MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBR901LT1/D
The RF Line
NPN Silicon
High-Frequency Transistor
Designed primarily for use in high–gain, low–noise small–signal amplifiers for
operation up to 2.5 GHz. Also usable in applications requiring fast switching
times.
•
High Current–Gain — Bandwidth Product
•
Low Noise Figure @ f = 1.0 GHz —
NF(matched) = 1.8 dB (Typ) (MRF9011LT1)
NF(matched)
= 1.9 dB (Typ) (MMBR901LT1, T3)
•
High Power Gain —
Gpe(matched) = 13.5 dB (Typ) @ f = 1.0 GHz (MRF9011LT1)
Gpe(matched)
= 12.0 dB (Typ) @ f = 1.0 GHz (MMBR901LT1, T3)
•
Guaranteed RF Parameters (MRF9011LT1)
•
Surface Mounted SOT–23 & SOT–143 Offer Improved RF Performance
Lower Package Parasitics
High Gain
•
Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
T3 suffix = 10,000 units per reel
IC = 30 mA
SURFACE MOUNTED
HIGH–FREQUENCY
TRANSISTOR
NPN SILICON
MMBR901LT1, T3
MRF9011LT1
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE, MMBR901LT1, T3
CASE 318A–05, STYLE 1
SOT–143
LOW PROFILE, MRF9011LT1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Power Dissipation @ TC = 75°C (1)
MMBR901LT1, T3;
MRF9011LT1
Derate above 25°C
Storage Temperature Range
Maximum Junction Temperature
All
Tstg
TJ(max)
Characteristic
Storage Temperature
Thermal Resistance, Junction to Case
MRF9011LT1, MMBR901LT1, T3
Symbol
Tstg
R
θJC
PD(max)
0.300
4.00
– 55 to +150
150
Watt
mW/°C
°C
°C
Symbol
VCEO
VCBO
VEBO
IC
Value
15
25
2.0
30
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Max
150
200
Unit
°C
°C/W
DEVICE MARKING
MRF9011LT1 = 01
MMBR901LT1, T3 = 7A
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
REV 8
MOTOROLA RF
©
Motorola, Inc. 1997
DEVICE DATA
MMBR901LT1, T3 MRF9011LT1
2–1
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
15
25
2.0
—
—
—
—
—
—
—
—
50
Vdc
Vdc
Vdc
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 mAdc, VCE = 5.0 Vdc)
MMBR901LT1, T3
MRF9011LT1
hFE
50
30
—
80
200
200
—
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 15 mAdc, VCE = 10 Vdc, f = 1.0 GHz)
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
MRF9011LT1
MRF9011LT1
fT
Ccb
—
—
3.8
0.55
—
1.0
GHz
pF
FUNCTIONAL TESTS
Power Gain at Minimum Noise Figure
(VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)
Minimum Noise Figure (Figure 3)
(VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)
Insertion Gain in 50
Ω
System
(VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)
Minimum Noise Figure (Figure 3)
(VCE = 6.0 Vdc, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz)
MRF9011LT1
MRF9011LT1
MRF9011LT1
GNFmin
NFmin
S
21
2
NFmin
MMBR901LT1, T3
—
1.9
—
—
—
9.0
13.5
1.8
10.2
—
—
—
dB
dB
dB
dB
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IC = 5.0 mAdc, f = 1.0 GHz)
Common–Emitter Amplifier Gain
(VCC = 6.0 Vdc, IC = 5.0 mAdc, f = 1.0 GHz)
Cobo
MMBR901LT1
Gpe
MMBR901LT1
—
12
—
dB
—
—
1.0
pF
MMBR901LT1, T3 MRF9011LT1
2–2
MOTOROLA RF DEVICE DATA
MRF9011LT1
2
16
VCE = 10 Vdc
f = 1 GHz
12
G NF , GAIN (dB)
1.2
f = 1 MHz
0.8
GNF
8
7
NF, NOISE FIGURE (dB)
6
5
8
NF
0.4
4
CIRCUIT USED IS HP 11608A
1
0
0
2
4
6
8
10
12
14
VCB, COLLECTOR–BASE VOLTAGE (VOLTS)
16
0
0
3
6
9
12 15
18
21
IC, COLLECTOR CURRENT (mA)
24
27
0
30
Γ
S =
Γ
L = 0
Zo = 50 OHMS
4
3
2
C cb, COLLECTOR-BASE CAPACITANCE (pF)
1.6
Figure 1. Collector–Base Capacitance
versus Collector–Base Voltage
Figure 2. Gain and Noise Figure
versus Collector Current
VCE
VBE
RF OUTPUT
RF INPUT
*BIAS
TEE
**SLUG TUNER
D.U.T.
