MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF19060/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier
applications.
•
Typical CDMA Performance: 1960 MHz, 26 Volts
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 7.5 Watts
Power Gain — 12.5 dB
Adjacent Channel Power —
885 kHz: –47 dBc @ 30 kHz BW
1.25 MHz: –55 dBc @ 12.5 kHz BW
2.25 MHz: –55 dBc @ 1 MHz BW
•
Internally Matched, Controlled Q, for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 60 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
•
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch
Reel.
MRF19060
MRF19060R3
MRF19060SR3
1990 MHz, 60 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465–06, STYLE 1
NI–780
MRF19060R3
CASE 465A–06, STYLE 1
NI–780S
MRF19060SR3
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
C
≥
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
–0.5, +15
180
1.03
–65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.97
Unit
°C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
MOTOROLA RF
Motorola, Inc. 2002
DEVICE DATA
MRF19060 MRF19060R3 MRF19060SR3
1
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 10
µAdc)
Zero Gate Voltage Drain Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
µAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 500 mAdc)
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(V
DS
= 26 Vdc, V
GS
= 0, f = 1 MHz)
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system)
Two–Tone Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 500 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
Two–Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 500 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 500 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 500 mA,
f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)
P
out
, 1 dB Compression Point
(V
DD
= 26 Vdc, P
out
= 60 W CW, f = 1990 MHz)
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 60 W CW, I
DQ
= 500 mA,
f = 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
(1) Part is internally matched both on input and output.
G
ps
11
12.5
—
dB
C
rss
—
2.7
—
pF
g
fs
VGS
(th)
V
GS(Q)
V
DS(on)
—
2
2.5
—
4.7
—
3.9
0.27
—
4
4.5
—
S
V
V
V
V
(BR)DSS
I
DSS
I
GSS
65
—
—
—
—
—
—
6
1
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
η
33
36
—
%
IMD
—
–31
–28
dBc
IRL
—
–12
—
dB
P1dB
Ψ
—
60
—
W
No Degradation In Output Power
Before and After Test
MRF19060 MRF19060R3 MRF19060SR3
2
MOTOROLA RF DEVICE DATA
R4
V
GG
+
+
C1
C2
R1
R2
R3
+
C3
C4
C5
C6
B2
C7
C8
B3
V
DD
+
Z9
Z10
RF
INPUT
Z11
Z1
Z2
C10
C9
Z3
Z4
Z5
Z6
Z7
Z8
DUT
Z12
Z13
Z14
Z15
Z16
C11
Z17
Z18
RF
OUTPUT
C12
B2 – B3
C1
C2, C7
C3, C8
C4
C5
C6
C9
C10, C11
C12
R1
R2
R3
R4
Z1
Z2
Z3
Ferrite Beads, Fair Rite, 2743019447
10
µF,
50 V Electrolytic Capacitor, Panasonic #ECEV1HV100R
1000 pF Chip Capacitors, B Case, ATC #100B102JCA500X
0.10
µF
Chip Capacitors, B Case, Kemet #CDR33BX104AKWS
5.1 pF Chip Capacitor, B Case, ATC #100B5R1JCA500X
6.2 pF Chip Capacitor, B Case, ATC #100B6R2JCA500X
22
µF,
35 V Tantalum Capacitor, SMT, Sprague
0.8 pF – 8.0 pF Variable Capacitor, Johanson Gigatrim
10 pF Chip Capacitors, B Case, ATC #100B100JCA500X
0.4 pF – 2.5 pF Variable Capacitor, Johanson Gigatrim
