MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF175LU/D
The RF MOSFET Line
RF Power
Field-Effect Transistors
N–Channel Enhancement–Mode
Designed for broadband commercial and military applications using single
ended circuits at frequencies to 400 MHz. The high power, high gain and
broadband performance of each device makes possible solid state transmitters
for FM broadcast or TV channel frequency bands.
•
Guaranteed Performance
MRF175LU @ 28 V, 400 MHz (“U” Suffix)
Output Power — 100 Watts
Power Gain — 10 dB Typ
Efficiency — 55% Typ
MRF175LV @ 28 V, 225 MHz (“V” Suffix)
Output Power — 100 Watts
Power Gain — 14 dB Typ
Efficiency — 65% Typ
•
100% Ruggedness Tested At Rated Output Power
•
Low Thermal Resistance
•
Low Crss — 20 pF Typ @ VDS = 28 V
G
S
MRF175LU
MRF175LV
100 W, 28 V, 400 MHz
N–CHANNEL
BROADBAND
RF POWER FETs
D
CASE 333–04, STYLE 2
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VGS
ID
PD
Tstg
TJ
Value
65
±
40
13
270
1.54
– 65 to +150
200
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.65
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 50 mA)
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
Gate–Body Leakage Current
(VGS = 20 V, VDS = 0)
V(BR)DSS
IDSS
IGSS
65
—
—
—
—
—
—
2.5
1.0
Vdc
mAdc
µAdc
(continued)
Handling and Packaging
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 8
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF175LU MRF175LV
1
ELECTRICAL CHARACTERISTICS — continued
(TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
Drain–Source On–Voltage (VGS = 10 V, ID = 5.0 A)
Forward Transconductance (VDS = 10 V, ID = 2.5 A)
VGS(th)
VDS(on)
gfs
1.0
0.1
2.0
3.0
0.9
3.0
6.0
1.5
—
Vdc
Vdc
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Ciss
Coss
Crss
—
—
—
180
200
20
—
—
—
pF
pF
pF
FUNCTIONAL CHARACTERISTICS — MRF175LV
(Figure 1)
Common Source Power Gain
(VDD = 28 Vdc, Pout = 100 W, f = 225 MHz, IDQ = 100 mA)
Drain Efficiency
(VDD = 28 Vdc, Pout = 100 W, f = 225 MHz, IDQ = 100 mA)
Electrical Ruggedness
(VDD = 28 Vdc, Pout = 100 W, f = 225 MHz, IDQ = 100 mA,
VSWR 30:1 at all Phase Angles)
Gps
η
ψ
No Degradation in Output Power
12
55
14
65
—
—
dB
%
FUNCTIONAL CHARACTERISTICS — MRF175LU
(Figure 2)
Common Source Power Gain
(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 100 mA)
Drain Efficiency
(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 100 mA)
Electrical Ruggedness
(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 100 mA,
VSWR 30:1 at all Phase Angles)
Gps
η
ψ
No Degradation in Output Power
8.0
50
10
55
—
—
dB
%
RFC1
R1
BIAS
C4
C1
RF INPUT
L1
C2
C3
C6
C7
C8
C5
R2
L4
L2
L3
C9
RF OUTPUT
C10
C11
+28 Vdc
D.U.T.
C1, C2, C8 — Arco 463 or Equivalent
C3, C7 — 25 pF Unelco Cap
C4 — 1000 pF Chip Cap
C5 — 0.01
µF
Chip Cap
C6 — 250 pF Unelco Cap
C9 — Arco 462 or Equivalent
C10 — 1000 pF ATC Chip Cap
C11 — 10
µF
100 V Electrolytic
L1 — Hairpin Inductor #18 Wire
L3 — Hairpin Inductor #16 Wire
0.32″
0.15″
L2 — Stripline Inductor 0.200″ x 0.500″
0.2″
0.45″
L4 — 2 Turns #16 Wire 5/16″ ID
RFC1 — VK200–4B
R1 — 1.0 k 1/4 W Resistor
R2 — 100
Ω
Resistor
Figure 1. 225 MHz Test Circuit
MRF175LU MRF175LV
2
MOTOROLA RF DEVICE DATA
C11
C12
L3
C13
C14
+v
BIAS
C9
.01
m
f
R2
L2
R1
Z2
C1
IN
C2
C3
L1
Z1
C4
Z3
C8
OUT
GND
D.U.T.
