Freescale Semiconductor
Technical Data
MRF5S21100H
Rev. 2, 1/2005
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
•
Typical 2 - carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
= 1050 mA,
P
out
= 23 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 13.5 dB
Drain Efficiency — 26%
IM3 @ 10 MHz Offset — - 37 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 40 dBc @ 3.84 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW
Output Power
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched, Controlled Q, for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Lower Thermal Resistance Package
•
Low Gold Plating Thickness on Leads, 40
µ″
Nominal.
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF5S21100HR3
MRF5S21100HSR3
2170 MHz, 23 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF5S21100HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF5S21100HSR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
- 0.5, +65
- 0.5, +15
273
1.56
- 65 to +150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 78°C, 23 W CW
Symbol
R
θJC
0.57
0.64
Value
(1,2)
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRF5S21100HR3 MRF5S21100HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
2 (Minimum)
M3 (Minimum)
C7 (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics (DC)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 250
µAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1050 mAdc)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2.5 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2.5 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
2.14
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2.5
—
—
—
2.8
3.8
0.24
6
3.5
—
0.3
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
0.5
µAdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1050 mA, P
out
= 23 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @
±5
MHz Offset. IM3 measured in 3.84 MHz Bandwidth @
±10
MHz Offset. Peak/Avg. = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
G
ps
η
D
IM3
ACPR
IRL
12.5
24
—
—
—
13.5
26
- 37
- 40
- 16
—
—
- 35
- 38
-9
dB
%
dBc
dBc
dB
MRF5S21100HR3 MRF5S21100HSR3
2
RF Device Data
Freescale Semiconductor
R4
R1
V
BIAS
+
C12
R2
C4
R3
Z7
RF
INPUT
Z1
Z2
C13
Z3
C14 C1
DUT
Z4
Z5
Z6
B1
C9
C3
Z8
Z9
Z10 Z11 Z12 Z13 Z14
C2
Z15
C15
Z16
Z17
RF
OUTPUT
C10
+
C11
V
SUPPLY
C5
C6
W1
C7
C8
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.674″ x 0.080″ Microstrip
0.421″ x 0.080″ Microstrip
0.140″ x 0.080″ Microstrip
1.031″ x 0.080″ Microstrip
0.380″ x 0.643″ Microstrip
0.080″ x 0.643″ Microstrip
0.927″ x 0.048″ Microstrip
0.620″ x 0.048″ Microstrip
0.079″ x 1.136″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
Z17
PCB
0.368″ x 1.136″ Microstrip
0.151″ x 0.393″ Microstrip
0.280″ x 0.220″ Microstrip
0.481″ x 0.142″ Microstrip
0.138″ x 0.080″ Microstrip
0.344″ x 0.080″ Microstrip
0.147″ x 0.099″ Microstrip
0.859″ x 0.080″ Microstrip
Arlon GX - 0300- SS - 22, 0.030″,
ε
r
= 2.55
Figure 1. MRF5S21100HR3(SR3) Test Circuit Schematic
Table 5. MRF5S21100HR3(SR3) Test Circuit Component Designations and Values
Part
B1
C1, C2
C3
C4
C5, C7
C6
C8
C9, C10
C11
C12
C13
C14
C15
R1
R2
R3, R4
Short RF Bead
8.2 pF Chip Capacitors
5.6 pF Chip Capacitor
0.1
µF
Chip Capacitor
7.5 pF Chip Capacitors
1.2 pF Chip Capacitor
1K pF Chip Capacitor
0.56
µF
Chip Capacitors
470
µF,
63 V Electrolytic Capacitor
100
µF,
50 V Electrolytic Capacitor
0.6- 4.5 pF Gigatrim Variable Capacitor
2.7 pF Chip Capacitor
0.4- 2.5 pF Gigatrim Variable Capacitor
1 kW Chip Resistor
560 kW Chip Resistor
12
W
Chip Resistors
Description
95F786
100B8R2CP500X
100B5R6CP500X
C1210C104J5RAC
100B7R5JP500X
100B1R2BP500X
100B102JP500X
C1825C564J5RAC
95F4579
51F2913
44F3358
100B2R7CP500X
44F3367
D5534M07B1K00R
CR1206564JT
RM73B2B120JT
Part Number
Manufacturer
Newark
ATC
ATC
Kemet
ATC
ATC
ATC
Kemet
Newark
Newark
Newark
ATC
Newark
Newark
Newark
Garrett Electronics
MRF5S21100HR3 MRF5S21100HSR3
RF Device Data
Freescale Semiconductor
3
C12
VGG
C9
R1
B1
R2
R3
C4
C3
C10
C5 C6
R4
C11
VDD
W1
C7 C8
C1
CUT OUT AREA
C2
C13
C14
C15
MRF5S21100L
Rev 03
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF5S21100HR3(SR3) Test Circuit Component Layout
MRF5S21100HR3 MRF5S21100HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
15
14
13
G ps , POWER GAIN (dB)
12
11
10
9
8
7
6
5
ACPR
IM3
IRL
η
D
V
DD
= 28 Vdc, P
out
= 23 W (Avg.), I
DQ
= 1050 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
G
ps
40
35
30
25
20
−20
−25
−30
−35
−40
IM3 (dBc), ACPR (dBc)
η
D
, DRAIN
EFFICIENCY (%)
0
−10
−20
−30
−40
−50
−45
2040 2060 2080 2100 2120 2140 2160 2180 2200 2220 2240
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance
16
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−15
−20
−25
−30
−35
−40
−45
−50
650 mA
−55
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
850 mA
1050 mA
1250 mA
I
DQ
= 1400 mA
V
DD
= 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
15
G ps , POWER GAIN (dB)
I
DQ
= 1400 mA
1250 mA
14
1050 mA
850 mA
13
650 mA
12
V
DD
= 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
11
Figure 4. Two - Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation Distortion
versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
−20
−25
−30
−35
−40
5th Order
−45
−50
−55
−60
0.1
V
DD
= 28 Vdc, P
out
= 100 W (PEP), I
DQ
= 1050 mA
Two−Tone Measurements, Center Frequency = 2140 MHz
1
TWO−TONE SPACING (MHz)
10
7th Order
3rd Order
Pout , OUTPUT POWER (dBm)
56
55
P3dB = 51.88 dBm (154.17 W)
54
53
52
51
50
49
48
34
35
36
37
V
DD
= 28 Vdc, I
DQ
= 1050 mA
Pulsed CW, 8µsec(on), 1msec(off)
Center Frequency = 2140 MHz
38
39
40
41
42
P1dB = 51.18 dBm (131.22 W)
Actual
Ideal
P
in
, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MRF5S21100HR3 MRF5S21100HSR3
RF Device Data
Freescale Semiconductor
5
IRL, INPUT RETURN LOSS (dB)
DSP 与 ARM 处理器
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
