VS-GB55NA120UX
www.vishay.com
Vishay Semiconductors
“High Side Chopper” IGBT SOT-227
(Ultrafast IGBT), 50 A
FEATURES
• NPT Gen 5 IGBT technology
• Square RBSOA
• HEXFRED
®
clamping diode
• Positive V
CE(on)
temperature coefficient
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
SOT-227
• Industry standard outline
• UL approved file E78996
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
1200 V
50 A at 92 °C
3.3 V
8 kHz to 60 kHz
SOT-227
High side chopper
PRIMARY CHARACTERISTICS
V
CES
I
C
DC
V
CE(on)
typical at 50 A, 25 °C
Speed
Package
Circuit configuration
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Single pulse forward current
Gate to emitter voltage
Power dissipation, IGBT
Power dissipation, diode
RMS isolation voltage
SYMBOL
V
CES
I
C
I
CM
I
LM
I
F
I
FSM
V
GE
P
D
P
D
V
ISOL
T
C
= 25 °C
T
C
= 80 °C
T
C
= 25 °C
T
C
= 80 °C
Any terminal to case, t = 1 min
T
C
= 25 °C
T
C
= 80 °C
10 ms sine or 6 ms rectangular pulse, T
J
= 25 °C
T
C
= 25 °C
T
C
= 80 °C
TEST CONDITIONS
MAX.
1200
84
57
150
150
87
59
310
± 20
431
242
338
190
2500
V
W
V
A
UNITS
V
Revision: 05-Oct-17
Document Number: 95855
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB55NA120UX
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
SYMBOL
V
BR(CES)
TEST CONDITIONS
V
GE
= 0 V, I
C
= 500 μA
V
GE
= 15 V, I
C
= 25 A
Collector to emitter voltage
V
CE(on)
V
GE
= 15 V, I
C
= 50 A
V
GE
= 15 V, I
C
= 25 A, T
J
= 125 °C
V
GE
= 15 V, I
C
= 50 A, T
J
= 125 °C
Gate threshold voltage
Temperature coefficient of
threshold voltage
Collector to emitter leakage current
Diode reverse breakdown voltage
V
GE(th)
V
GE(th)
/T
J
I
CES
V
BR
V
CE
= V
GE
, I
C
= 500 μA
V
CE
= V
GE
, I
C
= 1 mA (25 °C to 125 °C)
V
GE
= 0 V, V
CE
= 1200 V
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 125 °C
I
R
= 1 mA
I
F
= 25 A, V
GE
= 0 V
Diode forward voltage drop
V
FM
I
F
= 50 A, V
GE
= 0 V
I
F
= 25 A, V
GE
= 0 V, T
J
= 125 °C
I
F
= 50 A, V
GE
= 0 V, T
J
= 125 °C
Diode reverse leakage current
Gate to emitter leakage current
I
RM
I
GES
V
R
= 1200 V
T
J
= 125 °C, V
R
= 1200 V
V
GE
= ± 20 V
MIN.
1200
-
-
-
-
4.0
-
-
-
1200
-
-
-
-
-
-
-
TYP.
-
2.5
3.3
3.0
4.03
5.5
-12.9
8
0.15
-
2.11
2.72
2.04
2.83
4
0.8
-
MAX.
-
2.8
-
-
-
7.1
-
50
-
-
2.42
-
-
-
50
-
± 200
μA
mA
nA
V
mV/°C
μA
mA
V
V
UNITS
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
SYMBOL
Q
g
Q
ge
Q
gc
E
on
E
off
E
tot
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
RBSOA
t
rr
I
rr
Q
rr
t
rr
I
rr
Q
rr
I
F
= 50 A, dI
F
/dt = 200 A/μs, V
R
= 200 V,
T
J
= 125 °C
I
F
= 50 A, dI
F
/dt = 200 A/μs, V
R
= 200 V
T
J
= 150 °C, I
C
= 150 A, R
g
= 22
V
GE
= 15 V to 0 V, V
CC
= 900 V,
V
P
= 1200 V
-
-
-
-
-
-
I
C
= 50 A, V
CC
= 600 V,
V
GE
= 15 V, R
g
= 4.7
L = 500 μH, T
J
= 125 °C
I
C
= 50 A, V
CC
= 600 V,
V
GE
= 15 V, R
g
= 4.7
L = 500 μH, T
J
= 25 °C
Energy losses
include tail and
diode recovery
I
C
= 50 A, V
CC
= 600 V, V
GE
= 15 V
TEST CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
400
43
187
1.87
0.83
2.7
3.43
1.29
4.72
147
35
186
119
Fullsquare
129
11
710
208
17
1768
-
-
-
-
-
-
ns
A
nC
ns
A
nC
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
mJ
nC
UNITS
Revision: 05-Oct-17
Document Number: 95855
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB55NA120UX
www.vishay.com
Vishay Semiconductors
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
Flat, greased surface
Torque to terminal
Torque to heatsink
SOT-227
MIN.
