MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF858/D
NPN Silicon
RF Power Transistor
Designed for 24 Volt UHF large–signal, common emitter, class A linear
amplifier applications in industrial and commercial equipment operating in the
range of 800 – 960 MHz.
•
Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics
Output Power = 3.6 Watts CW
Minimum Power Gain = 11 dB
Minimum ITO = + 44.5 dBm
Typical Noise Figure = 6 dB
•
Characterized with Small–Signal S–Parameters and Series Equivalent
Large–Signal Parameters from 800– 960 MHz
•
Silicon Nitride Passivated
•
100% Tested for Load Mismatch Stress at All Phase Angles with 30:1
VSWR @ 24 Vdc, IC = 0.5 Adc and Rated Output Power
•
Will Withstand RF Input Overdrive of 0.85 W CW
•
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
•
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MRF858
MRF858S
CLASS A
800 – 960 MHz
3.6 W (CW), 24 V
NPN SILICON
RF POWER TRANSISTOR
CASE 319–07, STYLE 2
MRF858
CASE 319A–02, STYLE 2
MRF858S
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Total Device Dissipation @ TC = 50°C
Derate above 50°C
Operating Junction Temperature
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
PD
TJ
Tstg
Characteristic
Thermal Resistance (TJ = 150°C, TC = 50°C)
Symbol
R
θJC
Symbol
Min
Typ
Value
30
55
4
20
0.138
200
– 65 to +150
Unit
Vdc
Vdc
Vdc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Max
6.9
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 20 mA, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 20 mA, VBE = 0)
Collector–Base Breakdown Voltage (IC = 20 mA, IE = 0)
Emitter–Base Breakdown Voltage (IE = 1 mA, IC = 0)
Collector Cutoff Current (VCB = 24 V, IE = 0)
Teflon is a registered trademark of du Pont de Nemours & Co., Inc.
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICES
28
55
55
4
—
35
85
85
5
—
—
—
—
—
1
Vdc
Vdc
Vdc
Vdc
mA
(continued)
Max
Unit
REV 2
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1995
MRF858 MRF858S
1
ELECTRICAL CHARACTERISTICS — continued
Characteristic
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 A, VCE = 5 V)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 24 V, f = 1 MHz)
FUNCTIONAL CHARACTERISTICS
Common–Emitter Power Gain
(VCE = 24 V, IC = 0.5 A, f = 840– 900 MHz,
Power Output = 3.6 W)
Load Mismatch
(Po = 3.6 W)
(VCE = 24 V, IC = 0.5 A, f = 840 MHz,
Load VSWR = 30:1, All Phase Angles)
RF Input Overdrive
(VCE = 24 V, IC = 0.5 A, f = 840 MHz)
No degradation
Third Order Intercept Point
(VCE = 24 V, IC = 0.5 A)
(f1 = 900 MHz, f2 = 900.1 MHz,
Meas. @ IMD 3rd Order = –40 dBc)
Noise Figure
(VCE = 24 V, IC = 0.5 A, f = 900 MHz)
Input Return Loss
(VCE = 24 V, IC = 0.5 A, f = 840– 900 MHz,
Power Output = 3.6 W)
Pg
11
12
—
dB
Cob
—
6.5
8
pF
hFE
30
60
120
—
Symbol
Min
Typ
Max
Unit
ψ
No Degradation in
Output Power
Pin(over)
—
—
0.85
W
ITO
+ 44.5
+ 45.5
—
dBm
NF
IRL
—
—
6
– 12
—
–9
dB
dB
Table 1. MRF858 Common Emitter S–Parameters
VCE
(V)
24
IC
(A)
0.5
f
(MHz)
800
820
840
860
880
900
920
940
960
S11
|S11|
0.942
0.942
0.941
0.940
0.941
0.940
0.940
0.940
0.940
∠φ
167
166
166
166
165
165
165
164
164
|S21|
1.493
1.453
1.415
1.379
1.351
1.320
1.289
1.252
1.222
S21
∠φ
50
50
49
48
47
46
45
44
43
|S12|
0.027
0.027
0.028
0.028
0.029
0.030
0.030
0.031
0.031
S12
∠φ
58
58
59
59
59
59
59
59
59
|S22|
0.538
0.541
0.545
0.550
0.553
0.557
0.562
0.566
0.570
S22
∠φ
– 165
– 164
– 165
– 165
– 165
– 165
– 165
– 165
– 165
Table 2. Zin and ZOL* versus Frequency
f
(MHz)
840
870
900
1.1
1.1
1.2
Zin
(Ohms)
2.9
3.5
3.5
9.9
9.5
9
ZOL*
(Ohms)
– 14.4
– 14.6
– 14.5
VCE = 24 V, IC = 0.5 A, Po = 3.6 W
ZOL* = Conjugate of optimum load impedance into which the device operates at a given output power, voltage and frequency.
