MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF18060A/D
MRF18060A
RF Power Field Effect Transistors MRF18060AR3
N–Channel Enhancement–Mode Lateral MOSFETs
MRF18060ALSR3
Designed for PCN and PCS base station applications with frequencies from
MRF18060ASR3
1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
The RF MOSFET Line
applications. To be used in Class AB for PCN–PCS/cellular radio and WLL
applications. Specified for GSM1805 – 1880 MHz.
•
Typical GSM Performance, Full Frequency Band (1805 – 1880 MHz)
Power Gain — 13 dB (Typ) @ 60 Watts
Efficiency — 45% (Typ) @ 60 Watts
•
Internally Matched, Controlled Q, for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts CW Output Power
•
Excellent Thermal Stability
•
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm,
13 Inch Reel.
•
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40
µ″
Nominal.
1.80 – 1.88 GHz, 60 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465–06, STYLE 1
NI–780
MRF18060A
CASE 465A–06, STYLE 1
NI–780S
MRF18060ALSR3, MRF18060ASR3
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
C
≥
25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
–0.5, +15
180
1.03
–65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
2 (Minimum)
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.97
Unit
°C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
MOTOROLA RF
Motorola, Inc. 2002
DEVICE DATA
MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3
1
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 10
µAdc)
Zero Gate Voltage Drain Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
µAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 500 mAdc)
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance (Including Input Matching Capacitor in Package) (1)
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance (1)
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system)
Common–Source Amplifier Power Gain @ 60 W (2)
(V
DD
= 26 Vdc, I
DQ
= 500 mA, f = 1805 – 1880 MHz)
Drain Efficiency @ 60 W (2)
(V
DD
= 26 Vdc, I
DQ
= 500 mA, f = 1805 – 1880 MHz)
Input Return Loss (2)
(V
DD
= 26 Vdc, P
out
= 60 W CW, I
DQ
= 500 mA,
f = 1805 – 1880 MHz)
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 60 W CW, I
DQ
= 500 mA VSWR = 10:1,
All Phase Angles at Frequency of Tests)
G
ps
11.5
η
43
IRL
—
45
—
—
–10
dB
13
—
%
dB
C
iss
C
oss
C
rss
—
—
—
160
740
2.7
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
2.5
—
—
—
3.9
0.27
4.7
4
4.5
—
—
Vdc
Vdc
Vdc
S
V
(BR)DSS
I
DSS
I
GSS
65
—
—
—
—
—
—
6
1
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
(2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1800 band, ensuring batch–to–batch
consistency.
MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3
2
MOTOROLA RF DEVICE DATA
R2
R1
T1
R3
Z6
C4
+
C3
V
DD
V
GG
C1
R4
C2
R5
Z1
C5
Z2
C6
Z3
DUT
Z4
Z5
C7
RF
INPUT
Z7
RF
OUTPUT
C1
C2, C4, C7
C3
C5
C6
R1, R3
R2, R4
R5
T1
100 nF Chip Capacitor (1203)
10 pF Chip Capacitors
10
mF,
35 V Electrolytic Tantalum Capacitor
1.2 pF Chip Capacitor
1.0 pF Chip Capacitor
2.2 kΩ Chip Resistors (0805)