**SLUG TUNER
*BIAS
TEE
**MICROLAB/FXR
**SF–11N
FOR f < 1 GHz
**SF–31N
FOR f > 1 GHz
Figure 3. MRF9011LT1 Functional Circuit Schematic
MOTOROLA RF DEVICE DATA
MMBR901LT1, T3 MRF9011LT1
2–3
MRF9011LT1
40
VCE = 10 Vdc
IC = 5 mA
CIRCUIT USED — SEE FIGURE 3
24
GNF
16
NF
8
2
3
5
4
NF, NOISE FIGURE (dB)
12
G NF , GAIN (dB)
16
GNF
8
7
NF, NOISE FIGURE (dB)
6
5
8
VCE = 10 Vdc
f = 1 GHz
4
3
2
CIRCUIT USED — SEE FIGURE 3
0
0.1
0.2
0.5
1
f, FREQUENCY (GHz)
2
0
0
0
3
6
9
12 15
18 21
IC, COLLECTOR CURRENT (mA)
24
27
30
1
0
32
G NF , GAIN (dB)
1
4
NF
Figure 4. Gain and Noise Figure
versus Frequency
Figure 5. Gain and Noise Figure
versus Collector Current
5
F
τ
, GAIN-BANDWIDTH PRODUCT (GHz)
|S 21| 2, INSERTION GAIN (dB)
VCE = 10 Vdc
Zo = 50 OHMS
30
VCE = 10 Vdc
Zo = 50 OHMS
IC = 5 mA
4
24
3
18
2
12
1
6
0
0.1
0
0
6
12
18
24
IC, COLLECTOR CURRENT (mA)
30
0.2 0.3
0.5
1
2
f, FREQUENCY (GHz)
3
Figure 6. Gain–Bandwidth Product versus
Collector Current
Figure 7. Insertion Gain versus Frequency
G Umax , MAXIMUM UNILATERAL GAIN (dB)
50
GUmax =
|S21|2
(1 – |S11|2)(1 – |S22|2)
VCE = 10 Vdc
Zo = 50 OHMS
IC = 5 mA
40
30
20
10
0
0.1
0.2 0.3
0.5
1
2
f, FREQUENCY (GHz)
3
Figure 8. Maximum Unilateral Gain
versus Frequency
MMBR901LT1, T3 MRF9011LT1
2–4
MOTOROLA RF DEVICE DATA
VCE
(Vdc)
5.0
IC
(mA)
5.0
f
(MHz)
100
200
500
1000
2000
100
200
500
1000
2000
100
200
500
1000
2000
100
200
500
1000
2000
100
200
500
1000
2000
100
200
500
1000
2000
100
200
500
1000
2000
100
200
500
1000
2000
100
200
500
1000
2000
100
200
500
1000
2000
S11
|S11|
0.85
0.78
0.71
0.66
0.60
0.72
0.70
0.66
0.63
0.58
0.65
0.66
0.65
0.63
0.59
0.61
0.66
0.66
0.65
0.61
0.63
0.68
0.69
0.70
0.66
0.85
0.80
0.70
0.65
0.58
0.75
0.71
0.65
0.62
0.57
0.68
0.67
0.64
0.62
0.58
0.64
0.64
0.64
0.62
0.59
0.61
0.63
0.65
0.66
0.63
∠φ
– 41
– 76
– 131
– 169
152
– 59
– 100
– 150
179
147
– 75
– 118
– 159
174
144
– 89
– 130
– 166
171
143
– 132
– 157
– 177
165
138
– 38
– 71
– 126
– 166
154
– 55
– 94
– 145
– 177
149
– 68
– 110
– 155
177
146
– 79
– 122
– 161
174
145
– 114
– 147
– 172
168
140
|S21|
13.64
10.77
6.10
3.22
1.65
20.01
14.31
7.03
3.57
1.79
23.44
15.56
7.10
3.57
1.77
24.32
15.11
6.68
3.32
1.65
13.18
7.07
3.23
1.78
0.93
13.67
10.97
6.35
3.39
1.74
20.12
14.60
7.33
3.74
1.88
23.53
15.90
7.45
3.74
1.90
24.77
15.81
7.10
3.53
1.75
16.25
9.10
4.22
2.27
1.15
S21
∠φ
153
134
102
77
47
145
123
94
73
46
138
116
90
71
45
133
111
88
69
43
118
104
90
71
42
155
136
104
78
48
147
125
96
74
47
140
119
92
71
45
135
114
89
79
44
123
107
90
71
41
|S12|
0.03
0.05
0.08
0.08
0.11
0.03
0.04
0.06
0.07
0.11
0.02
0.04
0.05
0.06
0.11
0.02
0.03
0.04
0.06
0.10
0.02
0.02
0.03
0.05
0.09
0.03
0.05
0.07
0.07
0.10
0.02
0.04
0.05
0.06
0.10
0.02
0.03
0.04
0.06
0.09
0.02
0.03
0.04
0.05
0.09
0.01
0.02
0.03
0.05
0.08
S12
∠φ
65
54
35
33
46
62
49
38
45
57
57
46
42
52
62
51
43
46
56
65
47
44
55
65
79
70
56
37
36
50
66
50
39
46
60
61
49
42
53
65
56
46
46
56
68
48
49
53
63
79
|S22|
0.93
0.80
0.55
0.45
0.47
0.87
0.67
0.44
0.37
0.41
0.81
0.59
0.40
0.35
0.40
0.77
0.55
0.41
0.39
0.44
0.72
0.66
0.62
0.59
0.62
0.93
0.83
0.60
0.51
0.54
0.88
0.72
0.50
0.45
0.49
0.85
0.65
0.47
0.44
0.50
0.81
0.62
0.48
0.46
0.53
0.79
0.71
0.66
0.63
0.67
S22
∠φ
– 17
– 29
– 42
– 48
– 63
– 23
– 36
– 43
– 46
– 60
– 27
– 38
– 40
– 43
– 58
– 28
– 35
– 34
– 39
– 56
– 15
– 16
– 24
– 38
– 62
– 14
– 24
– 35
– 40
– 55
– 19
– 30
– 35
– 38
– 53
– 22
– 31
– 32
– 35
– 51
– 23
– 29
– 28
– 33
– 50
– 15
– 15
– 22
– 33
– 53
10
15
20
30
10
5.0
10
15
20
30
Table 1. MRF9011LT1 Common Emitter S–Parameters
MOTOROLA RF DEVICE DATA
MMBR901LT1, T3 MRF9011LT1
2–5
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