MRF858 MRF858S
2
MOTOROLA RF DEVICE DATA
+
R1
R8
VCE
F1
V_SUPPLY
C1
R2
Q1
Q2
R3
R4
R5
R7
C15
R6
+
C2
B1
C3
C4
C7
L3
L4
TL1
C8
C9
DUT
C11
TL4
C12
C10
C13
C14
C15
TL5
OUTPUT
C16
C5
B2
+
C6
L2
L1
INPUT
TL2
TL3
0.685″
B1, B2
C1
C2, C5
C3, C6
C4, C7
C8, C15
C9, C10
C11
C12, C13, C14
C15, C16
F1
L1, L2
L3
L4
Q1
Q2
Short Ferrite Bead, Fair Rite (2743021447)
250
µF,
50 Vdc Electrolytic Capacitor
10
µF,
50 Vdc Electrolytic Capacitor
0.1
µF,
Chip Capacitor
100 pF, Chip Capacitor
43 pF, 100 Mil Chip Capacitor
10 pF, Mini–Unelco
5 pF, Mini–Unelco
0.8 – 8.0 pF, Johanson Gigatrim
1000 pF, Chip Capacitor
1 A Micro–Fuse
10 Turns, 20 AWG, 0.150″ ID (10
Ω
1/2 W Resistor)
4 Turns, 16 AWG, 0.101″ ID
0.5″ 18 AWG Wire
MMBT2222ALT1, NPN Transistor
BD136, PNP Transistor
R1
R2
R3
R4
R5
R6
R7
R8
TL1, TL5
TL2
TL3
TL4
V_Supply
VCE
Board
390
Ω,
1/4 W
500
Ω
Potentiometer, 1/4 W
7.5K
Ω,
1/4 W
2 x 4.7K
Ω,
1/4 W
56
Ω,
2 W
75
Ω,
1/4 W
4.7
Ω,
1/4 W
4
Ω,
10 W
50
Ω,
Microstrip Transmission Line
Microstrip Transmission Line
Microstrip Transmission Line
Microstrip Transmission Line
+ 26 Vdc
±
0.5 Vdc Due to Resistor Tolerance
+ 24 Vdc @ 0.5 A
0.030″ Glass–Teflon
®
2 oz. Cu,
ε
r = 2.55
Figure 1. MRF858 Class A RF Test Fixture Schematic
MOTOROLA RF DEVICE DATA
MRF858 MRF858S
3
TYPICAL CHARACTERISTICS
13.5
13
G pe , POWER GAIN (dB)
Gpe
12.5
12
11.5
11
VSWR
10.5
830
840
850
860
870
880
f, FREQUENCY (MHz)
890
900
1
910
VCC = 24 Vdc
IC = 500 mA
Pout = 3.6 W (CW)
3
2.5
2
1.5
4
3.5
VSWR in , INPUT VSWR
Figure 2. Performance in Broadband Circuit
7
Pout , OUTPUT POWER (WATTS)
6
5
4
3
Pout
2
1
0
0
0.1
0.2
0.3
0.4 0.5 0.6 0.7
Pin, INPUT POWER (WATTS)
0.8
0.9
1
VCC = 24 Vdc
IC = 500 mA
f = 870 MHz
Gpe
15
1
4
13
1
2
11
10
9
8
2000
G pe , POWER GAIN (dB)
1500
IC (mAdc)
Tj = 150°C
Tf = 50°C
1000
500
0
0
2
4
6
8
10 12 14 16 18 20
VCE (Vdc)
22 24 26 28
Figure 3. Output Power & Power Gain versus
Input Power
Figure 4. DC SOA
1100
1000
900
IC (mAdc)
800
700
600
50
00
Tj = 175°C
Tf = 50°C
MTBF FACTOR (HOURS x AMPS2)
1.00E+08
1.72E+07
1.00E+07
3.58E+06
8.57E+05
2.34E+05
1.00E+05
7.17E+04
2.43E+04
1.00E+04
8.98E+03
3.59E+03
1.53E+03
140
160
180 200
220
240
260
TJ, JUNCTION TEMPERATURE (°C)
1.00E+06
2
4
6
8
10 12 14 16 18 20 22 24 26 28
VCE (Vdc)
1.00E+03
100
120
Figure 5. DC SOA
(This device is MTBF limited for VCE
<
20 Vdc.)
Figure 6. MTBF Factor versus
Junction Temperature
MRF858 MRF858S
4
MOTOROLA RF DEVICE DATA
R3 R2 R1
Q1
R5
R6
+ C2
L1
R7
C15
R4
B2
B1
C4
C3
C8
C12
C11
C10
C13
C14
L3
C9
L4
C7
C16
C11
C15
L2
Q1
C6
C5 +
R8
MRF858
Figure 7. MRF858 Test Fixture Component Layout
MOTOROLA RF DEVICE DATA
MRF858 MRF858S
5
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