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MRF652S

产品描述RF POWER TRANSISTORS NPN SILICON
产品类别分立半导体    晶体管   
文件大小114KB,共4页
制造商Motorola ( NXP )
官网地址https://www.nxp.com
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MRF652S概述

RF POWER TRANSISTORS NPN SILICON

MRF652S规格参数

参数名称属性值
厂商名称Motorola ( NXP )
包装说明DISK BUTTON, O-CRDB-F4
针数4
制造商包装代码CASE 249-06
Reach Compliance Codeunknow
ECCN代码EAR99
最大集电极电流 (IC)2 A
基于收集器的最大容量15 pF
集电极-发射极最大电压16 V
配置SINGLE
最小直流电流增益 (hFE)10
最高频带ULTRA HIGH FREQUENCY BAND
JESD-30 代码O-CRDB-F4
元件数量1
端子数量4
最高工作温度200 °C
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装形状ROUND
封装形式DISK BUTTON
极性/信道类型NPN
功耗环境最大值25 W
最小功率增益 (Gp)10 dB
认证状态Not Qualified
表面贴装YES
端子形式FLAT
端子位置RADIAL
晶体管应用AMPLIFIER
晶体管元件材料SILICON

文档预览

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MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF652/D
NPN Silicon
RF Power Transistors
Designed for 12.5 Vdc UHF large–signal, amplifier applications in industrial
and commercial FM equipment operating to 512 MHz.
Guaranteed 12.5 Volt, 512 MHz Characteristics
Output Power = 5.0 Watts
Minimum Gain = 10 dB
Efficiency = 65% (Typ)
Typical Performance at 512 MHz, 12.5 V, 5.0 W Output = 6.0 dB
Series Equivalent Large–Signal Characterization
Gold Metallized, Emitter Ballasted for Long Life and Reliability
Capable of 30:1 VSWR Load Mismatch at 15.5 V Supply Voltage
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
Value
16
36
4.0
2.0
25
143
– 65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
°C
°C
MRF652
MRF652S
5.0 W, 512 MHz
RF POWER
TRANSISTORS
NPN SILICON
CASE 244–04, STYLE 1
MRF652
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
7.0
Unit
°C/W
CASE 249–06, STYLE 1
MRF652S
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0)
Collector–Base Breakdown Voltage
(IC = 25 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0)
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICES
16
36
36
4.0
1.0
Vdc
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 200 mAdc, VCE = 5.0 Vdc)
hFE
10
150
(continued)
REV 7
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1995
MRF652 MRF652S
1

MRF652S相似产品对比

MRF652S MRF652
描述 RF POWER TRANSISTORS NPN SILICON RF POWER TRANSISTORS NPN SILICON
厂商名称 Motorola ( NXP ) Motorola ( NXP )
包装说明 DISK BUTTON, O-CRDB-F4 POST/STUD MOUNT, O-CRPM-F4
Reach Compliance Code unknow unknow
ECCN代码 EAR99 EAR99
最大集电极电流 (IC) 2 A 2 A
基于收集器的最大容量 15 pF 15 pF
集电极-发射极最大电压 16 V 16 V
配置 SINGLE SINGLE
最小直流电流增益 (hFE) 10 10
最高频带 ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 代码 O-CRDB-F4 O-CRPM-F4
元件数量 1 1
端子数量 4 4
最高工作温度 200 °C 200 °C
封装主体材料 CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
封装形状 ROUND ROUND
封装形式 DISK BUTTON POST/STUD MOUNT
极性/信道类型 NPN NPN
功耗环境最大值 25 W 25 W
最小功率增益 (Gp) 10 dB 10 dB
认证状态 Not Qualified Not Qualified
表面贴装 YES NO
端子形式 FLAT FLAT
端子位置 RADIAL RADIAL
晶体管应用 AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON

 
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