MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF177/D
The RF MOSFET Line
RF Power
Field Effect Transistors
MRF177
100 W, 28 V, 400 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFET
N–Channel Enhancement Mode MOSFET
Designed for broadband commercial and military applications up to 400 MHz
frequency range. Primarily used as a driver or output amplifier in push–pull
configurations. Can be used in manual gain control, ALC and modulation
circuits.
•
Typical Performance at 400 MHz, 28 V:
Output Power — 100 W
Gain — 12 dB
Efficiency — 60%
•
Low Thermal Resistance
•
Low Crss — 10 pF Typ @ VDS = 28 Volts
•
Ruggedness Tested at Rated Output Power
•
Nitride Passivated Die for Enhanced Reliability
•
Excellent Thermal Stability; Suited for Class A
Operation
•
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
6
5, 8
7
1, 4
2
3
CASE 744A–01, STYLE 2
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
Storage Temperature Range
Operating Temperature Range
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Value
65
65
±40
16
270
1.54
– 65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction–to–Case
Symbol
R
θJC
Max
0.65
Unit
°C/W
(1) Total device dissipation rating applies only when the device is operated as an RF push–pull amplifier.
NOTE —
CAUTION
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 8
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF177
1
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic (1)
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 50 mA)
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0)
V(BR)DSS
IDSS
IGSS
65
—
—
—
—
—
—
2.0
1.0
Vdc
mAdc
µAdc
ON CHARACTERISTICS
(1)
Gate Threshold Voltage
(VDS = 10 V, ID = 50 mA)
Drain–Source On–Voltage
(VGS = 10 V, ID = 3.0 A)
Forward Transconductance
(VDS = 10 V, ID = 2.0 A)
VGS(th)
VDS(on)
gfs
1.0
—
1.8
3.0
—
2.2
6.0
1.4
—
Vdc
Vdc
mhos
DYNAMIC CHARACTERISTICS
(1)
Input Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Ciss
Coss
Crss
—
—
—
100
105
10
—
—
—
pF
pF
pF
FUNCTIONAL CHARACTERISTICS
(Figure 8) (2)
Common Source Power Gain
(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA)
Drain Efficiency
(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA)
Electrical Ruggedness
(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA,
Load VSWR = 30:1, All Phase Angles At Frequency of Test)
(1) Note each transistor chip measured separately
(2) Both transistor chips operating in push–pull amplifier
GPS
η
ψ
10
55
12
60
—
—
dB
%
No Degradation
in Output Power
Before & After Test
MRF177
2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
140
f = 150 MHz
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
120
225 MHz
100
80
400 MHz
60
40
20
0
0
2
VDD = 28 V
IDQ = 200 mA
4
6
Pin, INPUT POWER (WATTS)
8
10
40
f = 225 MHz
50
30
400 MHz
20
10
VDD = 13.5 V
IDQ = 200 mA
0
2
4
6
Pin, INPUT POWER (WATTS)
8
10
0
Figure 1. Output Power versus Input Power
Figure 2. Output Power versus Input Power
140
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
120
100
80
4W
60
40
20
0
10
12
14
16
18
20
22
24
26
28
30
IDQ = 200 mA
f = 400 MHz
6.3 W
Pin = 10 W
100
90
80
70
60
50
40
30
20
10
0
–5
–4
–3
–2
–1
0
1
2
3
4
5
f = 400 MHz
Pin = CONSTANT
VDS = 28 V
IDQ = 200 mA
VDD, SUPPLY VOLTAGE (VOLTS)
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 3. Output Power versus Supply Voltage
Figure 4. Output Power versus Gate Voltage
420
Ciss
360
C oss , CAPACITANCE (pF)
300
240
180
120
60
0
0
4
Crss
Coss
VGS = 0 V
f = 1 MHz
140
120
100
ID , DRAIN CURRENT (AMPS)
100
80
60
40
20
24
0
28
Crss , C iss , CAPACITANCE (pF)
20
10
4
2
1
TC = 25° C
0.4
0.2
0.1
1
2
4 6 10
20
40 60 100
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
8
12
16
20
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 5. Capacitance versus Drain Voltage
Figure 6. DC Safe Operating Area
MOTOROLA RF DEVICE DATA
MRF177
3
f = 400 MHz
f = 400 MHz
Zo = 10
Ω
ZOL*
200
150
Zin
100
200
150
100
NOTE: Input and Output Impedance values given are measured
gate–to–gate and drain–to–drain respectively.
VDD = 28 V IDQ = 200 mA Pout = 100 W
f
Zin
ZOL*
(MHz)
Ohms
Ohms
100
150
200
400
2.0 – j11.5
2.05 – j9.45
2.1 – j7.5
2.35 + j0.4
3.5 – j6
3.35 – j5.34
3.3 – j4.4
3.2 – j1.38
ZOL*: Conjugate of optimum load impedance
into which the device operates at a
given output power, voltage, current
and frequency.
Figure 7. Impedance or Admittance Coordinates
MRF177
4
MOTOROLA RF DEVICE DATA
VDD = 28 V
+
D1
R2
R1
R4
C13
RF
INPUT
C1
+
C2
T1
C3
C4
C6
T2
C5
MS1
R3
C14 +
+
C15
C16
L1
FERRITE BEAD
FERRITE BEAD
FERRITE BEAD
L2
C17
+
C18
MRF177
T3
C10
MS3
C7
MS2
MS4
C8
C9
C11
T4
RF
OUTPUT
C12
D.U.T.
R5
MICROSTRIP DETAIL
0.15″
0.45″
0.325″
0.10″
MS1
0.325″
0.10″
MS3
0.15″
0.45″
0.45″
0.15″
MS2
MS4
0.45″
0.15″
0.10″
0.10″
0.325″
0.325″
C1, C12
C2, C3, C5, C6, C10, C11
C4, C9
C7
C8
C13, C14
C15, C18
C16
C17
1–10 pF JOHANSON OR EQUIVALENT D1
L1
270 pF ATC 100 MIL CHIP CAP
1–20 pF
L2
36 pF CHIP CAP
R1, R4, R5
10 pF CHIP CAP
R2
0.1
µFD
@ 50 Vdc
R3
10
µFD
@ 50 Vdc
T1
500 pF BUTTON
T2
1000 pF UNCASED MICA
T3
T4
BOARD
1N5347B, 20 Vdc
1–TURN NO. 18, 0.25″, 2–HOLE FERRITE BEAD
8–1/2 TURNS NO. 18, CLOSE WOUND .375″ DIA.
10 kΩ @ 1/2 W RESISTOR
10 kΩ, 10 TURN RESISTOR
2.0 kΩ @ 1/2 W RESISTOR
1–1/2 T, 50
Ω
COAX, .034″ DIA. ON DUAL 0.5″ FERRITE CORE
2.0″ 25
Ω
COAX, .075″ DIA.
2.1″ 10
Ω
COAX, .075″ DIA.
4.0″ 50
Ω
COAX, .0865″ DIA.
Dielectric Thickness = 0.060″ 2oz Copper, Cu–Clad, Teflon Fiberglass,
ε
r = 2.55
Figure 8. Test Circuit Electrical Schematic
MOTOROLA RF DEVICE DATA
MRF177
5
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