2.7 kΩ Chip Resistors (0805)
1.1 kΩ Chip Resistor (0805)
BC847 Transistor SOT–23
Z1
Z2
Z3
Z4
Z5
Z6
Z7
0.47″ x 0.09″ Microstrip
1.16″ x 0.09″ Microstrip
0.57″ x 0.95″ Microstrip
0.59″ x 1.18″ Microstrip
1.26″ x 0.15″ Microstrip
1.15″ x 0.09″ Microstrip
0.37″ x 0.09″ Microstrip
Figure 1. 1805 – 1880 MHz Test Fixture Schematic
VBIAS
R1
R2
T1
R3
C1
R4
C2
R5
C6
C5
C3
C4
VSUPPLY
C7
Ground
MRF18060
Ground
Figure 2. 1805 – 1880 MHz Test Fixture Component Layout
MOTOROLA RF DEVICE DATA
MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3
3
V
bias
C1
R3
T2
R4
C3
R4
C7
C8
C6
MRF18060
Figure 4. 1800 – 2000 MHz Demo Board Component Layout
MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3
4
MOTOROLA RF DEVICE DATA
Î
ÎÎÎ
ÎÎÎ
Î
Î
ÎÎÎ
Î Î
Î
ÎÎÎ
ÎÎÎ
ÎÎ
Î
Î
R2
R3
T2
ÎÎ
ÎÎ
ÎÎ
ÎÎ
ÎÎ
Î
ÎÎÎ
ÎÎÎ
ÎÎÎ
T1
T1
RF
INPUT
C1
C2
C3, C5, C8
C4
C6
C7
R1
R2, R6
R3
R4
R5
C1
R1
R2
R5
V
supply
C2
C4
+
C5
R6
RF
OUTPUT
Z1
C6
Z2
C7
Z3
Z4
Z6
Z5
C8
Z7
1
mF
Chip Capacitor (0805)
100 nF Chip Capacitor (0805)
10 pF Chip Capacitors, ACCU–P (0805)
10
mF,
35 V Tantalum Electrolytic Capacitor
1.8 pF Chip Capacitor, ACCU–P (0805)
1 pF Chip Capacitor, ACCU–P (0805)
10
Ω
Chip Resistor (0805)
1 kΩ Chip Resistors (0805)
1.2 kΩ Chip Resistor (0805)
2.2 kΩ Chip Resistor (0805)
5 kΩ, SMD Potentiometer
T1
LP2951 Micro–8 Voltage Regulator
T2
BC847 SOT–23 NPN Transistor
Z1
0.159″ x 0.055″ Microstrip
Z2
0.982″ x 0.055″ Microstrip
Z3
0.087″ x 0.055″ Microstrip
Z4
0.512″ x 0.787″ Microstrip
Z5
0.433″ x 1.220″ Microstrip
Z6
1.039″ x 0.118″ Microstrip
Z7
0.268″ x 0.055″ Microstrip
Substrate = 0.5 mm Teflon
Glass,
ε
r
= 2.55
Figure 3. 1800 – 2000 MHz Demo Board Schematic
V
bias
Ground
V
supply
R1
T1
C4
R5
C2
C3
R6
MRF18060
C5
Î
Î Î
Î
ÎÎ Î Î
ÎÎÎ
ÎÎ
Î
ÎÎÎ
ÎÎÎ
ÎÎÎ
TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD)
16
Pout , OUTPUT POWER (WATTS)
15
G ps, POWER GAIN (dB)
14
13
12
I
DQ
= 750 mA
100
90
80
70
60
50
40
30
20
10
0
1W
V
DD
= 26 Vdc
I
DQ
= 500 mA
18
20
24
26
22
V
DD
, SUPPLY VOLTAGE (VOLTS)
28
30
P
in
= 5 W
2.5 W
500 mA
11 300 mA
10
9
8
1
100 mA
V
DD
= 26 Vdc
f = 1880 MHz
10
P
out
, OUTPUT POWER (WATTS)
100
Figure 5. Power Gain versus
Output Power
Figure 6. Output Power versus Supply Voltage
90
Pout , OUTPUT POWER (WATTS)
80
70
60
50
40
30
20
10
0
1800
1820
P
in
= 6 W
Pout , OUTPUT POWER (WATTS)
90
80
70
60
50
40
30
20
10
1880
1900
0
0
1
V
DD
= 26 Vdc
I
DQ
= 500 mA
f = 1880 MHz
2
3
4
P
in
, INPUT POWER (WATTS)
5
6
h
P
out
60
55
η
, DRAIN EFFICIENCY (%)
50
45
40
35
30
25
20
15
3W
V
DD
= 26 Vdc
I
DQ
= 500 mA
1W
0.5 W
1860
1840
f, FREQUENCY (MHz)
Figure 7. Output Power versus Frequency
Figure 8. Output Power and Efficiency
versus Input Power
0
-2
-6
-8
-10
-12
-14
IRL
V
DD
= 26 Vdc
I
DQ
= 500 mA
2000
2100
-16
-18
-20
IRL, INPUT RETURN LOSS (dB)
G
ps
-4
15.0
14.5
14.0
G ps, POWER GAIN (dB)
13.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
1700
1800
1900
f, FREQUENCY (MHz)
Figure 9. Wideband Gain and IRL
(at Small Signal)
MOTOROLA RF DEVICE DATA
MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3
5
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