MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF959T1/D
NPN Silicon
Low Noise Transistors
Motorola’s MRF959 is a high performance silicon NPN transistor designed for
use in high gain, low noise small–signal amplifiers. The MRF959 is well suited
for low voltage applications. This device features a 9 GHz DC current
gain–bandwidth product with excellent linearity.
•
Low Noise Figure, NFmin = 1.3 dB (Typ) @ 1 GHz @ 5 mA
•
High Current Gain–Bandwidth Product, ft = 9 GHz @ 30 mA
•
Maximum Available Gain, MAG = 17 dB (Typ) @ 1 GHz @ 15 mA
•
Output Third Order Intercept, OIP3 = +30 dBm @ 1 GHz @ 30 mA
•
Fully Ion–Implanted with Gold Metallization and Nitride Passivation
•
Available in Tape and Reel Packaging Options:
T1 Suffix = 3,000 Units per Reel
MRF959T1
ICmax = 100 mA
LOW NOISE
TRANSISTORS
CASE 463–01, STYLE 1
(SC–90)
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Power Dissipation (1) TC = 75°C
Derate linearly above TC = 75°C @
Collector Current — Continuous (2)
Maximum Junction Temperature
Storage Temperature
Thermal Resistance, Junction to Case
Symbol
VCEO
VCBO
VEBO
PDmax
IC
TJmax
Tstg
R
θJC
Value
10
20
1.5
0.150
2
100
150
– 55 to +150
500
Unit
Vdc
Vdc
Vdc
Watts
mW/°C
mA
°C
°C
°C/W
DEVICE MARKINGS
MRF959T1 = V1
(1) To calculate the junction temperature use TJ = (PD x R
θJC
) + TC. The case temperature is measured on collector lead adjacent to the package
body.
(2) IC — Continuous (MTBF > 10 years).
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF959T1
1
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(3)
Collector–Emitter Breakdown Voltage
(IC = 0.1 mA, IB = 0)
Collector–Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
Emitter Cutoff Current
(VEB = 1 V, IC = 0)
Collector Cutoff Current
(VCB = 10 V, IE = 0)
V(BR)CEO
V(BR)CBO
IEBO
ICBO
10
20
—
—
13
25
—
—
—
—
0.1
0.1
Vdc
Vdc
µA
µA
ON CHARACTERISTICS
(3)
DC Current Gain (VCE = 6 V, IC = 5 mA)
hFE
75
—
150
—
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 1 V, IE = 0, f = 1 MHz)
(VCB = 5 V, IE = 0, f = 1 MHz)
Current Gain — Bandwidth Product
(VCE = 6 V, IC = 30 mA, f = 1 GHz)
Ccb
—
—
fT
—
0.63
0.44
9
—
—
—
GHz
pF
PERFORMANCE CHARACTERISTICS
Conditions
Insertion Gain
(VCE = 1 V, IC = 1 mA, f = 1 GHz)
(VCE = 6 V, IC = 15 mA, f = 1 GHz)
Maximum Unilateral Gain (4)
(VCE = 1 V, IC = 1 mA, f = 1 GHz)
(VCE = 6 V, IC = 15 mA, f = 1 GHz)
Maximum Stable Gain and/or Maximum Available Gain (5)
(VCE = 1 V, IC = 1 mA, f = 1 GHz)
(VCE = 6 V, IC = 15 mA, f = 1 GHz)
Noise Figure — Minimum
(VCE = 1 V, IC = 1 mA, f = 1 GHz)
(VCE = 6 V, IC = 5 mA, f = 1 GHz)
Noise Resistance
(VCE = 1 V, IC = 1 mA, f = 1 GHz)
(VCE = 6 V, IC = 5 mA, f = 1 GHz)
Associated Gain at Minimum NF
(VCE = 1 V, IC = 1 mA, f = 1 GHz)
(VCE = 6 V, IC = 5 mA, f = 1 GHz)
Output Power at 1 dB Gain Compression (6)
(VCE = 6 V, IC = 15 mA, f = 1 GHz)
Output Third Order Intercept (6)
(VCE = 6 V, IC = 15 mA, f = 1 GHz)
Symbol
|S21|2
—
—
GUmax
—
—
MSG
MAG
NFmin
—
—
RN
—
—
GNF
—
—
P1dB
OIP3
—
—
8
13
+12
+26
—
—
—
—
dBm
dBm
14
9
—
—
dB
1.6
1.3
—
—
Ω
—
—
9
15
10
17
—
—
dB
—
—
dB
4
14
—
—
dB
Min
Typ
Max
Unit
dB
(3) Pulse width
≤
300
µs,
duty cycle
≤
2% pulsed.
|S21|2
(4) Maximum unilateral gain is GUmax =
(1
–
|S11|2)(1
–
|S22|2)
|S21|
K2
–
1) , if K > 1
(K
(5) Maximum available gain and maximum stable gain are defined by the K factor as follows: MAG =
|S12|
(6) Zin = 50
Ω
and Zout matched for small signal maximum gain.
