MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
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by MRF464/D
NPN Silicon
RF Power Transistor
. . . designed primarily for applications as a high–power linear amplifier from 2.0
to 30 MHz, in single sideband mobile, marine and base station equipment.
•
Specified 28 Volt, 30 MHz Characteristics —
Output Power = 80 W (PEP)
Minimum Gain = 15 dB
Efficiency = 40%
Intermodulation Distortion = –32 dB (Max)
MATCHING PROCEDURE
In the push–pull circuit configuration it is preferred that the transistors are
used as matched pairs to obtain optimum performance.
The matching procedure used by Motorola consists of measuring hFE at the
data sheet conditions and color coding the device to predetermined hFE ranges
within the normal hFE limits. A color dot is added to the marking on top of the
cap. Any two devices with the same color dot can be paired together to form a
matched set of units.
MRF464
80 W (PEP), 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
Characteristic
Thermal Resistance, Junction to Case
Stud Torque (1)
Value
35
65
4.0
10
250
1.4
– 65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
Symbol
R
θJC
—
Max
0.7
8.5
Unit
°C/W
In. Lb.
CASE 211–11, STYLE 1
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 100 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage
(IE = 1.0 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 28 Vdc, VBE = 0, TC = + 55°C)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
35
65
4.0
—
—
—
—
10
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.5 Adc, VCE = 5.0 Vdc)
NOTE:
1. Case 145A–10 — For Repeated Assembly Use 11 In. Lb.
hFE
10
—
—
(continued)
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF464
1
ELECTRICAL CHARACTERISTICS — continued
(TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
200
pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain (Figure 1)
(Pout = 80 W (PEP), IC = 3.6 Adc (Max), VCC = 28 Vdc,
f1 = 30 MHz, f2 = 30.001 MHz)
Intermodulation Distortion Ratio (Figure 1) (2)
(Pout = 80 W (PEP), IC = 3.6 Adc (Max), VCC = 28 Vdc,
f1 = 30 MHz, f2 = 30.001 MHz)
GPE
15
—
dB
IMD
—
– 32
dB
Collector Efficiency
η
(Pout = 80 W (PEP), IC = 3.6 Adc (Max), VCC = 28 Vdc,
f1 = 30 MHz, f2 = 30.001 MHz)
NOTE:
2. To Mil–Std–1311 Version A, Test Method 2204B, Two Tone, Reference each Tone.
VBB
RF BEADS
40
—
%
+
500
µF
1N248B
0.01
µF
10
µH
RFC
RFC
RL = 50
Ω
0.1
µF
DUT
ARCO 466
(80 – 480 pF)
ARCO 469
(170 – 780 pF)
T1
C.T.
10
1/2 W
T2
(1:9)
C2
C1
2000 pF
BUTTON
0.01
µF
25
µF
28 Vdc
–
RFC — 20 Turns @12 AWG Enameled Wire Close Wound in 2 Layers, 1/4″ I.D.
T1 — 20 Turns #24 AWG Wire Wound on Micro–Metals T37–7 Toroid Core
T1 —
Center Tapped.
T2 — 1:9 XFMR; 6 Turns of 2 Twisted Pairs of #28 AWG Enameled Wire.
T2 —
(8 Crests Per Inch) Bifilar Wound on Each of 2 Separate Balun Cores.
T2 —
(Stackpole #57–1503, No. 14 Material) Interconnected as shown
T2 —
RF Beads — Ferroxcube #56–590–65/3B
VBB adjusted for ICQ — 40 mAdc (ICQ = Quiescent
VBB adjusted for ICQ — 40 mAdc
Collector Current)
C1 — 170 – 180 pF ARCO 469 or Equivalent
C2 — 330 pF
Figure 1. 30 MHz Test Circuit
MRF464
2
MOTOROLA RF DEVICE DATA
120
Pout , OUTPUT POWER (WATTS)
100
80
60
40
20
0
VCC = 28 Vdc
IGQ = 40 mA
f = 30 MHz
50
G PE , POWER GAIN (dB)
40
30
20
VCC = 28 Vdc
ICQ = 40 mA
Pout = 80 W PEP
2
3
5
7
10
15
20
30
10
0
1.5
0
0.2 0.4 0.6 0.8
1 1.2 1.4 1.6 1.8
2
2.2 2.4 2.6 2.8
Pin, INPUT POWER (WATTS)
f, FREQUENCY (MHz)
Figure 2. Output Power versus Input Power
Figure 3. Power Gain versus Frequency
Pout , OUTPUT POWER (WATTS PEP)
120
100
80
60
40
20
0
16
ICQ = 40 mA
f = 30, 30.001 MHz
IMD, INTERMODULATION DISTORTION (dB)
140
–10
VCC = 28 Vdc
ICQ = 40 mA
f = 30, 30.001 MHz
– 20
– 30
3RD ORDER
– 40
5TH ORDER
3RD ORDER
IMD = – 30 dB
– 50
– 60
0
20
40
60
20
24
28
32
80
100
120
140
VCC, SUPPLY VOLTAGE (VOLTS)
Pout, OUTPUT POWER (WATTS PEP)
Figure 4. Output Power versus Supply Voltage
Figure 5. Intermodulation Distortion versus
Output Power
2500
Cout , PARALLEL EQUIVALENT OUTPUT
CAPACITANCE (pF)
Rout , PARALLEL EQUIVALENT OUTPUT
RESISTANCE (OHMS)
10
2000
8
1500
6
1000
VCC = 28 Vdc
ICQ = 40 mA
Pout = 80 W PEP
2
3
5
7
10
15
20
30
4
VCC = 28 Vdc
ICQ = 40 mA
Pout = 80 W (PEP)
2
3
5
7
10
15
20
30
500
2
0
1.5
1.5
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 6. Output Capacitance versus Frequency
Figure 7. Output Resistance versus Frequency
MOTOROLA RF DEVICE DATA
MRF464
3
10
IC, COLLECTOR CURRENT (AMPS)
8
6
4
2
0
0
5
10
15
20
25
30
35
40
VCC, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 8. DC Safe Operating Area
1.0
2.0
3.0
0
1.0
30
4.0
2.0
VCC = 28 Vdc
ICQ = 40 mA
Pout = 80 W PEP
FREQUENCY
MHz
2.0
7.0
15
30
Zin
Ohms
9.0 – j5.40
3.3 – j1.50
2.8 – j1.10
1.4 – j0.30
15
7.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
2.0
2.0
12
f = 2.0 MHz
6.0
4.0
Figure 9. Series Input Impedance
MRF464
4
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
A
U
M
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Q
M
4
R
B
2
3
D
K
J
H
C
E
SEATING
PLANE
DIM
A
B
C
D
E
H
J
K
M
Q
R
U
STYLE 1:
PIN 1.
2.
3.
4.
INCHES
MIN
MAX
0.960
0.990
0.465
0.510
0.229
0.275
0.216
0.235
0.084
0.110
0.144
0.178
0.003
0.007
0.435
–––
45
_
NOM
0.115
0.130
0.246
0.255
0.720
0.730
MILLIMETERS
MIN
MAX
24.39
25.14
11.82
12.95
5.82
6.98
5.49
5.96
2.14
2.79
3.66
4.52
0.08
0.17
11.05
–––
45
_
NOM
2.93
3.30
6.25
6.47
18.29
18.54
EMITTER
BASE
EMITTER
COLLECTOR
CASE 211–11
ISSUE N
MOTOROLA RF DEVICE DATA
MRF464
5
模拟与混合信号
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