MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF184/D
The RF MOSFET Line
RF POWER Field-Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications at frequen-
cies to 1.0 GHz. The high gain and broadband performance of these devices
makes them ideal for large–signal, common source amplifier applications in 28
volt base station equipment.
•
Guaranteed Performance @ 945 MHz, 28 Volts
Output Power = 60 Watts
Power Gain = 11.5 dB
Efficiency = 53%
•
Characterized with Series Equivalent Large–Signal
D
Impedance Parameters
•
S–Parameter Characterization at High Bias Levels
•
Excellent Thermal Stability
•
Capable of Handling 30:1 VSWR @ 28 Vdc,
945 MHz
G
MRF184
MRF184S
60 W, 1.0 GHz
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–01, STYLE 1
(MRF184)
CASE 360C–03, STYLE 1
(MRF184S)
S
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 70°C
Derate above 70°C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VGS
ID
PD
Tstg
TJ
Value
65
±
20
7
118
0.9
– 65 to +150
200
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
1.1
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 V, ID = 1
m
Adc)
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0 V)
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0 V)
V(BR)DSS
IDSS
IGSS
65
–
–
–
–
–
–
1
1
Vdc
µAdc
µAdc
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF184 MRF184S
1
ELECTRICAL CHARACTERISTICS – continued
(TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 V, ID = 200
µA)
Gate Quiescent Voltage
(VDS = 28 V, ID = 100 mA)
Drain–Source On–Voltage
(VGS = 10 V, ID = 3 A)
Forward Transconductance
(VDS = 10 V, ID = 3 A)
VGS(th)
VGS(Q)
VDS(on)
gfs
2
3
–
2.2
3
4
0.65
2.6
4
5
0.8
–
Vdc
Vdc
Vdc
s
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Output Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Ciss
Coss
Crss
–
–
–
83
44
4.3
–
–
–
pF
pF
pF
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain
(VDD = 28 V, Pout = 60 W, f = 945 MHz, IDQ = 100 mA)
Drain Efficiency
(VDD = 28 V, Pout = 60 W, f = 945 MHz, IDQ = 100 mA)
Load Mismatch
(VDD = 28 V, Pout = 60 W, IDQ = 100 mA, f = 945 MHz,
Load VSWR 5:1 at all Phase Angles)
R1
R2
C5
R3
C6
C7
C8
C9
L1
C2
B1
C10
C13
Gps
η
ψ
No Degradation in Output Power
11.5
53
15
60
–
–
dB
%
VGG
R4
C11
C12
VDD
DUT
RF
INPUT
TL1
C1
TL2
TL3
C4
TL4
RF
OUTPUT
C3
B1
C1
C2, C3, C6, C9
C4
C5, C12
C7, C10
C8, C11
C13
Short RF Bead Fair Rite–2743019447
18 pF Chip Capacitor
43 pF Chip Capacitor
100 pF Chip Capacitor
10
µF,
50 Vdc Electrolytic Capacitor
1000 pF Chip Capacitor
0.1
µF,
50 Vdc Chip Capacitor
250
µF,
50 Vdc Electrolytic Capacitor
L1
R1
R2
R3
R4
TL1–TL4
Ckt Board
5 Turns, 20 AWG, IDIA 0.126″
10 kΩ, 1/4 W Resistor
13 kΩ, 1/4 W Resistor
1.0 kΩ, 1/4 W Chip Resistor
4 x 39
Ω,
1/8 W Chip Resistor
Microstrip Line See Photomaster
1/32″ Glass Teflon,
ε
r = 2.55
ARLON–GX–0300–55–22
Figure 1. MRF184 Test Circuit Schematic
MRF184 MRF184S
2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
– 20
3rd ORDER
– 30
– 40
5th
– 50
7th
– 60
–70
– 80
