MITSUBISHI Pch POWER MOSFET
FY4ADJ-03A
HIGH-SPEED SWITCHING USE
FY4ADJ-03A
OUTLINE DRAWING
Dimensions in mm
6.0
4.4
5.0
1.8 MAX.
0.4
1.27
SOURCE
GATE
DRAIN
q
4V DRIVE
q
V
DSS ...............................................................................
–30V
q
r
DS (ON) (MAX) .............................................................
80mΩ
q
I
D .........................................................................................
–4A
SOP-8
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
T
ch
T
stg
—
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
–30
±20
–4
–28
–4
–1.7
–6.8
1.6
–55 ~ +150
–55 ~ +150
0.07
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Sep.1998
L = 10µH
Typical value
MITSUBISHI Pch POWER MOSFET
FY4ADJ-03A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-a)
t
rr
Parameter
Drain-source breakdown voltage
(Tch = 25°C)
Test conditions
I
D
= –1mA, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= –30V, V
GS
= 0V
I
D
= –1mA, V
DS
= 10V
I
D
= –4A, V
GS
= –10V
I
D
= –2A, V
GS
= –4V
I
D
= –4A, V
GS
= –10V
I
D
= –4A, V
DS
= –10V
V
DS
= –10V, V
GS
= 0V, f = 1MHz
Limits
Min.
–30
—
—
–1.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
–2.0
60
115
–0.24
6
680
180
90
10
15
50
30
–0.88
—
70
Max.
—
±0.1
–0.1
–2.5
80
180
–0.32
—
—
—
—
—
—
—
—
–1.20
78.1
—
Unit
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
V
DD
= –15V, I
D
= –2A, V
GS
= –10V, R
GEN
= R
GS
= 50Ω
I
S
= –1.7A, V
GS
= 0V
Channel to ambient
I
S
= –1.7A, dis/dt = 50A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
2.0
POWER DISSIPATION P
D
(W)
DRAIN CURRENT I
D
(A)
MAXIMUM SAFE OPERATING AREA
–3
–2
1.6
–10
1
–7
–5
–3
–2
tw = 100µs
1ms
1.2
–10
0
–7
–5
–3
–2
10ms
100ms
0.8
0.4
–10
–1
–7
–5
T
C
= 25°C
Single Pulse
DC
–3
–2 –3 –5–7
–10
0
–2 –3 –5–7
–10
1
–2 –3 –5–7
–10
2
–2
0
0
50
100
150
200
CASE TEMPERATURE T
C
(°C)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
–20
V
GS
= –10V
–8V
–6V
–5V
OUTPUT CHARACTERISTICS
(TYPICAL)
–10
V
GS
= –10V
–8V
–6V
–5V
–4V
DRAIN CURRENT I
D
(A)
–16
DRAIN CURRENT I
D
(A)
–8
–12
–4V
–6
T
C
= 25°C
Pulse Test
–3V
–8
T
C
= 25°C
Pulse Test
–4
–4
–3V
P
D
= 1.6W
–2
P
D
= 1.6W
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
0
0
–0.2
–0.4
–0.6
–0.8
–1.0
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN-SOURCE VOLTAGE V
DS
(V)
Sep.1998
MITSUBISHI Pch POWER MOSFET
FY4ADJ-03A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
–2.0
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
T
C
= 25°C
Pulse Test
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
200
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(mΩ)
T
C
= 25°C
Pulse Test
V
GS
= –4V
–1.6
160
–1.2
120
–0.8
I
D
= –8A
80
–10V
–0.4
–4A
–2A
40
0
–10
–1
–2 –3 –5–7
–10
0
–2 –3 –5–7
–10
1
–2 –3 –5–7
–10
2
DRAIN CURRENT I
D
(A)
0
0
–2
–4
–6
–8
–10
GATE-SOURCE VOLTAGE V
GS
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
–20
T
C
= 25°C
V
DS
= –10V
Pulse Test
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
10
2
V
DS
= –10V
7 Pulse Test
5
4
3
2
T
C
= 25°C
75°C
125°C
DRAIN CURRENT I
D
(A)
–12
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
–16
10
1
7
5
4
3
2
–8
–4
0
0
–2
–4
–6
–8
–10
10
0 0
–10
–2 –3 –4 –5 –7
–10
1
–2 –3 –4 –5 –7
–10
2
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
10
3
7
5
4
3
2
Ciss
SWITCHING CHARACTERISTICS
(TYPICAL)
10
2
7
5
4
3
2
t
d(on)
t
d(off)
t
f
Coss
Crss
10
2
7
5
4
3
2 T
C
h = 25°C
f = 1MH
Z
V
GS
= 0V
–2 –3 –4 –5 –7
–10
0
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
10
1
7
t
r
5
4
3 T
C
h = 25°C
2 V
DD
= –15V
V
GS
= –10V
R
GEN
= R
GS
= 50Ω
–2 –3 –4 –5 –7
–10
0
–2 –3 –4 –5 –7
–10
1
10
1 –1
–10
–2 –3 –4 –5 –7
–10
1
10
0 –1
–10
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
Sep.1998
MITSUBISHI Pch POWER MOSFET
FY4ADJ-03A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–20
SOURCE CURRENT I
S
(A)
V
GS
= 0V
Pulse Test
–10
T
C
h = 25°C
I
D
= –4A
V
DS
= –10V
–20V
–25V
–8
–16
T
C
= 125°C
75°C
25°C
–6
–12
–4
–8
–2
–4
0
0
4
8
12
16
20
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
GATE CHARGE Q
g
(nC)
SOURCE-DRAIN VOLTAGE V
SD
(V)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10
1
V
GS
= –10V
7 I
D
= –4A
5 Pulse Test
3
2
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
–4.0
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
V
DS
= –10V
I
D
= –1mA
–3.2
–2.4
10
0
7
5
3
2
–1.6
–0.8
10
–1
–50
0
50
100
150
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Z
th (ch – a)
(°C/ W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
V
GS
= 0V
I
D
= –1mA
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10
2
7 D = 1.0
5
3 0.5
2
1.2
10
1
0.2
7
5 0.1
3
2
P
DM
0.05
0.02
0.01
Single Pulse
tw
T
D
=
tw
T
1.0
0.8
10
0
7
5
3
2
0.6
0.4
–50
0
50
100
150
10
–1 –4
10
2 3 5 7
10
–3
2 3 5 7
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
2 3 5 7
10
3
PULSE WIDTH t
w
(s)
Sep.1998
CHANNEL TEMPERATURE Tch (°C)
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