MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF8372/D
The RF Line
NPN Silicon
RF Low Power Transistor
Designed primarily for wideband large signal predriver stages in 800 MHz
and UHF frequency ranges.
•
Specified @ 12.5 V, 870 MHz Characteristics
Output Power = 750 mW
Minimum Gain = 8.0 dB
Efficiency 60% (Typ)
•
State–of–the–Art Technology
Fine Line Geometry
Gold Top Metal and Wires
Silicon Nitride Passivated
Ion Implanted Arsenic Emitters
•
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
•
Order MRF8372 in tape and reel packaging by adding suffix:
R1 suffix = 500 units per reel
R2 suffix = 2,500 units per reel
CASE 751–05, STYLE 1
SORF (SO–8)
MRF8372R1, R2
750 mW, 870 MHz
RF LOW POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 75°C (1)
Derate above 75°C
Storage Temperature Range
Maximum Junction Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
TJ, Tstg
TJmax
Symbol
R
θJC
Value
16
36
4.0
200
1.67
22.2
– 55 to +150
150
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Max
45
Unit
°C/W
DEVICE MARKING
MRF8372 = 8372
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
(Replaces MRF837/D)
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF8372R1, R2
1
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25°C)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
16
36
4.0
—
—
—
—
—
—
—
—
0.1
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc)
hFE
30
90
200
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
1.8
2.5
pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 0.75 W, f = 870 MHz)
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 0.75 W, f = 870 MHz)
Gpe
η
8.0
55
10
60
—
—
dB
%
MRF8372R1, R2
2
MOTOROLA RF DEVICE DATA
C6
B
B
L3
+
C7
C8
+
VCC
–
C4
Z6
L1
L2
Z5
Z1
C1
Z2
C2
Z3
C3
Z4
DUT
C5
C1, C5 — 0.8 – 8.0 pF Johanson Gigatrim
C2, C3 — 10 pF Ceramic Chip Capacitor
C6 — 91 pF Clamped Mica, Mini–Underwood
C4 — 47 pF Ceramic Chip Capacitor
C7 — 91 pF Clamped Mica, Mini–Underwood
C8 — 1.0
µF
25 V Tantalum
B — Bead, Ferroxcube 56–590–65/3B
L1, L2 — 4 Turns, #21 AWG, 5/32″ ID
L3 — 7 Turns, #21 AWG, 5/32″ ID
Z1, Z2 — 1″ x 0.078″ Microstrip, Zo = 50 Ohms
Z3 — 0.25″ x 0.078″ Microstrip, Zo = 50 Ohms
Z4 — 0.15″ x 0.078″ Microstrip, Zo = 50 Ohms
Z5 — 0.30″ x 0.078″ Microstrip, Zo = 50 Ohms
Z6 — 1.63″ x 0.078″ Microstrip, Zo = 50 Ohms
PCB — 1/32″ Glass Teflon,
ε
r = 2.56
Figure 1. 800 – 900 MHz Broadband Circuit
800/900 MHz BAND DATA
12
GPE
10
G PE , GAIN (dB)
Pout = 750 mW
VCC = 12.5 Vdc
η
c , COLLECTOR
IRL, INPUT
RETURN LOSS (dB) EFFICIENCY (%)
70
8
6
50
4
2
800
820
IRL
840
860
880
10
15
20
25
900
η
c
60
f, FREQUENCY (MHz)
Figure 2. Typical Broadband Performance
MOTOROLA RF DEVICE DATA
MRF8372R1, R2
3
Zin
Ohms
VCC = 7.5 V
f
Frequency
MHz
806
870
960
VCC = 12.5 V
VCC = 7.5 V
ZOL*
Ohms
VCC = 12.5 V
Pout = 806 MHz = 1.05 mW
Pout = 870 MHz = 855 mW
Pout = 960 MHz = 580 mW
20.9 – j31.0
32.1 – j26.6
36.3 – j25.7
Pin = 150 mW
8.0 + j1.9
5.2 + j3.5
6.8 + j4.0
Pin = 100 mW
4.0 + j1.2
6.0 + j1.9
6.1 + j2.5
Pout = 806 MHz = 820 mW
Pout = 870 MHz = 635 mW
Pout = 960 MHz = 530 mW
24.7 – j19.2
36.9 – j20.5
39.3 – j18.5
ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage, and frequency.
Table 1. Series Equivalent Input/Output Impedance
TYPICAL CHARACTERISTICS
800/900 MHz BAND DATA (continued)
1200
VCC = 12.5 Vdc
Pout , OUTPUT POWER (mW)
900
Pout , OUTPUT POWER (mW)
1000
Pin = 150 mW
500
100 mW
600
7.5 Vdc
300
50 mW
0
0
15
30
45
60
75
90
105
Pin, INPUT POWER (mW)
120
135
150
0
800
820
840
860
880
900
f, FREQUENCY (MHz)
920
940
960
Figure 3. Output Power versus Input Power
f = 870 MHz
Figure 4. Output Power versus Frequency
VCC = 7.5 Vdc
1200
Pin = 150 mW
Pout , OUTPUT POWER (mW)
900
100 mW
1600
Pout , OUTPUT POWER (mW)
1200
Pin = 150 mW
800
600
50 mW
300
f = 870 MHz
0
6
8
10
12
VCC, COLLECTOR VOLTAGE (Vdc)
14
16
100 mW
400
50 mW
VCC = 12.5 Vdc
820
840
860
880
900
f, FREQUENCY (MHz)
920
940
960
0
800
Figure 5. Output Power versus Collector Voltage
Figure 6. Output Power versus Frequency
MRF8372R1, R2
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
800/900 MHz BAND DATA (continued)
1600
1400
Pout , OUTPUT POWER (mW)
1200
1000
800
600
400
200
f = 512 MHz
0
0
10
20
30
40
50
Pin, INPUT POWER (mW)
60
70
80
7.5 Vdc
VCC = 12.5 Vdc
1200
1000
800
600
400
200
VCC = 7.5 Vdc
0
400
420
440
460
480
f, FREQUENCY (MHz)
500
520
Pout , OUTPUT POWER (mW)
Pin = 75 mW
50 mW
25 mW
Figure 7. Output Power versus Input Power
Figure 8. Output Power versus Frequency
1400
1200
Pout , OUTPUT POWER (mW)
1000
800
600
400
200
f = 512 MHz
0
6
8
10
12
VCC, COLLECTOR VOLTAGE (Vdc)
14
16
25 mW
Pin = 75 mW
50 mW
1500
1300
1100
50 mW
900
700
600
VCC = 12.5 Vdc
300
400
420
440
460
480
f, FREQUENCY (MHz)
500
520
25 mW
Pin = 75 mW
Figure 9. Output Power versus Collector Voltage
Pout , OUTPUT POWER (mW)
Figure 10. Output Power versus Frequency
MOTOROLA RF DEVICE DATA
MRF8372R1, R2
5
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