MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF5P21180/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
Designed for W–CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
•
Typical 2–carrier W–CDMA Performance for V
DD
= 28 Volts,
I
DQ
= 2 x 800 mA, f1 = 2135 MHz, f2 = 2145 MHz,
Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over
3.84 MHz BW @ f1 – 5 MHz and f2 + 5 MHz. Distortion Products
Measured over a 3.84 MHz BW @ f1 – 10 MHz and f2 + 10 MHz,
Each Carrier Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Output Power — 38 Watts Avg.
Power Gain — 14 dB
Efficiency — 25.5%
IM3 — 37.5 dBc
ACPR — –41 dBc
•
Internally Matched, Controlled Q, for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 180 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
•
Qualified Up to a Maximum of 32 V
DD
Operation
MRF5P21180
2170 MHz, 180 W AVG.,
2 x W–CDMA, 28 V
LATERAL N–CHANNEL
RF POWER MOSFET
CASE 375D–04, STYLE 1
NI–1230
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
–0.5, +15
437.5
2.5
–65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 0
MOTOROLA RF
Motorola, Inc. 2002
DEVICE DATA
MRF5P21180
1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 180 W CW
Case Temperature 80°C, 38 W CW
Symbol
R
θJC
0.40
0.40
Max
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0)
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(1)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
µAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 800 mAdc)
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
DYNAMIC CHARACTERISTICS
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
1.7
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2.5
—
—
—
2.8
3.6
0.26
5
3.5
—
0.3
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
µAdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system) (2) 2–carrier W–CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and
IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Common–Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 38 W Avg., I
DQ
= 2 x 800 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 38 W Avg., I
DQ
= 2 x 800 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
Third Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 38 W Avg., I
DQ
= 2 x 800 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW @ f1 –10 MHz
and f2 +10 MHz referenced to carrier channel power.)
Adjacent Channel Power Ratio
(V
DD
= 28 Vdc, P
out
= 38 W Avg., I
DQ
= 2 x 800 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz; ACPR measured over 3.84 MHz BW @ f1 – 5 MHz
and f2 +5 MHz.)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 38 W Avg., I
DQ
= 2 x 800 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
G
ps
12.5
14
—
dB
η
23
25.5
—
%
IM3
—
–37.5
–35
dBc
ACPR
—
–41
–38
dBc
IRL
—
–14
–9
dB
(1) Each side of device measured separately. Part is internally matched both on input and output.
(2) Measurements made with device in push–pull configuration.
MRF5P21180
2
MOTOROLA RF DEVICE DATA
V
GG
R1
+
C23
C13
R2
Z15
C11
C5
Z11
Z3
Z5
C1
Z7
Z9
DUT
Z4
C2
Z6
Z8
Z10
Z14
Z18
C3
Z16
+
C24
C14
C12
C6
C7
Z13
C8
+
C9
C16
+
C18
+
C19
+ V
DD
C20
Z17
C4
Z19
RF
INPUT
Z1
Z2
Z21
Z22
RF
OUTPUT
V
GG
R4
R5
R3
