MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
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by MRF6409/D
NPN Silicon
RF Power Transistor
The MRF6409 is designed for GSM base stations applications. It incorpo-
rates high value emitter ballast resistors, gold metallizations and offers a high
degree of reliability and ruggedness.
•
To be used in Class AB
•
Specified 26 Volts, 960 MHz Characteristics
Output Power — 20 Watts CW
Gain — 11 dB Typ
Efficiency — 60% Typ
MRF6409
20 W, 960 MHz
RF POWER TRANSISTOR
NPN SILICON
CASE 319–07, STYLE 2
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector–Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
VCEO
VCES
VEBO
IC
PD
Tstg
TJ
Characteristic
Thermal Resistance, Junction to Case (1)
Symbol
R
θJC
Symbol
Min
Typ
Value
24
55
4.0
5.0
45
0.26
– 65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Max
3.8
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
Emitter–Base Breakdown Voltage
(IB = 5.0 mAdc, IC =0)
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0)
V(BR)CEO
V(BR)EBO
V(BR)CES
24
4.0
55
—
30
5.0
60
—
—
—
—
6.0
Vdc
Vdc
Vdc
mA
Collector–Cutoff Current
ICES
(VCE = 30 Vdc, VBE = 0)
(1) Thermal resistance is determined under specified RF operating condition.
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF6409
1
ELECTRICAL CHARACTERISTICS — continued
(TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(ICE = 1.0 Adc, VCE = 5.0 Vdc)
hFE
20
35
80
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 26 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
18
—
pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 26 Vdc, Pout = 20 W (CW), ICQ = 50 mA, f = 960 MHz)
Collector Efficiency
(VCC = 26 Vdc, Pout = 20 W (CW), ICQ = 50 mA, f = 960 MHz)
Load Mismatch
(VCC = 26 Vdc, Pout = 15 W (CW), ICQ = 50 mA, f = 960 MHz,
Load VSWR = 3:1, All Phase Angles at Frequency of Test)
Gpe
η
Ψ
No Degradation in Output Power
10
50
11
60
—
—
dB
%
T1
+
C8
C7
C6
–
R2
D2
D1
C9
R1
C3
B1
RF INPUT
C1
D.U.T.
C2
C4
C5
RF OUTPUT
R3
P1
B2
C10
C11
+
26 V
–
5.0 V
B1, B2
C1
C2, C3
C4
C5
C6, C9
C7, C10
C8
Ferrite Bead
3.3 pF, Chip Capacitor, High Q
4.7 pF, Chip Capacitor, High Q
2.2 pF, Chip Capacitor, High Q
82 pF, Chip Capacitor, High Q
330 pF, Chip Capacitor, High Q
0.1
µF,
Chip Capacitor
22
µF,
16 V, Tantalum Capacitor
C11
D1, D2
P1
R1
R2
R3
T1
Board
4.7
µF,
50 V, Tantalum Capacitor
Diode BAS16 Type or Equivalent
1.0 kΩ, Trimmer
3.3
Ω,
Chip Resistor
68
Ω,
Chip Resistor
2.2 kΩ, Resistor
NPN Transistor
Glass Teflon
®
,
ε
r = 2.55, H = 1/50 inch
Figure 1. Test Circuit Electrical Schematic
MRF6409
2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
30
Pout , OUTPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
25
20
15
10
5.0
0
0
VCE = 26 V
IQ = 50 mA
f = 960 MHz
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
25
24
23
22
21
20
19
18
17
16
15
920
930
940
950
VCE = 26 V
IQ = 50 mA
Pin = 1 W
960
970
Pin, INPUT POWER (WATTS)
f, FREQUENCY (MHz)
Figure 2. Output Power versus Input Power (CW)
Figure 3. Output Power versus Frequency (CW)
30
P , OUTPUT POWER (WATTS)
out
P , OUTPUT POWER (WATTS)
out
25
20
15
10
5.0
0
IQ = 50 mA
f = 960 MHz
Pin = 1, 6 W
18
20
22
24
26
13
12
11
10
9.0
8.0
7.0
0
IQ = 50 mA
f = 960 MHz
5.0
10
15
20
25
30
70%
60%
50%
40%
30%
20%
10%
35
η
, COLLECTOR EFFICIENCY (%)
VCE, SUPPLY VOLTAGE (VOLTS)
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Power versus Supply Voltage (CW)
Figure 5. Power Gain and Efficiency
versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
13
12.5
Gp , POWER GAIN (dB)
12
11.5
11
10.5
10
9.5
9.0
910
920
930
940
950
VCE = 26 V
IQ = 50 mA
960
65%
η
, COLLECTOR EFFICIENCY (%)
0
–10
–20
–30
–40
–50
–60
VCE = 26 V
ICQ = 50 mA
f1 = 960 MHz
f2 = 960, 1 MHz
60%
55%
50%
45%
970
0.1
1.0
Pout, OUTPUT POWER (WATTS) PEP
10
f, FREQUENCY (MHz)
Figure 6. Typical Broadband Performances
Figure 7. Intermodulation Distortion
versus Output Power
MOTOROLA RF DEVICE DATA
MRF6409
3
f = 980 MHz
Zin
920
Zo = 10
Ω
920
ZOL*
f = 980 MHz
f
(MHz)
920
940
960
980
Zin
(Ω)
1.4 + j3.0
1.5 + j3.9
1.5 + j4.2
1.6 + j4.4
ZOL*
(Ω)
3.2 – j2.5
3.5 – j1.88
3.9 – j2.5
4.0 – j2.8
ZOL*: Conjugate of optimum load impedance
into which the device operates at a
given output power, voltage, current
and frequency.
Figure 8. Input and Output Impedances with Circuit Tuned for Maximum Gain
@ VCC = 26 V, ICQ = 50 mA, Pout = 20 W (CW)
MRF6409
4
MOTOROLA RF DEVICE DATA
Figure 9. 960 MHz Test Circuit RF, Photomaster Scale 1:1
(Reduced 25% in printed data book, DL110/D)
C8
C6
C7
B
R2
R1
C3
B1
C1
C2
C4
C5
B2
C9
C10
C11
Figure 10. 960 MHz Test Circuit RF, Photomaster Scale 1:1
and Components Location
(Reduced 25% in printed data book, DL110/D)
MOTOROLA RF DEVICE DATA
MRF6409
5
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