VDD = 28 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
IDQ = 400 mA
0
10
20
30
40
50
Pout, OUTPUT POWER (WATTS PEP)
60
70
–15
– 25
IDQ = 100 mA
– 35
250 mA
600 mA
– 45
400 mA
– 55
0.1
VDD = 28 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
100
1
10
Pout, OUTPUT POWER (WATTS PEP)
Figure 2. Intermodulation Distortion versus
Output Power
18
Pout , OUTPUT POWER (WATTS)
80
70
60
50
40
30
20
10
0
1
10
Pout, OUTPUT POWER (WATTS)
100
0
Figure 3. Intermodulation Distortion versus
Output Power
16
Gpe
Gpe , POWER GAIN (dB)
Gpe , POWER GAIN (dB)
IDQ = 600 mA
16
400 mA
250 mA
14
100 mA
VDD = 28 Vdc
f = 945 MHz
12
15
Pout
VDS = 28 Vdc
IDQ = 400 mA
f = 945 MHz
0.5
1.5
1
2
Pin, INPUT POWER (WATTS)
2.5
14
3
Figure 4. Power Gain versus Output Power
Figure 5. Output Power versus Input Power
100
90
P out , OUTPUT POWER (WATTS)
80
70
60
50
40
30
20
10
0
12
14
16
18
IDQ = 400 mA
f = 945 MHz
24
20
22
26
28
VDD, SUPPLY VOLTAGE (VOLTS)
30
32
1.0 W
2.0 W
Pin = 4.0 W
P out , OUTPUT POWER (WATTS)
80
70
60
50
TYPICAL DEVICE SHOWN
40
30
20
10
0
0
0.5
VDS = 28 Vdc
Pin = 2.0 W
f = 945 MHz
1.5
2
3.5
1
2.5
3
4
VGS, GATE–SOURCE VOLTAGE (VOLTS)
4.5
5
Figure 6. Output Power versus Supply Voltage
Figure 7. Output Power versus Gate Voltage
MOTOROLA RF DEVICE DATA
MRF184 MRF184S
3
TYPICAL CHARACTERISTICS
90
80
P out , OUTPUT POWER (WATTS)
I D, DRAIN CURRENT (mA)
70
60
50
40
30
20
10
0
800
820
840
860
880 900 920 940
f, FREQUENCY (MHz)
960
980 1000
VDD = 28 Vdc
IDQ = 400 mA
SINGLE TONE
1.0 W
Pin = 2.5 W
4
3.5
3
2.5
TYPICAL DEVICE SHOWN
2
1.5
1
0.5
0
0
1
2
4
3
VGS, GATE VOLTAGE (VOLTS)
5
6
VDS = 28 Vdc
0.5 W
Figure 8. Output Power versus Frequency
Figure 9. Drain Current versus Gate Voltage
140
120
100
80
60
40
20
Crss
0
0
5
15
25
35
40
10
20
30
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
45
50
VGS = 0 Vdc
f = 1.0 MHz
Coss
Ciss
I D, DRAIN CURRENT (AMPS)
C, CAPACITANCE (pF)
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
TJ = 150°C
TF = 70°C
5
15
25
10
20
VDS, DRAIN VOLTAGE (Vdc)
30
35
Figure 10. Capacitance versus Voltage
Figure 11. DC Safe Operating Area
0
5
10
20
15
25
VDS, DRAIN VOLTAGE (Vdc)
30
35
13
880
900
940
920
f, FREQUENCY (MHz)
960
35
980
Figure 12. DC Safe Operating Area
Figure 13. Performance in Broadband Circuit
MRF184 MRF184S
4
MOTOROLA RF DEVICE DATA
1.0
7
6.5
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
I D, DRAIN CURRENT (AMPS)
15.5
Gpe, POWER GAIN (dB)
15
η
60
55
Gpe
14.5
14
13.5
VDD = 28 Vdc
IDQ = 400 mA
Pout = 60 W (CW)
50
45
40
VSWR
TJ = 175°C
TF = 70°C
1.5
2.0
INPUT VSWR
2.5
η
, EFFICIENCY (%)
16
65
60
50
P out , OUTPUT POWER (dBm)
40
30
20
10
0
–10
3rd ORDER
VDS = 26 Vdc
ID = 2.1 A
f1 = 945 MHz
f2 = 945.1 MHz
15
25
20
30
Pin, INPUT POWER (dBm)
35
40
FUNDAMENTAL
– 20
– 30
– 40
10
Figure 14. Class A Third Order Intercept Point
R1
C5
R2
R3
C2
L1
C8
C7
C6
B1
C9
R4
C11
C12
C10
C13
C1
TL2
TL1
TL3
C4
TL4
C3
XRF184
Figure 15. Component Parts Layout
MOTOROLA RF DEVICE DATA
MRF184 MRF184S
5
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