MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBR941LT1/D
The RF Line
NPN Silicon
Low Noise, High-Frequency
Transistors
Designed for use in high gain, low noise small–signal amplifiers. This series
features excellent broadband linearity and is offered in a variety of packages.
•
Fully Implanted Base and Emitter Structure
•
9 Finger, 1.25 Micron Geometry with Gold Top Metal
•
Gold Sintered Back Metal
•
Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
T3 suffix = 10,000 units per reel
IC = 50 mA
LOW NOISE
HIGH–FREQUENCY
TRANSISTORS
MMBR941
MRF947
MRF9411
SERIES
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
MMBR941LT1, T3, MMBR941BLT1
CASE 419–02, STYLE 3
MRF947AT1, MRF947BT1,
MRF947T1, T3
CASE 318A–05, STYLE 1
SOT–143
LOW PROFILE
MRF9411LT1
REV 9
MOTOROLA RF
©
Motorola, Inc. 1997
DEVICE DATA
MMBR941 MRF947 MRF9411 SERIES
2–1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Power Dissipation (1) TC = 75°C
Derate linearly above Tcase = 75°C @
Collector Current — Continuous (2)
Maximum Junction Temperature
Storage Temperature
Thermal Resistance,
Junction to Case
Symbol
VCEO
VCBO
VEBO
PDmax
IC
TJmax
Tstg
R
θJC
MMBR941LT1, T3
10
20
1.5
0.25
3.33
50
150
– 55 to +150
300
MRF9411LT1
10
20
1.5
0.25
3.33
50
150
– 55 to +150
300
MRF947 Series
10
20
1.5
0.188
2.5
50
150
– 55 to +150
400
Unit
Vdc
Vdc
Vdc
Watts
mW/°C
mA
°C
°C
°C/W
DEVICE MARKING
MMBR941LT1 = 7Y
MRF9411LT1 = 10
MMBR941BLT1 = 7N
MRF947AT1 = G
MRF947T1, T3 = A
MRF947BT1 = H
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(3)
Collector–Emitter Breakdown Voltage
(IC = 0.1 mA, IB = 0)
Collector–Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
Emitter Cutoff Current
(VEB = 1.0 V, IC = 0)
Collector Cutoff Current
(VCB = 10 V, IE = 0)
V(BR)CEO
All
V(BR)CBO
All
IEBO
All
ICBO
All
—
—
0.1
µAdc
—
—
0.1
µAdc
20
23
—
Vdc
10
12
—
Vdc
ON CHARACTERISTICS
(3)
DC Current Gain
(VCE = 6.0 V, IC = 5.0 mA) (MMBR941LT1, MRF9411LT1)
(MMBR941BLT1)
DC Current Gain (VCE = 1.0 V, IC = 500
µA)
DC Current Gain
(VCE = 6.0 V, IC = 5.0 mA)
MRF947T1, MRF947BT1
MRF947T1, T3
MRF947AT1
MRF947BT1
hFE
50
100
hFE1
hFE2
hFE3
hFE4
50
50
75
100
—
—
—
—
—
—
200
200
—
—
150
200
—
—
—
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Current Gain — Bandwidth Product
(VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)
Ccb
All
fT
All
—
8.0
—
GHz
—
0.35
—
pF
NOTE:
1. To calculate the junction temperature use TJ = PD x R
θJC
+ TCASE. Case temperature measured on collector lead immediately adjacent to
body of package.
2. IC — Continuous (MTBF
≈
10 years).
3. Pulse width
≤
300
µs,
duty cycle
≤
2% pulsed.
