MRF837
NPN SILICON RF LOW POWER TRANSISTOR
DESCRIPTION:
The
ASI MRF837
is Designed primerily
for wideband large signal predriver
stages in 800 MHz and UHF frequency
ranges.
PACKAGE STYLE MACRO-X
MILLIMETERS
DIM
MIN
A
C
D
F
G
4.44
1.90
0.84
0.20
0.76
7.24
10.54
---
MAX
5.21
2.54
0.99
0.30
0.14
8.13
11.43
1.65
INCHES
MIN
0.175
0.075
0.033
0.008
0.030
0.285
0.415
---
MAX
0.205
0.100
0.039
0.012
0.045
0.320
0.450
0.065
FEATURES INCLUDE:
•
Min gain 8.0 dB @ 750 mW/870 MHz
•
Silicon Nitride passivated
•
Low cost Plastic Package
MAXIMUM RATINGS
I
C
V
CBO
P
DISS
T
J
T
STG
θ
JC
200 mA
36 V
1.0 W @ T
C
= 25 °C
-65 °Cto +150 °C
-65 °Cto +150 °C
40 °C/W
1 = COLLECTOR
2 =EMITER
3 = BASE
K
L
N
CHARACTERISTICS
SYMBOL
BV
CES
BV
CEO
BV
EBO
I
CES
h
FE
C
OB
P
G
η
C
I
C
= 5.0 mA
I
C
= 5.0 mA
I
E
= 100 µA
V
CE
= 15 V
V
CE
= 10 V
V
CB
= 15 V
T
C
= 25 °C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
36
16
4.0
100
UNITS
V
V
V
µA
---
pF
dB
%
I
C
= 50 mA
f = 1.0 MHz
P
OUT
= 0.75 W
f = 870 MHz
30
1.8
8.0
55
10
60
200
2.5
V
CE
= 12.5 V
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
