MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF9135L/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of these devices make them ideal for large–signal, common–source amplifier
applications in 26 volt base station equipment.
•
Typical N–CDMA Performance @ 880 MHz, 26 Volts, I
DQ
= 1100 mA
IS–95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 25 Watts Avg.
Power Gain — 17.8 dB
Efficiency — 25%
Adjacent Channel Power —
750 kHz: –47 dBc @ 30 kHz BW
•
Internally Matched, for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 135 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large–Signal Impedance Parameters
•
Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
•
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40
µ″
Nominal.
MRF9135L
MRF9135LR3
MRF9135LSR3
880 MHz, 135 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465–06, STYLE 1
NI–780
MRF9135L
CASE 465A–06, STYLE 1
NI–780S
MRF9135LSR3
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
C
> = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
+15, –0.5
298
1.7
–65 to +200
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
1 (Minimum)
M2 (Minimum)
C7 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.6
Unit
°C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA RF
Motorola, Inc. 2002
DEVICE DATA
MRF9135L MRF9135LR3 MRF9135LSR3
1
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C, 50 ohm system unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 450
µA)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 1100 mAdc)
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 3 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 9 Adc)
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
C
rss
—
—
109
4.4
—
—
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
3
—
—
2.8
3.7
0.19
12
4
5
0.4
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
µAdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS
(In Motorola Test Fixture) Single–Carrier N–CDMA, 1.2288 MHz Channel Bandwidth Carrier,
Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF
Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 25 W Avg. N–CDMA, I
DQ
= 1100 mA,
f = 880.0 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 25 W Avg. N–CDMA, I
DQ
= 1100 mA,
f = 880.0 MHz)
Adjacent Channel Power Ratio
(V
DD
= 26 Vdc, P
out
= 25 W Avg. N–CDMA, I
DQ
= 1100 mA,
f = 880.0 MHz; ACPR @ 25 W, 1.23 MHz Bandwidth, 750 kHz
Channel Spacing)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 25 W Avg. N–CDMA, I
DQ
= 1100 mA,
f = 880.0 MHz)
Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 25 W Avg. N–CDMA, I
DQ
= 1100 mA,
f = 865 MHz and 895 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 25 W Avg. N–CDMA, I
DQ
= 1100 mA,
f = 865 MHz and 895 MHz)
Adjacent Channel Power Ratio
(V
DD
= 26 Vdc, P
out
= 25 W Avg. N–CDMA, I
DQ
= 1100 mA,
f = 865 MHz and 895 MHz; ACPR @ 25 W, 1.23 MHz Bandwidth, 750
kHz Channel Spacing)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 25 W Avg. N–CDMA, I
DQ
= 1100 mA,
f = 865 MHz and 895 MHz)
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 135 W CW, I
DQ
= 1100 mA,
f = 880.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
G
ps
16
17.8
—
dB
η
22
25
—
%
ACPR
—
–47
–45
dBc
IRL
—
–13.5
–9
dB
G
ps
—
17
—
dB
η
—
24
—
%
ACPR
—
–46
—
dBc
IRL
—
–12.5
—
dB
Ψ
No Degradation In Output Power
MRF9135L MRF9135LR3 MRF9135LSR3
2
MOTOROLA RF DEVICE DATA
+
V
GG
B2
+
C9
RF
INPUT
C8
C7
L1
C10
Z11
L2
C11
Z12 Z13 Z14
C18
B1
C19
+
+
C23
+
V
DD
C20 C21 C22
RF
OUTPUT
Z1
C1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
C5
Z9
Z10
Z15
Z16 Z17
Z18
C17
Z19
DUT
C2
C3
C4
C6
C12
C13
C14
C15
