MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF422/D
NPN Silicon
RF Power Transistor
Designed primarily for applications as a high–power linear amplifier from 2.0
to 30 MHz.
•
Specified 28 Volt, 30 MHz Characteristics —
Output Power = 150 W (PEP)
Minimum Gain = 10 dB
Efficiency = 40%
•
Intermodulation Distortion @ 150 W (PEP) —
IMD = – 30 dB (Min)
•
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
MRF422
150 W (PEP), 30 MHz
RF POWER
TRANSISTORS
NPN SILICON
CASE 211–11, STYLE 1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Withstanding Current — 10 s
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
—
PD
Tstg
Value
40
85
3.0
20
30
290
1.66
– 65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.6
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0)
Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current (VCE = 28 Vdc, VBE = 0, TC = 25°C)
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICES
35
85
85
3.0
—
—
—
—
—
—
—
—
—
—
20
Vdc
Vdc
Vdc
Vdc
mAdc
(continued)
REV 6
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF422
1
ELECTRICAL CHARACTERISTICS — continued
(TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 Adc, VCE = 5.0 Vdc)
hFE
15
30
120
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
420
—
pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 28 Vdc, Pout = 150 W (PEP), IC(max) = 6.7 Adc,
ICQ = 150 mAdc, f = 30, 30.001 MHz)
Collector Efficiency
(VCC = 28 Vdc, Pout = 150 W (PEP), IC(max) = 6.7 Adc,
ICQ = 150 mAdc, f = 30, 30.001 MHz)
Intermodulation Distortion (1)
(VCE = 28 Vdc, Pout = 150 W (PEP), IC = 6.7 Adc,
ICQ = 150 mAdc, f = 30, 30.001 MHz)
Output Power
(VCE = 28 Vdc, f = 30 MHz)
GPE
10
13
—
dB
η
—
45
—
%
IMD
—
– 33
– 30
dB
Pout
150
—
—
Watts
(PEP)
NOTE:
1. To Mil–Std–1311 Version A, Test Method 2204, Two Tone, Reference each Tone.
R1
+
BIAS
–
CR1
L5
C6
C7
L2
L3
L4
C2
L1
D.U.T.
C4
–
C8
C9
C10
C11
+
28 Vdc
C1
R2
C3
C5
C1, C2, C3, C5 — 170– 680 pF, ARCO 469
C4 — 80 – 480 pF, ARCO 466
C6, C8, C11 — ERIE 0.1
µF,
100 V
C7 — MALLORY 500
µF,
15 V Electrolytic
C9 — UNDERWOOD 1000 pF, 350 V
C10 — 10
µF,
50 V Electrolytic
R1 — 10
Ω,
25 Watt Wire Wound
R2 — 10
Ω,
1.0 Watt Carbon
CR1 — 1N4997
L1 — 3 Turns, #16 Wire, 5/16″ I.D., 5/16″ Long
L2 — 10
µH
Molded Choke
L3 — 12 Turns, #16 Enameled Wire, Close Wound, 1/4″ Dia.
L4 — 5 Turns, 1/8″ Copper Tubing
L5 — 10 Ferrite Beads — FERROXCUBE #56–590–65/3B
Figure 1. 30 MHz Test Circuit Schematic
MRF422
2
MOTOROLA RF DEVICE DATA
280
Pout , OUTPUT POWER (WATTS PEP)
240
200
160
120
80
40
0
0
2
4
6
8
10
Pin, INPUT POWER (WATTS PEP)
12
14
VCC = 28 V
ICQ = 150 mA
TWO TONE TEST:
f = 30, 30.001 MHz
25
G PE , POWER GAIN (dB)
20
15
10
VCC = 28 V
ICQ = 150 mA
Pout = 150 W PEP
5
0
1.5
2
3
5
7
10
f, FREQUENCY (MHz)
15
20
30
Figure 2. Output Power versus Input Power
Figure 3. Power Gain versus Frequency
Pout , OUTPUT POWER (WATTS PEP)
240
200
160
120
80
40
0
16
IMD = 30 dB
ICQ = 25 mA
f = 30, 30.001 MHz
IMD, INTERMODULATION DISTORTION (dB)
280
–10
VCC = 28 V
ICQ = 150 mA
f = 30, 30.001 MHz
– 20
– 30
3RD ORDER
– 40
5TH ORDER
– 50
20
24
28
VCC, SUPPLY VOLTAGE (VOLTS)
32
0
40
80
120
160
Pout, OUTPUT POWER (WATTS PEP)
200
Figure 4. Linear Output Power versus
Supply Voltage
Figure 5. Intermodulation Distortion
versus Output Power
40
IC, COLLECTOR CURRENT (AMP)
20
TC = 25°C
8
15
4
2
7
30
VCC = 28 V
ICQ = 150 mA
Pout = 150 W PEP
FREQUENCY
MHz
2
7
15
30
Zin
Ohms
4.90 – j1.54
2.10 – j0.93
1.32 – j0.38
0.81 – j0.26
0.8
0.4
f = 2 MHz
1
2
5
10
20
50
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
100
Figure 6. DC Safe Operating Area
Figure 7. Series Input Impedance
MOTOROLA RF DEVICE DATA
MRF422
3
5
Rout , PARALLEL EQUIVALENT OUTPUT
RESISTANCE (OHMS)
Cout , PARALLEL EQUIVALENT OUTPUT
CAPACITANCE (pF)
10
4
8
3
6
2
VCC = 28 V
ICQ = 150 mA
Pout = 150 W PEP
2
3
5
7
10
f, FREQUENCY (MHz)
15
20
30
4
VCC = 28 V
ICQ = 150 mA
Pout = 150 W PEP
2
3
5
7
10
f, FREQUENCY (MHz)
15
20
30
1
2
0
1.5
0
1.5
Figure 8. Output Resistance versus Frequency
Figure 9. Output Capacitance versus Frequency
PACKAGE DIMENSIONS
A
U
M
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Q
M
4
R
B
2
3
D
K
J
H
C
E
SEATING
PLANE
DIM
A
B
C
D
E
H
J
K
M
Q
R
U
STYLE 1:
PIN 1.
2.
3.
4.
INCHES
MIN
MAX
0.960
0.990
0.465
0.510
0.229
0.275
0.216
0.235
0.084
0.110
0.144
0.178
0.003
0.007
0.435
–––
45
_
NOM
0.115
0.130
0.246
0.255
0.720
0.730
MILLIMETERS
MIN
MAX
24.39
25.14
11.82
12.95
5.82
6.98
5.49
5.96
2.14
2.79
3.66
4.52
0.08
0.17
11.05
–––
45
_
NOM
2.93
3.30
6.25
6.47
18.29
18.54
EMITTER
BASE
EMITTER
COLLECTOR
CASE 211–11
ISSUE N
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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MRF422
4
◊
*MRF422/D*
MRF422/D
MOTOROLA RF DEVICE DATA
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