MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF21010/D
The RF MOSFET Line
MRF21010LR1
RF Power Field Effect Transistors MRF21010LSR1
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
•
Typical W - CDMA Performance: - 45 dBc ACPR, 2140 MHz, 28 Volts,
5 MHz Offset/4.096 MHz BW, 15 DTCH
Output Power — 2.1 Watts
Power Gain — 13.5 dB
Efficiency — 21%
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR @ 28 Vdc, 2170 MHz,
10 Watts CW Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel.
•
Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
2170 MHz, 10 W, 28 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 360B - 05, STYLE 1
NI - 360
MRF21010LR1
CASE 360C - 05, STYLE 1
NI - 360S
MRF21010LSR1
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
65
- 0.5, +15
43.75
0.25
- 65 to +150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
THERMAL CHARACTERISTICS
Max
5.5
Unit
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M1 (Minimum)
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 7
MOTOROLA RF
Motorola, Inc. 2003
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF21010LR1 MRF21010LSR1
1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain - Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
=10
µA)
Zero Gate Voltage Drain Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 V, I
D
= 50
µA)
Gate Quiescent Voltage
(V
DS
= 28 V, I
D
= 100 mA)
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2.5
2.5
—
—
3
4
0.4
0.95
4
4.5
0.5
—
Vdc
Vdc
Vdc
S
V
(BR)DSS
I
DSS
I
GSS
65
—
—
—
—
—
—
10
1
Vdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Freescale Semiconductor, Inc...
Drain - Source On - Voltage
(V
GS
= 10 V, I
D
= 0.5 A)
Forward Transconductance
(V
DS
= 10 V, I
D
= 1 A)
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system)
Two - Tone Common Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 10 W PEP, I
DQ
= 100 mA,
f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
Two - Tone Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 10 W PEP, I
DQ
= 100 mA,
f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
Third Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 10 W PEP, I
DQ
= 100 mA,
f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 10 W PEP, I
DQ
= 100 mA,
f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz)
Output Power, 1 dB Compression Point, CW
(V
DD
= 28 Vdc, I
DQ
= 100 mA, f = 2170 MHz)
Common - Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 10 W CW, I
DQ
= 100 mA,
f = 2170 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 10 W CW, I
DQ
= 100 mA,
f = 2170 MHz)
Output Mismatch Stress
(V
DD
= 28 Vdc, P
out
= 10 W CW, I
DQ
= 100 mA,
f = 2170 MHz, VSWR = 10:1, All Phase Angles at Frequency
of Tests)
C
rss
—
1
—
pF
G
ps
12
13.5
—
dB
η
31
35
—
%
IMD
—
- 35
- 30
dBc
IRL
—
- 12
- 10
dB
P1dB
G
ps
—
—
11
12
—
—
W
dB
η
—
42
—
%
Ψ
No Degradation In Output Power
Before and After Test
MRF21010LR1 MRF21010LSR1
2
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
V
GG
+
C3
C4
C5
Z4
Z5
RF
OUTPUT
R1
R2
C6
C7
+
C8
+
C9
V
DD
RF
INPUT
DUT
Z1
Z2
C2
C1
Z3
Z6
Z7
C10
Z8
Freescale Semiconductor, Inc...
Z1
Z2
Z3
Z4
Z5
0.964″
0.905″
0.433″
1.068″
0.752″
x 0.087″
x 0.087″
x 0.512″
x 0.087″
x 0.087″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z6
Z7
Z8
PCB
0.453″ x 1.118″ Microstrip
0.921″ x 0.154″ Microstrip
0.925″ x 0.087″ Microstrip
Taconic TLX8 - 0300, 0.030″,
ε
r
= 2.55
Figure 1. MRF21010L Test Circuit Schematic
Table 1. MRF21010L Test Circuit Component Designations and Values
Part
C1 *
C2
C3, C9
C4, C7
C5, C6
C8
C10
N1, N2
R1
R2
(eared)
(earless)
Description
2.2 pF Chip Capacitor, B Case
1.8 pF Chip Capacitor, B Case
0.5 pF Chip Capacitor, B Case
10
µF,
35 V Tantalum Chip Capacitors
1 nF Chip Capacitors, B Case
5.6 pF Chip Capacitors, B Case
470
µF,
63 V Electrolytic Capacitor
10 pF Chip Capacitor, B Case
Type N Connector Flange Mounts
1.0 kW Chip Resistor (0805)
12
W
Chip Resistor (0805)
100B100GW
3052 - 1648 - 10
ATC
Macom
Value, P/N or DWG
100B2R2BW
100B1R8BW
100B0R5BW
293D106X9035D2T
100B102JW
100B5R6BW
Manufacturer
ATC
ATC
ATC
Sprague - Vishay
ATC
ATC
* Piece part depending on eared / earless version of the device.