C16
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
0.430″ x 0.080″ Microstrip
0.430″ x 0.080″ Microstrip
0.800″ x 0.080″ Microstrip
0.200″ x 0.220″ Microstrip
0.110″ x 0.220″ Microstrip
0.175″ x 0.220″ Microstrip
0.200″ x 0.220″ x 0.630″ Taper
0.250″ x 0.630″ Microstrip
0.050″ x 0.630″ Microstrip
0.050″ x 0.630″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Z19
0.105″ x 0.630″ Microstrip
0.145″ x 0.630″ Microstrip
0.200″ x 0.630″ x 0.220″ Taper
0.180″ x 0.220″ Microstrip
0.110″ x 0.220″ Microstrip
0.200″ x 0.220″ Microstrip
0.900″ x 0.080″ Microstrip
0.360″ x 0.080″ Microstrip
0.410″ x 0.080″ Microstrip
Figure 1. 880 MHz Test Circuit Schematic
Table 1. 880 MHz Test Circuit Component Designations and Values
Part
B1, B2
C1, C7, C17, C18
C2, C16
C3
C4, C15
C5, C6
C8
C9, C20, C21, C22
C10, C11, C12, C13
C14
C19
C23
L1, L2
WB1, WB2
PCB
Bedstead
Board Material
Description
Short Ferrite Beads, Surface Mount
47 pF Chip Capacitors, B Case
0.6–4.5 Gigatrim Variable Capacitors
8.2 pF Chip Capacitor, B Case
0.8–8.0 Gigatrim Variable Capacitors
12 pF Chip Capacitors, B Case
20K pF Chip Capacitor, B Case
10
µF,
35 V Tantulum Capacitors
7.5 pF Chip Capacitors, B Case
11 pF Chip Capacitor, B Case
0.56
µF,
50 V Chip Capacitor
470
µF
Electrolytic Capacitor
12.5 nH Coilcraft inductors
10 mil Brass Shim (0.205 x 0.530)
Etched Circuit Board
Circuit Bedstead
30 mil Glass
Teflon
,
ε
r
= 2.55, 2 oz Cu
Value, P/N or DWG
95F786
100B470JP 500X
44F3360
100B8R2BP 500X
44F3360
100B120JP 500X
200B203MP50X
93F2975
100B7R5JP 500X
100B110JP 500X
C1825C564K5RA7800
14F185
A04T–5
RF–Design Lab
900 MHz 4X6 Cobra Rev 02
DWG #990528JAM2
GX–0300–55–22
Manufacturer
Newark
ATC
Newark
ATC
Newark
ATC
ATC
Newark
ATC
ATC
Kemet
Newark
Coilcraft
RF–Design Lab
CMR
RF–Design Lab
Arlon
MOTOROLA RF DEVICE DATA
MRF9135L MRF9135LR3 MRF9135LSR3
3
C23
C9
B1
C8
C20 C21 C22
B2
C7
L1
WB1
WB2
C14
C2
C3
C4
C6
CUT OUT AREA
C12
C13
C15
C16
C17
C5
C10
C11
C18
L2
C19
C1
MRF9135L
900 MHz
Rev-02
Figure 2. 880 MHz Test Circuit Component Layout
MRF9135L MRF9135LR3 MRF9135LSR3
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
19
18
G ps , POWER GAIN (dB)
17
16
15
14
13
12
11
860
IRL
ACPR
G
ps
η
V
DD
= 26 Vdc
P
out
= 25 W (Avg.)
I
DQ
= 1100 mA
N-CDMA IS-95 Pilot, Sync, Paging
Traffic Codes 8 through 13
35
30
25
20
-20
ACPR (dBc)
-30
-40
-50
875
880
885
890
895
-60
900
h
, DRAIN
EFFICIENCY (%)
-10
-12
-14
-16
-18
865
870
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit
Performance
19
18.5
G ps , POWER GAIN (dB)
18
17.5
17
16.5
16
15.5
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
I
DQ
= 1650 mA
1320 mA
1100 mA
880 mA
V
DD
= 26 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
IMD, INTERMODULATION DISTORTION (dBc)
-20
V
DD
= 26 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
-30
-40
I
DQ
= 880 mA
1650 mA
-50
IRL, INPUT RETURN LOSS (dB)
1320 mA
1100 mA
-60
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
Figure 4. Power Gain versus Output Power
Figure 5. Intermodulation Distortion versus
Output Power
20
50
40
30
20
V
DD
= 26 Vdc
I
DQ
= 1100 mA
f1 = 880 MHz
10
P
out
, OUTPUT POWER (WATTS) AVG.
100
IMD, INTERMODULATION DISTORTION (dBc)
-10
-20
-30
-40
-50
-60
-70
-80
1
3rd Order
5th Order
7th Order
V
DD
= 26 Vdc
I
DQ
= 1100 mA
f1 = 880 MHz, f2 = 880.1 MHz
16
14
12
η
10
10
0
10
P
out
, OUTPUT POWER (WATTS) PEP
100
1
Figure 6. Intermodulation Distortion Products
versus Output Power
Figure 7. Power Gain and Efficiency versus
Output Power
MOTOROLA RF DEVICE DATA
MRF9135L MRF9135LR3 MRF9135LSR3
5
η
, DRAIN EFFICIENCY (%)
18
G ps , POWER GAIN (dB)
G
ps
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