1 kΩ, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″
560 kΩ, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″
15
Ω,
1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″
10
Ω,
1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″
0.580″ x 0.074″ Microstrip
0.100″ x 0.074″ Microstrip
0.384″ x 0.074″ Microstrip
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Board
0.152″ x 0.140″ Microstrip
0.090″ x 0.102″ Microstrip
0.245″ x 0.217″ Microstrip
0.090″ x 0.737″ Microstrip
0.530″ x 0.941″ Microstrip
1.010″ x 0.050″ Microstrip
1.060″ x 0.050″ Microstrip
0.446″ x 1.137″ Microstrip
0.152″ x 0.567″ Microstrip
0.183″ x 0.220″ Microstrip
0.100″ x 0.338″ Microstrip
0.480″ x 0.142″ Microstrip
0.140″ x 0.080″ Microstrip
0.173″ x 0.080″ Microstrip
0.420″ x 0.080″ Microstrip
0.030″ Glass Teflon
Arlon
GX–0300–55–22, 2 oz Cu
Figure 1. MRF19060 Test Circuit Schematic
MOTOROLA RF DEVICE DATA
MRF19060 MRF19060R3 MRF19060SR3
3
TO GATE
BIAS
FEEDTHRU
C2
C1
R2
R1
R3
C3
C4
C5
R4
C7
C6
B2
B3
C8
TO DRAIN
BIAS
FEEDTHRU
C9
C10
C11
C12
MRF19060
Figure 2. MRF19060 Test Circuit Component Layout
MRF19060 MRF19060R3 MRF19060SR3
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
η
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
η
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
40
35
30
25
20
15
10
5
0
1900
1920
IRL
V
DD
= 26 Vdc
P
out
= 60 W (PEP), I
DQ
= 500 mA
Two-Tone Measurement, 100 kHz Tone Spacing
G
ps
IMD
1940
1960
1980
f, FREQUENCY (MHz)
2000
η
0
-5
-10
-15
-20
-25
-30
-35
-40
2020
ADJACENT CHANNEL POWER RATIO (dB)
IMD, INTERMODULATION DISTORTION (dBc)
45
40
V
DD
= 26 Vdc
I
DQ
= 700 mA, f = 1960 MHz, Channel Spacing
(Channel Bandwidth): 885 kHz (30 kHz),
1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz)
2.25 MHz
885 kHz
1.25 MHz
G
ps
CDMA 9 Channels Forward
Pilot:0, Paging:1, Traffic:8-13, Sync:32
4
12
8
16
P
out
, OUTPUT POWER (WATTS Avg.) CDMA
η
-20
-30
-40
-50
-60
-70
-80
-90
35
30
25
20
15
10
5
-100
20
Figure 3. Class AB Broadband Circuit Performance
Figure 4. CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
-25
IMD, INTERMODULATION DISTORTION (dBc)
-30
-35
-40
-45
-50
-55
-60
-65
0.1
IMD, INTERMODULATION DISTORTION (dBc)
V
DD
= 26 Vdc
f = 1960 MHz
Two-Tone Measurement, 100 kHz Tone Spacing
900 mA
-20
-30
-40
-50
-60
-70
-80
0.1
V
DD
= 26 Vdc
I
DQ
= 700 mA, f = 1960 MHz
Two-Tone Measurement, 100 kHz Tone Spacing
3rd Order
500 mA
700 mA
5th Order
7th Order
10
1.0
P
out
, OUTPUT POWER (WATTS) PEP
100
10
1.0
P
out
, OUTPUT POWER (WATTS) PEP
100
Figure 5. Intermodulation Distortion
versus Output Power
14
900 mA
G ps , POWER GAIN (dB)
13
700 mA
13
13.5
Figure 6. Intermodulation Products
versus Output Power
-22
-24
-26
-28
12.5
G
ps
-30
-32
12
IMD
-34
-36
100
11.5
22
24
26
28
30
-38
32
P
out
= 60 W (PEP), I
DQ
= 500 mA
f = 1960 MHz
Two-Tone Measurement, 100 kHz Tone Spacing
12
500 mA
11
10
0.1
V
DD
= 26 Vdc
f = 1960 MHz
Two-Tone Measurement, 100 kHz Tone Spacing
1.0
10
P
out
, OUTPUT POWER (WATTS) PEP
G ps , POWER GAIN (dB)
V
DD
, DRAIN VOLTAGE (VOLTS)
Figure 7. Power Gain versus Output Power
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
MOTOROLA RF DEVICE DATA
MRF19060 MRF19060R3 MRF19060SR3
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