-40
-
-
-
-
-
-
TYP.
-
-
-
0.05
30
-
-
MAX.
150
0.29
0.37
-
-
1.1 (9.7)
1.8 (15.9)
g
Nm (lbf.in)
Nm (lbf.in)
°C/W
UNITS
°C
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction and storage temperature range
Junction to case
Case to heatsink
Weight
Mounting torque
Case style
IGBT
Diode
Allowable Case Temperature (°C)
160
140
120
100
80
60
40
20
0
0
10
20
30
40
50
60
70
80
90
DC
200
175
150
125
I
C
(A)
T
J
= 25 °C
100
75
T
J
= 125 °C
50
25
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
I
C
- Continuous Collector Current (A)
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
V
CE
(V)
Fig. 3 - Typical IGBT Output Characteristics, V
GE
= 15V
1000
1
100
0.1
T
J
= 125 °C
0.01
10
1
I
CES
(mA)
I
C
(A)
0.001
0.1
T
J
= 25 °C
0.01
1
10
100
1000
10 000
0.0001
200
400
600
800
1000
1200
V
CE
(V)
Fig. 2 - IGBT Reverse Bias SOA
T
J
= 150 °C, V
GE
= 15 V
V
CES
(V)
Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current
Revision: 05-Oct-17
Document Number: 95855
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB55NA120UX
www.vishay.com
Vishay Semiconductors
200
175
7.5
6.5
T
J
= 25 °C
5.5
150
125
V
GEth
(V)
I
F
(A)
4.5
3.5
2.5
1.5
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
T
J
= 125 °C
100
T
J
= 25 °C
75
50
25
0
0
1.0
2.0
3.0
4.0
T
J
= 125 °C
5.0
6.0
7.0
I
C
(mA)
Fig. 5 - Typical IGBT Threshold Voltage
V
FM
(V)
Fig. 8 - Typical Diode Forward Characteristics
6
4.0
5
100 A
3.0
Energy (mJ)
V
CE
(V)
4
50 A
2.0
E
on
3
25 A
1.0
E
off
2
10
30
50
70
90
110
130
150
0
10
20
30
40
50
T
J
(°C)
Fig. 6 - Typical IGBT Collector to Emitter Voltage vs. Junction
Temperature, V
GE
= 15 V
I
C
(A)
Fig. 9 - Typical IGBT Energy Losses vs. I
C
T
J
= 125 °C, V
CC
= 600 V, V
GE
= 15 V, L = 500 μH, R
g
= 4.7
160
1
Allowable Case Temperature (°C)
140
120
100
80
60
40
20
0
0
20
40
60
80
100
0.01
10
20
30
40
50
DC
Switching
Time (ns)
t
d(off)
t
d(on)
0.1
t
f
t
r
I
F
- Continuous Forward Current (A)
Fig. 7 - Maximum Diode Continuous Forward Current vs.
Case Temperature
I
C
(A)
Fig. 10 - Typical IGBT Switching Time vs. I
C
T
J
= 125 °C, V
CC
= 600 V, V
GE
= 15 V, L = 500 μH, R
g
= 4.7
Revision: 05-Oct-17
Document Number: 95855
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB55NA120UX
www.vishay.com
Vishay Semiconductors
270
250
230
210
8
7
6
Energy (mJ)
5
4
3
2
1
0
0
10
20
30
40
50
E
off
E
on
190
t
rr
(ns)
T
J
= 125 °C
170
150
130
110
90
70
100
1000
T
J
= 25 °C
R
g
(Ω)
Fig. 11 - Typical IGBT Energy Losses vs. R
g
T
J
= 125 °C, I
C
= 50 A, V
CC
= 600 V, V
GE
= 15 V, L = 500 μH
dI
F
/dt (A/μs)
Fig. 13 - Typical t
rr
Diode vs. dI
F
/dt
V
R
= 200 V, I
F
= 50 A
1000
40
35
Switching
Time (ns)
t
d(off)
t
d(on)
100
30
25
T
J
= 125 °C
I
rr
(A)
t
f
20
15
T
J
= 25 °C
t
r
10
5
10
0
10
20
30
40
50
0
100
1000
R
g
(Ω)
Fig. 12 - Typical IGBT Switching Time vs. R
g
T
J
= 125 °C, I
C
= 50 A, V
CC
= 600 V, V
GE
= 15 V, L = 500 μH
dI
F
/dt (A/μs)
Fig. 14 - Typical I
rr
Diode vs. dI
F
/dt
V
R
= 200 V, I
F
= 50 A
2650
2400
2150
1900
T
J
= 125 °C
Q
rr
(nC)
1650
1400
1150
900
650
400
100
1000
T
J
= 25 °C
dI
F
/dt (A/μs)
Fig. 15 - Typical Q
rr
Diode vs. dI
F
/dt,
V
R
= 200 V, I
F
= 50 A
Revision: 05-Oct-17
Document Number: 95855
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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