 100 or Equivalent
L2 — Ferrite Beads of Suitable Material
L2 —
for 1.5–2.0
µH,
Total Inductance
R1 — 100 Ohms, 1/2 W
R2 — 1.0 kOhms, 1/2 W
T1 — 4:1 Impedance Ratio RF Transformer.
T1 —
Can Be Made of 25 Ohm Semirigid
T1 —
Co–Ax, 47–62 Mils O.D.
T2 — 1:4 Impedance Ratio RF Transformer.
T2 —
Can Be Made of 25 Ohm Semirigid
T2 —
Co–Ax, 62–90 Mils O.D.
NOTE: For stability, the input transformer T1 should be loaded
NOTE:
with ferrite toroids or beads to increase the common
NOTE:
mode inductance. For operation below 100 MHz. The
NOTE:
same is required for the output transformer.
Figure 1. 225 MHz Test Circuit
REV 9
2
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL CHARACTERISTICS — MRF176GU
(1) (Figure 2)
Common Source Power Gain
(V
DD
= 50 Vdc, P
out
= 150 W, f = 400 MHz, I
DQ
= 2.0 x 100 mA)
Drain Efficiency
(V
DD
= 50 Vdc, P
out
= 150 W, f = 400 MHz, I
DQ
= 2.0 x 100 mA)
Electrical Ruggedness
(V
DD
= 50 Vdc, P
out
= 150 W, f = 400 MHz, I
DQ
= 2.0 x 100 mA,
VSWR 10:1 at all Phase Angles)
NOTE:
1. Measured in push–pull configuration.
G
ps
η
ψ
No Degradation in Output Power
12
45
14
50
—
—
dB
%
A
BIAS
C11
C12
L1
C1
B1
L2
C2
C3
C4
Z2
D.U.T.
R3
A
B1 — Balun, 50
Ω
Semirigid Coax .086 OD 2″ Long
B2 — Balun, 50
Ω
Semirigid Coax .141 OD 2″ Long
C1, C2, C9, C10 — 270 pF ATC Chip Capacitor
C3 — 15 pF ATC Chip Cap
C4, C8 — 1.0–20 pF Piston Trimmer Cap
C5 — 27 pF ATC Chip Cap
C6, C7 — 22 pF Mini Unelco Capacitor
C11, C13, C14, C15, C16 — 0.01
µF
Ceramic Capacitor
C12 — 1.0
µF
50 V Tantalum Cap
C17, C18 — 680 pF Feedthru Capacitor
.200
C19 — 10
µF
100 V Tantalum Cap
L1, L2 — Hairpin Inductor #18 W
L3, L4 — Hairpin Inductor #18 W
.200″
C14
C16
R1
B
C17
L7
C18
L8
C19
50 V
C13
R2
Z1
C15
C9
Z3
C5
Z4
L6
B
C6
C7
C8
C10
L4
L3
B2
.400″
.200″
L5, L6 — 13T #18 W .250 ID
L7 — Ferroxcube VK–200 20/4B
L8 — 3T #18 W .340 ID
R1 — 1.0 kΩ 1/4 W Resistor
R2, R3 — 10 kΩ 1/4 W Resistor
Z1, Z2 — Microstrip Line .400L x .250W
Z3, Z4 — Microstrip Line .450L x .250W
Ckt Board Material — .060″ teflon–fiberglass, copper clad both sides, 2 oz. copper,
ε
r
= 2.55
Figure 2. 400 MHz Test Circuit
REV 9
3
TYPICAL CHARACTERISTICS
4000
f T, UNITY GAIN FREQUENCY (MHz)
V
DS
= 30 V
100
I D, DRAIN CURRENT (AMPS)
3000
15 V
2000
10
1000
T
C
= 25°C
0
0
1
2
3
4
5
6
7
I
D
, DRAIN CURRENT (AMPS)
8
9
10
1
2
10
50
V
DS
, DRAIN-SOURCE VOLTAGE (VOLTS)
200
Figure 3. Common Source Unity Current Gain*
Gain–Frequency versus Drain Current
* Data shown applies to each half of MRF176GU/GV
Figure 4. DC Safe Operating Area
INPUT AND OUTPUT IMPEDANCE
MRF176GU/GV
V
DD
= 50 V, I
DQ
= 2 x 100 mA
Z
in
300
225
400
150
100
225
300
225
50
30
Z
o
= 10
Ω
150
100
50
30
Z
OL
*
f = 500 MHz
Z
OL
*
400
f = 500 MHz
f
MHz
225
300
400
500
30
50
100
150
225
Z
in
OHMS
(P
out
= 150 W)
2.05 - j2.50
2.00 - j1.10
1.85 + j0.75
1.60 + j2.70
(P
out
= 200 W)
7.50 - j6.50
5.50 - j7.00
3.20 - j6.00
2.50 - j4.80
2.05 - j2.50
17.00 - j4.00
14.00 - j5.00
11.00 - j5.20
8.20 - j5.00
5.00 - j4.20
6.50 - j3.50
4.80 - j3.10
3.00 - j1.90
2.60 + j0.10
Z
OL
*
OHMS
Z
OL
* = Conjugate of the optimum load
impedance into which the device output
operates at a given output power, voltage
and frequency.
NOTE: Input and output impedance values given are measured from gate to gate and drain to drain respectively.
Figure 5. Series Equivalent Input/Output Impedance
REV 9
4
TYPICAL CHARACTERISTICS
500
200
100
50
20
10
5
0
C
rss
C
iss
POWER GAIN (dB)
C
oss
V
GS
= 0 V
f = 1 MHz
30
25
20
15
10
5
V
DS
= 50 V
I
DQ
= 2 x 100 mA
C, CAPACITANCE (pF)
P
out
= 200 W
150 W
20
30
40
10
V
DS
, DRAIN-SOURCE VOLTAGE (VOLTS)
50
5
10
20
50
100
f, FREQUENCY (MHz)
200
500
Figure 6. Capacitance versus Drain–Source Voltage*
* Data shown applies to each half of MRF176GU/GV
Figure 7. Power Gain versus Frequency
MRF176GV
300
Pout , POWER OUTPUT (WATTS)
Pout , OUTPUT POWER (WATTS)
V
DD
= 50 V
200
40 V
320
280
240
200
160
120
80
40
12
0
30
32
34
38
40
42
44
V
DS
, SUPPLY VOLTAGE (VOLTS)
36
46
48
50
I
DQ
= 2 x 100 mA
f = 225 MHz
P
in
= 6 W
4W
2W
100
I
DQ
= 2 x 100 mA
f = 225 MHz
0
0
6
P
in
, POWER INPUT (WATTS)
Figure 8. Power Input versus Power Output
Figure 9. Output Power versus Supply Voltage
REV 9
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
