Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-0286
Features
• Cascadable 50
Ω
Gain Block
• 3 dB Bandwidth:
DC to 2.5 GHz
• 12.0 dB Typical Gain at
1.0 GHz
• Unconditionally Stable
(k>1)
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available
[1]
Note:
1. Refer to PACKAGING section “Tape-
and-Reel Packaging for Surface
Mount Semiconductors”.
Description
The MSA-0286 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for use as a
general purpose 50
Ω
gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in commercial and
industrial applications.
The MSA-series is fabricated using
HP’s 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
86 Plastic Package
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R
bias
V
CC
> 7 V
RFC (Optional)
4
C
block
3
IN
1
MSA
C
block
OUT
V
d
= 5 V
2
5965-9564E
6-286
MSA-0286 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum
[1]
60 mA
325 mW
+13 dBm
150°C
–65 to 150°C
Thermal Resistance
[2,4]
:
θ
jc
= 105°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 9.5 mW/°C for T
C
> 116°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
Electrical Specifications
[1]
, T
A
= 25°C
Symbol
G
P
∆G
P
f
3 dB
VSWR
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
Parameters and Test Conditions: I
d
= 25 mA, Z
O
= 50
Ω
Power Gain (|S
21
|
2
)
Gain Flatness
3 dB Bandwidth
Input VSWR
Output VSWR
50
Ω
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
f = 0.1 to 3.0 GHz
f = 0.1 to 3.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 0.1 GHz
f = 1.0 GHz
f = 0.1 to 1.6 GHz
Units
dB
Min.
10.0
Typ.
12.5
12.0
±
0.6
2.5
1.5:1
1.4:1
Max.
dB
GHz
dB
dBm
dBm
psec
V
mV/°C
4.0
6.5
4.5
17.0
140
5.0
–8.0
6.0
Note:
1. The recommended operating current range for this device is 18 to 40 mA. Typical performance as a function of current
is on the following page.
Part Number Ordering Information
Part Number
MSA-0286-TR1
MSA-0286-BLK
No. of Devices
1000
100
Container
7" Reel
Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-287
MSA-0286 Typical Scattering Parameters (Z
O
= 50
Ω,
T
A
= 25°C, I
d
= 25 mA)
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
0.1
0.2
0.4
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
.10
.10
.10
.09
.08
.08
.06
.08
.14
.21
.29
.36
.50
171
161
144
129
119
108
111
141
150
142
132
121
101
12.5
12.5
12.4
12.2
12.1
11.9
11.3
10.5
9.6
8.6
7.5
6.4
4.1
4.22
4.20
4.16
4.09
4.01
3.91
3.67
3.35
3.01
2.68
2.37
2.09
1.61
175
170
159
149
139
129
106
84
67
48
30
15
–12
–18.5
–18.3
–18.2
–18.0
–18.0
–17.4
–16.5
–15.7
–14.8
–14.3
–14.0
–13.5
–13.3
.119
.121
.122
.126
.127
.135
.149
.164
.182
.194
.200
.211
.216
1
3
6
6
9
8
12
11
9
5
1
–3
–12
.16
.16
.15
.15
.14
.14
.11
.11
.12
.13
.14
.16
.20
–5
–11
–24
–36
–48
–62
–99
–141
–176
155
140
134
132
A model for this device is available in the DEVICE MODELS section.
Typical Performance, T
A
= 25°C
(unless otherwise noted)
14
12
10
G
p
(dB)
8
6
4
10
2
Gain Flat to DC
0
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
0
0
1
2
3
V
d
(V)
4
5
6
I
d
(mA)
I
d
= 18 mA
I
d
= 25 mA
I
d
= 40 mA
40
T
C
= +85°C
T
C
= +25°C
30 T = –25°C
C
G
p
(dB)
13
12
11
8
NF
20
P
1 dB
(dBm)
7
6
5
4
3
–25
0
+25
+55
+85
TEMPERATURE (°C)
P
1 dB
7
6
5
4
3
NF (dB)
G
P
8
Figure 1. Typical Power Gain vs.
Frequency.
Figure 2. Device Current vs. Voltage.
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I
d
=25mA.
12
10
I
d
= 40 mA
7.5
7.0
P
1 dB
(dBm)
8
NF (dB)
I
d
= 25 mA
6.0
2
I
d
= 18 mA
0
0.1
5.5
0.2 0.3
0.5
1.0
2.0
4.0
0.1
0.2 0.3
0.5
FREQUENCY (GHz)
I
d
= 18 mA
I
d
= 25 mA
I
d
= 40 mA
1.0
2.0
6
4
6.5
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 5. Noise Figure vs. Frequency.
6-288
86 Plastic Package Dimensions
0.51
±
0.13
(0.020
±
0.005)
GROUND
4
RF INPUT
1
A02
45°
RF OUTPUT
AND DC BIAS
C
L
3
2.34
±
0.38
(0.092
±
0.015)
2
GROUND
2.67
±
0.38
(0.105
±
0.15)
1.52
±
0.25
(0.060
±
0.010)
5° TYP.
0.203
±
0.051
(0.006
±
0.002)
0.66
±
0.013
(0.026
±
0.005)
0.30 MIN
(0.012 MIN)
8° MAX
0° MIN
2.16
±
0.13
(0.085
±
0.005)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
6-289
单片机
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