C8
VGG
C3
R1
R2
C4 C5
C6 C7
C9
VDD
RF Input
C2
C1
C10
RF Output
CUTOUT AREA
MRF21010
C−XM−00−001−01
Figure 2. MRF21010L Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF21010LR1 MRF21010LSR1
3
Freescale Semiconductor, Inc.
VGG
V DD
Ground
C1
R2
R1
T1
R3
C6
T2
P1
C4 C5
R4
C2
C3
C7
R6
R5
C8
L1
L2
L3
L4
C9
L5
Freescale Semiconductor, Inc...
C10
MRF21010
C−XM−99−001−01
Figure 3. MRF21010L Demonstration Board Component Layout
Table 2. MRF21010L Demonstration Board Component Designations and Values
Designators
C1
C2, C6
C3, C4
C5
C7
C8, C10
C9
L1
L2
L3
L4
L5
R1, R6
R2, R3
R4
R5
P1
T1
T2
PCB
Description
1
mF
Chip Capacitor (0805), AVX #08053G105ZATEA
10
mF,
35 V Tantalum Capacitors, Vishay - Sprague #293D106X9035D
6.8 pF Chip Capacitors, ACCU - P (0805), AVX #08051J6R8CBT
10 nF Chip Capacitor (0805), AVX #08055C103KATDA
1.5 pF Chip Capacitor, ACCU - P (0805), AVX #08051J2R2BBT
0.5 pF Chip Capacitors, ACCU - P (0805), AVX #08051J0R5BBT
10 pF Chip Capacitor, ACCU - P (0805), AVX #08055J100GBT
19 mm
×
1.07 mm
7.7 mm
×
13.8 mm
9.3 mm
×
22 mm
17.7 mm
×
3.5 mm
3.4 mm
×
1.5 mm
10
W,
1/8 W Chip Resistors (0805)
1 kW, 1/8 W Chip Resistors (0805)
2.2 kW, 1/8 W Chip Resistor (0805)
0
W,
1/8 W Chip Resistor (0805)
5 kW Potentiometer CMS Cermet Multi - Turn, Bourns #3224W
Voltage Regulator, Micro - 8, Motorola #LP2951
Bipolar NPN Transistor, SOT - 23, Motorola #BC847
Rogers RO4350, 0.5 mm,
ε
r
= 3.53
MRF21010LR1 MRF21010LSR1
4
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
η
, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB)
η
, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
40
35
30
25
20
15
10
5
0
2000
2080
2110
2140
2170
f, FREQUENCY (MHz)
2200
G
ps
IMD
IRL
V
DD
= 28 Vdc, P
out
= 10 W (PEP), I
DQ
= 100 mA
Two Tone Measurement, 100 kHz Tone Spacing
η
0
−5
−10
−15
−20
−25
−30
−35
−40
2280
30
V
DD
= 28 Vdc, I
DQ
= 130 mA, f = 2140 MHz
Channel Spacing 5 MHz, BW 4.096 MHz
25 (15 Channels)
η
G
ps
−10
ACPR, ADJACENT CHANNEL POWER RATIO (dB)
IMD, INTERMODULATION DISTORTION (dBc)
−20
20
−30
15
−40
10
ACPR
−50
−60
3.5
5
0.5
1.5
2
2.5
3
P
out
, OUTPUT POWER (WATTS Avg.) W−CDMA
1
Freescale Semiconductor, Inc...
Figure 4. Class AB Broadband Circuit Performance
Figure 5. W - CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
−25
−30
−35
−40
−45
−50
−55
−60
0.1
1
130 mA
80 mA
100 mA
150 mA
V
DD
= 28 Vdc, f = 2140 MHz
Two Tone Measurement,
100 kHz Tone Spacing
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
0.1
1
10
100
7th Order
5th Order
V
DD
= 28 Vdc, I
DQ
= 100 mA, f = 2140 MHz
Two Tone Measurement, 100 kHz Tone Spacing
3rd Order
10
100
P
out
, OUTPUT POWER (WATTS) PEP
P
out
, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion versus
Output Power
Figure 7. Intermodulation Distortion Products
versus Output Power
14.5
V
DD
= 28 Vdc, f = 2140 MHz
Two Tone Measurement, 100 kHz Tone Spacing
14.0
G ps , POWER GAIN (dB)
150 mA
13.5
130 mA
100 mA
13.0
80 mA
G ps , POWER GAIN (dB)
15
P
out
= 10 W (PEP), I
DQ
= 100 mA, f = 2140 MHz
Two Tone Measurement, 100 kHz Tone Spacing
−30
−32
−34
G
ps
−36
−38
IMD
−40
14
13
12.5
12.0
0.1
1
10
100
12
22
P
out
, OUTPUT POWER (WATTS) PEP
26
28
30
V
DD
, DRAIN VOLTAGE (VOLTS)
−42
32
Figure 8. Power Gain versus Output Power
Figure 9. Intermodulation and Gain versus Supply
Voltage
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF21010LR1 MRF21010LSR1
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