MMBR941 MRF947 MRF9411 SERIES
2–2
MOTOROLA RF DEVICE DATA
PERFORMANCE CHARACTERISTICS
Conditions
Insertion Gain
(VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 15 mA, f = 2.0 GHz)
Maximum Unilateral Gain (1)
(VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 15 mA, f = 2.0 GHz)
Noise Figure — Minimum (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
Associated Gain at Minimum NF (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
Noise Figure — 50 ohm Source
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
NOTE:
1. Maximum Unilateral Gain is GUmax =
Symbol
|S21|2
—
—
GU max
—
—
NFMIN
—
—
GNF
—
—
NF50
Ω
|S21|2
(1
–
|S11|2)(1
–
|S22|2)
—
15
9.5
1.9
—
—
2.8
—
—
—
14
8.5
1.9
—
—
2.8
—
—
—
14
10
1.9
—
—
2.8
dB
1.5
2.1
—
—
—
—
1.5
2.1
—
—
—
—
1.5
2.1
—
—
dB
18
12
—
—
—
—
16
10
—
—
—
—
14.8
11.6
—
—
dB
16
10
—
—
—
—
14
8.0
—
—
—
—
14
10.8
—
—
dB
MRF9411LT1
Min
Typ
Max
MMBR941LT1, T3
Min
Typ
Max
MRF947 Series
Min
Typ
Max
Unit
dB
TYPICAL CHARACTERISTICS
MMBR941LT1, T3; MMBR941BLT1; MRF9411LT1; MRF9411BLT1
1
0.7
CCB , CAPACITANCE (pF)
hFE , DC CURRENT GAIN
0.5
300
200
100
70
50
30
20
10
1
2
3
5
7 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70
100
VCE = 6 V
0.3
f = 1 MHz
0.2
0.1
1
2
3
5
VCB, REVERSE VOLTAGE (V)
7
10
Figure 1. Collector–Base Capacitance
versus Voltage
12
f T, GAIN BANDWIDTH PRODUCT (GHz)
10
8
6
4
2
0
VCE = 6 V
f = 1 GHz
1
2
3
5
7
10
20
30
50 70
100
24
20
16
Figure 2. DC Current Gain versus
Collector Current
|S 21| 2, INSERTION GAIN (dB)
MRF9411LT1
12
8
4
0
VCE = 6 V
f = 1 GHz
1
2
3
5
7
10
20
30
50 70
100
MMBR941LT1, T3
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 3. Gain Bandwidth Product versus
Collector Current
Figure 4. Insertion Gain versus Collector Current
MOTOROLA RF DEVICE DATA
MMBR941 MRF947 MRF9411 SERIES
2–3
FORWARD INSERTION GAIN AND
MAXIMUM UNILATERAL GAIN versus FREQUENCY
30
|S 21| 2, INSERTION GAIN (dB)
GU max, MAXIMUM UNILATERAL GAIN (dB)
25
20
15
10
|S21|2
5
0
0.1
GUmax
IC = 15 mA
VCE = 6 V
|S 21| 2, INSERTION GAIN (dB)
GU max, MAXIMUM UNILATERAL GAIN (dB)
30
25
20
15
10
|S21|2
5
0
0.1
GUmax
IC = 15 mA
VCE = 6 V
0.2 0.3
0.5 0.7
1
2
3
5
7
10
0.2 0.3
0.5 0.7
1
2
3
5
7
10
f, FREQUENCY, (GHz)
f, FREQUENCY, (GHz)
Figure 5. MMBR941LT1, T3
Figure 6. MRF9411LT1
24
20
16
12
8
4
0
0.1
CIRCUIT — FIGURE 9
NF50
Ω
NFmin
0.2 0.3
0.5 0.7
1
2
3
5
7
VCE = 6 V
IC = 5 mA
NF, NOISE FIGURE (dB)
6
5
4
3
NFmin @ 2 GHz
2
1
0
NFmin @ 1 GHz
VCE = 6 V
G NF , ASSOCIATED GAIN (dB)
MRF9411LT1
MMBR941LT1, T3
MRF947
4
3
2
1
0
10
NF, NOISE FIGURE (dB)
6
5
1
2
3
5
7
10
20
30
50 70 100
f, FREQUENCY, (GHz)
IC, COLLECTOR CURRENT (mA)
Figure 7. Noise Figure and Associated Gain
versus Frequency
Figure 8. Minimum Noise Figure versus
Collector Current
VCE
VBE
DUT
RF OUTPUT
RF INPUT
BIAS
*SLUG TUNER
NETWORK
*SLUG TUNER
BIAS
NETWORK
*MICROLAB/FXR
**SF
– 11N < 1 GHz
**SF
– 31IN
≥
1 GHz
Figure 9. Functional Circuit Schematic (all devices)
MMBR941 MRF947 MRF9411 SERIES
2–4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
MRF947 SERIES
150
130
h FE , DC CURRENT GAIN
30
C, CAPACITANCE (pF)
110
1
Cob
0.5
Ccb
90
70
0.2
0.1
1
2
5
10
20
REVERSE VOLTAGE (V)
50
0.1
0.5
1
2
5
10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 10. Capacitance versus Voltage
8
f T, GAIN BANDWIDTH PRODUCT (GHz)
15
Figure 11. DC Current Gain versus Collector Current
5
GNF
13
6
G NF, ASSOCIATED GAIN (dB)
VCE = 6 V
VCE = 6 V
f = 1 GHz
4
11
NF
9
7
3
N F (dB)
4
2
1
2
0
1
2
3 4 5
10
15 20
30
5
1
2
5
IC, COLLECTOR CURRENT (mA)
10
20
30
IC, COLLECTOR CURRENT (mA)
0
Figure 12. Gain–Bandwidth Product
versus Collector Current
32
28
24
GAIN (dB)
20
16
12
8
MSG
Figure 13. Associated Gain and Minimum
Noise Figure versus Collector Current
VCE = 6 V
IC = 5 mA
MAG
MSG
S21 2
4
0
0.1
0.2
0.3
0.5
1
f, FREQUENCY (GHz)
2
3
5
Figure 14. Forward Insertion Gain and Maximum
Stable/Available Power Gain versus Frequency
MOTOROLA RF DEVICE DATA
MMBR941 MRF947 MRF9411 SERIES
2–5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