Z12
Z20
+
C10
C15
+
C17
+
C21
+ V
DD
C22
Z1, Z22
Z2, Z21
Z3, Z20
Z4, Z19
Z5, Z6
Z7, Z8
1.000″ x 0.066″ Microstrip
0.760″ x 0.113″ Microstrip
0.068″ x 0.066″ Microstrip
1.672″ x 0.066″ Microstrip
0.318″ x 0.066″ Microstrip
0.284″ x 0.180″ Microstrip
Z9, Z10
Z11, Z12
Z13, Z14
Z15, Z16
Z17, Z18
PCB
0.256″ x 0.650″ Microstrip
1.030″ x 0.035″ Microstrip
0.500″ x 0.650″ Microstrip
0.550″ x 0.058″ Microstrip
0.353″ x 0.066″ Microstrip
Taconic RF–35, 0.76 mm,
ε
r
= 3.5
Figure 1. MRF5P21180 Test Circuit Schematic
Table 1. MRF5P21180 Test Circuit Component Designations and Values
Part
C1, C2, C3, C4
C5, C6, C7, C8
C9, C10
C11, C12
C13, C14, C15, C16
C17, C18, C19, C20,
C21, C22
C23, C24
R1, R2, R3, R4
R5
WB1, WB2, WB3, WB4
Description
30 pF Chip Capacitors
5.6 pF Chip Capacitors
10
µF
Tantalum Capacitors
1000 pF Chip Capacitors
0.1
µF
Chip Capacitors
22
µF
Tantalum Capacitors
1.0
µF
Tantalum Capacitors
10
W,
1/8 W Chip Resistors
1.0 kW, 1/8 W Chip Resistor
Wear Blocks
5 x 180 x 500 mil Brass Shim
Motorola
Value, P/N or DWG
100B300JCA500X
100B5R6JCA500X
T495X106K035AS4394
100B102JCA500X
CDR33BX104AKWS
T491X226K035AS4394
T491C105M050
ATC
ATC
Kemet
ATC
Kemet
Kemet
Kemet
Manufacturer
MOTOROLA RF DEVICE DATA
MRF5P21180
3
C23
V
GG
R1
C13 C11
R2
C5
C8
C9
C16 C18 C19
V
DD
C20
C1
CUT OUT AREA
WB1
WB2
C2
WB3
WB4
C3
C22
C7
R5
R4 C24
R3
C14 C12
C6
C15 C17 C21
C10
C4
MRF5P21180
Rev 5
Figure 2. MRF5P21180 Test Circuit Component Layout
MRF5P21180
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
η
, DRAIN
EFFICIENCY (%)
IM3 (dBc), ACPR (dBc)
-10
-15
-20
-25
-30
-35
1200 mA
1600 mA
20
40
60
80 100
200
300
IRL, INPUT RETURN LOSS (dB)
15
14
13
G ps , POWER GAIN (dB)
12
11
10
9
8
7
6
5
2080
IM3
ACPR
2100
2120
2140
2160
2180
IRL
G
ps
η
V
DD
= 28 Vdc, P
out
= 38 W (Avg.), I
DQ
= 1600 mA
2-Carrier W-CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
40
35
30
25
20
-20
-25
-30
-35
-40
-45
2200
f, FREQUENCY (MHz)
Figure 3. 2–Carrier W–CDMA Broadband Performance
15
I
DQ
= 2400 mA
G ps , POWER GAIN (dB)
14.5
14
13.5
13
12.5
2000 mA
IM3, THIRD ORDER
1600 mA
1200 mA
800 mA
V
DD
= 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurement, 10 MHz Tone Spacing
20
40
60
80
100
200
300
P
out
, OUTPUT POWER (WATTS) PEP
INTERMODULATION DISTORTION (dBc)
-20
-25
-30
-35
-40
-45
-50
V
DD
= 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurement, 10 MHz Tone Spacing
I
DQ
= 800 mA
2400 mA
2000 mA
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Two–Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation Distortion
versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
-20
-25
Pout , OUTPUT POWER (dBm)
-30
-35
-40
-45
-50
-55
-60
0.1
V
DD
= 28 Vdc, P
out
= 170 W (PEP), I
DQ
= 1600 mA
Two-Tone Measurements, Center Frequency = 2140 MHz
1
TWO-TONE SPACING (MHz)
10
20 30
5th Order
7th Order
3rd Order
58
56
54
52
50
48
46
44
42
30
32
34
V
DD
= 28 Vdc, I
DQ
= 1600 mA
Pulsed CW, 5
µsec
(on), 1 msec (off)
Center Frequency = 2140 MHz
36
38
40
42
P
in
, INPUT POWER (dBm)
Ideal
P3dB = 53.72 dBm (236 W)
P1dB = 52.99 dBm (199 W)
Actual
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MOTOROLA RF DEVICE DATA
MRF5P21180
5
模拟与混合信号
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