C5
C6
C7
C1, C8 — 270 pF ATC Chip Cap
C2, C4, C6, C7 — 1.0 – 20 pF Trimmer Cap
C3 — 15 pF Mini Unelco Cap
C5 — 33 pF Mini Unelco Cap
C9, C12 — 0.1
µF
Ceramic Cap
C11, C14 — 680 pF Feed Thru Cap
C13 — 50
µF
Tantalum Cap
L1 — Hairpin Inductor #18 Wire
0.25″
0.4″
L2 — 12 Turns #18 Wire 0.450″ ID
L3 — Ferroxcube VK200 20/4B
R1 — 10 k 1/4 W Resistor
R2 — 1 k 1/4 W Resistor
R3 — 1.5 k 1/4 W Resistor
Z1 — Microstrip Line 0.950″ x 0.250″
Z2 — Microstrip Line 1″ x 0.250″
Z3 — Microstrip Line 0.550″ x 0.250″
Board Material — 0.062″ Teflon —
fiberglass,
ε
r = 2.56, 1 oz. copper
clad both sides
Figure 2. 400 MHz Test Circuit
TYPICAL CHARACTERISTICS
4000
f T, UNITY GAIN FREQUENCY (MHz)
100
3000
VDS = 20 V
2000
10 V
1000
I D , DRAIN CURRENT (AMPS)
10
TC = 25°C
0
0
0
2
4
6
8
10
12
14
16
18
20
ID, DRAIN CURRENT (AMPS)
0
10
ID, DRAIN CURRENT (AMPS)
100
Figure 3. Common Source Unity Current Gain
Frequency versus Drain Current
Figure 4. DC Safe Operating Area
MOTOROLA RF DEVICE DATA
MRF175LU MRF175LV
3
TYPICAL CHARACTERISTICS
5
I D , DRAIN CURRENT (AMPS)
V GS, GATE-SOURCE VOLTAGE (NORMALIZED)
1.2
VDD = 28 V
1.1
4
VDS = 10 V
3
1
ID = 4 A
3A
2A
2
TYPICAL DEVICE SHOWN, VGS(th) = 3 V
1
0
1
2
3
4
5
6
VGS, GATE–SOURCE VOLTAGE (VOLTS)
0.9
100 mA
0.8
– 25
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (°C)
Figure 5. Drain Current versus Gate Voltage
(Transfer Characteristics)
Figure 6. Gate–Source Voltage versus
Case Temperature
1000
500
Coss
C, CAPACITANCE (pF)
200
100
50
Ciss
VGS = 0 V
f = 1 MHz
Coss
Crss
20
0
0
5
10
15
20
25
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance versus Drain–Source Voltage
MRF175LU MRF175LV
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
MRF175LV
160
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
140
120
100
80
60
40
20
12
16
20
f = 225 MHz
IDQ = 100 mA
24
28
4W
2W
Pin = 6 W
160
140
120
100
80
60
40
20
12
14
16
18
20
22
IDQ = 100 mA
f = 400 MHz
24
26
28
10 W
6W
Pin = 14 W
MRF175LU
VDD, SUPPLY VOLTAGE (VOLTS)
SUPPLY VOLTAGE (VOLTS)
Figure 8. Output Power versus Supply Voltage
Figure 9. Output Power versus Supply Voltage
30
Pout , OUTPUT POWER (WATTS)
160
140
120
100
80
60
40
20
0
5
10
20
50
100
f, FREQUENCY (MHz)
200
500
0
2
4
6
8
10
12
14
16
18
20
Pin, INPUT POWER (WATTS)
VDD = 28 V
IDQ = 100 mA
400 MHz
f = 225 MHz
25
POWER GAIN (dB)
20
15
VDS = 28 V
IDQ = 100 mA
Pout = 100 W
10
5
Figure 10. Power Gain versus Frequency
Figure 11. Output Power versus Input Power
MOTOROLA RF DEVICE DATA
MRF175LU MRF175LV
5
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