|S21|
MSG =
, if K < 1
|S12|
"
MRF959T1
2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
2.0
1.8
1.6
C, CAPACITANCE (pF)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
2
4
6
VCB, REVERSE VOLTAGE (V)
8
10
Cob
Ccb
f = 1 MHz
C IB, INPUT CAPACITANCE
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0
0.4
0.8
1.2
1.6
VEB, EMITTER–BASE VOLTAGE (V)
2.0
Cib
f = 1 MHz
Figure 1. Capacitance versus Voltage
Figure 2. Input Capacitance versus Voltage
140
f T , GAIN BANDWIDTH PRODUCT (GHz)
100
120
h FE , DC CURRENT GAIN
100
80
60
40
20
0.1
VCE = 1 V
10
9
8
7
6
5
4
3
2
1
0.1
1
10
IC, COLLECTOR CURRENT (mA)
100
VCE = 6 V
f = 1 GHz
10
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain versus
Collector Current
Figure 4. Gain–Bandwidth Product versus
Collector Current
VCE
VBE
RF
INPUT
Pin
BIAS NETWORK
DUT
*SLUG TUNER
*SLUG TUNER
BIAS NETWORK
*MICROLAB/FXR
SF–11N < 1 GHz
SF–31N > 1 GHz
RF
OUTPUT
Pout
Figure 5. Functional Circuit Schematic
MOTOROLA RF DEVICE DATA
MRF959T1
3
TYPICAL CHARACTERISTICS
25
MSG, MAXIMUM STABLE GAIN; MAG,
MAXIMUM AVAILABLE GAIN (dB)
MSG, MAXIMUM STABLE GAIN; MAG,
MAXIMUM AVAILABLE GAIN (dB)
VCE = 1 V
IC = 1 mA
MSG
35
30
MSG
25
20
15
MAG
10
5
0
0.1
1
f, FREQUENCY (GHz)
10
MSG
VCE = 6 V
IC = 5 mA
20
15
10
MAG
5
0
0.1
1
f, FREQUENCY (GHz)
10
Figure 6. Maximum Stable/Available Gain
versus Frequency
Figure 7. Maximum Stable/Available Gain
versus Frequency
2
S 21
, FORWARD INSERTION GAIN; GUmax ,
MAXIMUM UNILATERAL GAIN (dB)
30
25
20
15
10
5
0
–5
1
f, FREQUENCY (GHz)
S
21
2
GUmax
VCE = 1 V
IC = 1 mA
2
S 21
, FORWARD INSERTION GAIN; GUmax ,
MAXIMUM UNILATERAL GAIN (dB)
35
40
35
30
25
20
15
10
5
0
0.1
1
f, FREQUENCY (GHz)
10
S
21
2
GUmax
VCE = 6 V
IC = 5 mA
–10
0.1
10
Figure 8. Maximum Unilateral Gain and
Forward Insertion Gain versus Frequency
16
14
12
GUmax
10
8
S
21
2
6
4
0.1
VCE = 1 V
f = 1 GHz
16
14
12
10
8
6
4
0.1
Figure 9. Maximum Unilateral Gain and
Forward Insertion Gain versus Frequency
2
S 21
, FORWARD INSERTION GAIN; GUmax ,
MAXIMUM UNILATERAL GAIN (dB)
2
S 21
, FORWARD INSERTION GAIN; GUmax ,
MAXIMUM UNILATERAL GAIN (dB)
VCE = 6 V
f = 1 GHz
GUmax
S
21
2
1
10
100
IC, COLLECTOR CURRENT (mA)
1
10
IC, COLLECTOR CURRENT (mA)
100
Figure 10. Maximum Unilateral Gain and
Forward Insertion Gain versus Collector Current
Figure 11. Maximum Unilateral Gain and
Forward Insertion Gain versus Collector Current
MRF959T1
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
16
MSG, MAXIMUM STABLE GAIN; MAG,
MAXIMUM AVAILABLE GAIN (dB)
VCE = 1 V
f = 1 GHz
14
MSG
12
MAG
MSG, MAXIMUM STABLE GAIN; MAG,
MAXIMUM AVAILABLE GAIN (dB)
20
VCE = 6 V
f = 1 GHz
18
MAG
16
MSG
14
10
12
8
0.1
10
1
IC, COLLECTOR CURRENT (mA)
100
10
0.1
10
1
IC, COLLECTOR CURRENT (mA)
100
Figure 12. Maximum Stable/Available Gain
versus Collector Current
Figure 13. Maximum Stable/Available Gain
versus Collector Current
20
18
GNF, ASSOCIATED GAIN (dB)
16
14
GNF
VCE = 1 V
IC = 1 mA
5
26
NFmin , MINIMUM NOISE FIGURE (dB)
GNF, ASSOCIATED GAIN (dB)
VCE = 6 V
IC = 5 mA
GNF
5
NFmin , MINIMUM NOISE FIGURE (dB)
NFmin , MINIMUM NOISE FIGURE (dB)
4
22
4
12
10
8
6
4
2
0
0.1
1
f, FREQUENCY (GHz)
10
NFmin
3
18
3
2
14
NFmin
2
1
10
1
0
10
0
6
0.1
1
f, FREQUENCY (GHz)
Figure 14. Minimum Noise Figure and
Associated Gain versus Frequency
16
VCE = 1 V
f = 1 GHz
GNF, ASSOCIATED GAIN (dB)
14
GNF
4
5
18
NFmin , MINIMUM NOISE FIGURE (dB)
GNF, ASSOCIATED GAIN (dB)
16
Figure 15. Minimum Noise Figure and
Associated Gain versus Frequency
6
VCE = 6 V
f = 1 GHz
GNF
4
3
NFmin
2
1
0
100
5
14
12
3
12
10
8
6
0.1
10
NFmin
2
8
1
0
100
6
0.1
1
10
IC, COLLECTOR CURRENT (mA)
1
10
IC, COLLECTOR CURRENT (mA)
Figure 16. Minimum Noise Figure and
Associated Gain versus Collector Current
Figure 17. Minimum Noise Figure and
Associated Gain versus Collector Current
MOTOROLA RF DEVICE DATA
MRF959T1
5
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