MITSUBISHI Pch POWER MOSFET
FY8ABJ-03
HIGH-SPEED SWITCHING USE
FY8ABJ-03
OUTLINE DRAWING
Dimensions in mm
6.0
4.4
5.0
1.8 MAX.
0.4
1.27
SOURCE
GATE
DRAIN
q
4V DRIVE
q
V
DSS ...............................................................................
–30V
q
r
DS (ON) (MAX) .............................................................
20mΩ
q
I
D .........................................................................................
–8A
SOP-8
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
T
ch
T
stg
—
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
–30
±20
–8
–56
–8
–2.1
–8.4
2.0
–55 ~ +150
–55 ~ +150
0.07
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Sep.1998
L = 10µH
Typical value
MITSUBISHI Pch POWER MOSFET
FY8ABJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-a)
t
rr
Parameter
Drain-source breakdown voltage
(Tch = 25°C)
Test conditions
I
D
= –1mA, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= –30V, V
GS
= 0V
I
D
= –1mA, V
DS
= –10V
I
D
= –8A, V
GS
= –10V
I
D
= –4A, V
GS
= –4V
I
D
= –8A, V
GS
= –10V
I
D
= –8A, V
DS
= –10V
V
DS
= –10V, V
GS
= 0V, f = 1MHz
Limits
Min.
–30
—
—
–1.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
–2.0
14
26
0.112
19
3650
900
385
30
55
250
105
–0.77
—
100
Max.
—
±0.1
–0.1
–2.5
20
37
0.160
—
—
—
—
—
—
—
—
–1.20
62.5
—
Unit
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
V
DD
= –15V, I
D
= –4A, V
GS
= –10V, R
GEN
= R
GS
= 50Ω
I
S
= –2.1A, V
GS
= 0V
Channel to ambient
I
S
= –2.1A, dis/dt = 50A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
2.5
POWER DISSIPATION P
D
(W)
DRAIN CURRENT I
D
(A)
MAXIMUM SAFE OPERATING AREA
–10
2
–7
–5
–3
–2
–7
–5
–3
–2
–7
–5
–3
–2
–7
–5
–3
–2
tw =
1ms
2.0
–10
1
1.5
10ms
100ms
Tc = 25°C
Single Pulse
DC
–10
0
1.0
0.5
–10
–1
0
0
50
100
150
200
–10
–2 –2
–10
–2–3 –5–7
–10
–1
–2–3 –5–7
–10
0
–2–3 –5–7
–10
1
–2–3 –5–7
–10
2
DRAIN-SOURCE VOLTAGE V
DS
(V)
CASE TEMPERATURE T
C
(°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
–50
V
GS
= –10V
–8V
–4V
–6V –5V
OUTPUT CHARACTERISTICS
(TYPICAL)
–20
V
GS
=
–10V
–4V
–5V
–6V
–8V
–3V
Tc = 25°C
Pulse Test
DRAIN CURRENT I
D
(A)
–40
DRAIN CURRENT I
D
(A)
–16
–30
Tc = 25°C
Pulse Test
–12
–20
–3V
–8
–2.5V
–10
P
D
= 2W
–4
P
D
= 2W
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN-SOURCE VOLTAGE V
DS
(V)
Sep.1998
MITSUBISHI Pch POWER MOSFET
FY8ABJ-03
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
–2.0
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(mΩ)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
Tc = 25°C
Pulse Test
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
40
Tc = 25°C
Pulse Test
V
GS
= –4V
–1.6
32
–1.2
24
–0.8
I
D
= –32A
–24A
16
–10V
–0.4
–16A
–8A
8
0
–10
–1
–2 –3 –5–7
–10
0
–2 –3 –5–7
–10
1
–2 –3 –5
DRAIN CURRENT I
D
(A)
0
0
–2
–4
–6
–8
–10
GATE-SOURCE VOLTAGE V
GS
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
–40
Tc = 25°C
V
DS
= –10V
Pulse Test
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
10
2
7
5
Tc =25°C 75°C 125°C
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
–32
3
2
–24
10
1
7
5
3
2
V
DS
= –10V
Pulse Test
–16
–8
0
0
–2
–4
–6
–8
–10
10
0
–5 –7
–10
0
–2 –3
–5 –7
–10
1
–2 –3
–5
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
7
5
Tch = 25°C
V
DD
= –15V
V
GS
= –10V
R
GEN
= R
GS
= 50Ω
10
4
CAPACITANCE
Ciss, Coss, Crss (pF)
7
5
3
2
SWITCHING TIME (ns)
Tch = 25°C
V
GS
= 0V
f = 1MH
Z
Ciss
3
2
t
d(off)
t
f
10
2
7
5
3
2
t
r
10
3
7
5
3
2
Coss
Crss
t
d(on)
–5–7
–10
–1
–2 –3 –5–7
–10
0
–2 –3 –5–7
–10
1
–2 –3
10
1 –1
–10
–2 –3
–5 –7
–10
0
–2 –3
–5 –7
–10
1
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
Sep.1998
MITSUBISHI Pch POWER MOSFET
FY8ABJ-03
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
–10
Tch = 25°C
I
D
= –8A
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–40
SOURCE CURRENT I
S
(A)
V
GS
= 0V
Pulse Test
–8
V
DS
=
–25V
–20V
–10V
–32
Tc = 25°C
75°C
125°C
–6
–24
–4
–16
–2
–8
0
0
20
40
60
80
100
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
GATE CHARGE Q
g
(nC)
SOURCE-DRAIN VOLTAGE V
SD
(V)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10
1
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
7
5
3
2
V
GS
= –10V
I
D
= –8A
Pulse Test
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
–2.0
V
DS
= –10V
I
D
= –1mA
–1.6
–1.2
10
0
7
5
3
2
–0.8
–0.4
10
–1
–50
0
50
100
150
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Z
th (ch–a)
(°C/ W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
V
GS
= 0V
I
D
= –1mA
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10
2
7
5 D = 1.0
3
0.5
2
7
5
3
2
7
5
3
2
7
5
3
2
0.2
0.1
0.05
P
DM
0.02
0.01
Single Pulse
tw
T
D
=
tw
T
1.2
10
1
1.0
10
0
0.8
0.6
10
–1
0.4
–50
0
50
100
150
10
–2
10
–4
2 3 57
10
–3
23 57
10
–2
23 57
10
–1
2 3 57
10
0
2 3 57
10
1
2 3 57
10
2
2 3 57
10
3
PULSE WIDTH t
w
(s)
Sep.1998
CHANNEL TEMPERATURE Tch (°C)
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