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CY7C106L-15VC

产品描述Standard SRAM, 256KX4, 15ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, SOJ-28
产品类别存储    存储   
文件大小252KB,共9页
制造商Cypress(赛普拉斯)
下载文档 详细参数 选型对比 全文预览

CY7C106L-15VC概述

Standard SRAM, 256KX4, 15ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, SOJ-28

CY7C106L-15VC规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Cypress(赛普拉斯)
零件包装代码SOJ
包装说明SOJ,
针数28
Reach Compliance Codecompliant
ECCN代码3A991.B.2.B
最长访问时间15 ns
JESD-30 代码R-PDSO-J28
JESD-609代码e0
长度18.415 mm
内存密度1048576 bit
内存集成电路类型STANDARD SRAM
内存宽度4
湿度敏感等级1
功能数量1
端子数量28
字数262144 words
字数代码256000
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织256KX4
封装主体材料PLASTIC/EPOXY
封装代码SOJ
封装形状RECTANGULAR
封装形式SMALL OUTLINE
并行/串行PARALLEL
峰值回流温度(摄氏度)220
认证状态Not Qualified
座面最大高度3.7592 mm
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层TIN LEAD
端子形式J BEND
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度10.16 mm
Base Number Matches1

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006
CY7C106
CY7C1006
256K x 4 Static RAM
Features
• High speed
— t
AA
= 12 ns
• CMOS for optimum speed/power
• Low active power
— 910 mW
• Low standby power
— 275 mW
• 2.0V data retention (optional)
100
µW
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
an active LOW output enable (OE), and three-state drivers.
These devices have an automatic power-down feature that re-
duces power consumption by more than 65% when the devic-
es are deselected.
Writing to the devices is accomplished by taking chip enable
(CE) and write enable (WE) inputs LOW. Data on the four I/O
pins (I/O
0
through I/O
3
) is then written into the location speci-
fied on the address pins (A
0
through A
17
).
Reading from the devices is accomplished by taking chip en-
able (CE) and output enable (OE) LOW while forcing write en-
able (WE) HIGH. Under these conditions, the contents of the
memory location specified by the address pins will appear on
the four I/O pins.
The four input/output pins (I/O
0
through I/O
3
) are placed in a
high-impedance state when the devices are deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE and WE LOW).
The CY7C106 is available in a standard 400-mil-wide SOJ; the
CY7C1006 is available in a standard 300-mil-wide SOJ.
Functional Description
The CY7C106 and CY7C1006 are high-performance CMOS
static RAMs organized as 262,144 words by 4 bits. Easy mem-
ory expansion is provided by an active LOW chip enable (CE),
Logic Block Diagram
Pin Configuration
SOJ
Top View
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
10
CE
OE
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
INPUT BUFFER
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
ROW DECODER
SENSE AMPS
I/O
3
I/O
2
I/O
1
I/O
0
V
CC
A
17
A
16
A
15
A
14
A
13
A
12
A
11
NC
I/O
3
I/O
2
I/O
1
I/O
0
WE
C106–2
512 x 512 x 4
ARRAY
COLUMN
DECODER
POWER
DOWN
CE
WE
OE
C106–1
Selection Guide
Maximum Access Time (ns)
Maximum Operating
Current (mA)
Maximum Standby
Current (mA)
7C106-12
7C1006-12
12
165
50
7C106-15
7C1006-15
15
155
30
7C106-20
7C1006-20
20
145
30
7C106-25
7C1006-25
25
130
30
7C106-35
35
125
25
Cypress Semiconductor Corporation
Document #: 38-05033 Rev. **
A
0
A
10
A
11
A
12
A
13
A
14
A
15
A
16
A
17
3901 North First Street
San Jose
CA 95134
• 408-943-2600
Revised July 9, 1998

CY7C106L-15VC相似产品对比

CY7C106L-15VC CY7C1006L-15VC CY7C1006L-20VC CY7C106L-12VC CY7C106L-20VC CY7C106L-25VC CY7C1006L-25VC CY7C106L-35VC CY7C1006L-12VC
描述 Standard SRAM, 256KX4, 15ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, SOJ-28 Standard SRAM, 256KX4, 15ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Standard SRAM, 256KX4, 20ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Standard SRAM, 256KX4, 12ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, SOJ-28 Standard SRAM, 256KX4, 20ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, SOJ-28 Standard SRAM, 256KX4, 25ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, SOJ-28 Standard SRAM, 256KX4, 25ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28 Standard SRAM, 256KX4, 35ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, SOJ-28 Standard SRAM, 256KX4, 12ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOJ-28
零件包装代码 SOJ SOJ SOJ SOJ SOJ SOJ SOJ SOJ SOJ
包装说明 SOJ, SOJ, SOJ, SOJ, SOJ, SOJ, SOJ, SOJ, SOJ,
针数 28 28 28 28 28 28 28 28 28
Reach Compliance Code compliant compliant compliant compliant compliant unknown compliant unknown compliant
ECCN代码 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B EAR99 EAR99 EAR99 3A991.B.2.B
最长访问时间 15 ns 15 ns 20 ns 12 ns 20 ns 25 ns 25 ns 35 ns 12 ns
JESD-30 代码 R-PDSO-J28 R-PDSO-J28 R-PDSO-J28 R-PDSO-J28 R-PDSO-J28 R-PDSO-J28 R-PDSO-J28 R-PDSO-J28 R-PDSO-J28
长度 18.415 mm 17.907 mm 17.907 mm 18.415 mm 18.415 mm 18.415 mm 17.907 mm 18.415 mm 17.907 mm
内存密度 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit
内存集成电路类型 STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
内存宽度 4 4 4 4 4 4 4 4 4
功能数量 1 1 1 1 1 1 1 1 1
端子数量 28 28 28 28 28 28 28 28 28
字数 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words 262144 words
字数代码 256000 256000 256000 256000 256000 256000 256000 256000 256000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 256KX4 256KX4 256KX4 256KX4 256KX4 256KX4 256KX4 256KX4 256KX4
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOJ SOJ SOJ SOJ SOJ SOJ SOJ SOJ SOJ
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 3.7592 mm 3.556 mm 3.556 mm 3.7592 mm 3.7592 mm 3.7592 mm 3.556 mm 3.7592 mm 3.556 mm
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 J BEND J BEND J BEND J BEND J BEND J BEND J BEND J BEND J BEND
端子节距 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
宽度 10.16 mm 7.5 mm 7.5 mm 10.16 mm 10.16 mm 10.16 mm 7.5 mm 10.16 mm 7.5 mm
是否无铅 含铅 含铅 含铅 含铅 含铅 - 含铅 - 含铅
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 - 不符合 - 不符合
厂商名称 Cypress(赛普拉斯) - - - Cypress(赛普拉斯) Cypress(赛普拉斯) Cypress(赛普拉斯) Cypress(赛普拉斯) Cypress(赛普拉斯)
JESD-609代码 e0 e0 e0 e0 e0 - e0 - e0
湿度敏感等级 1 1 1 1 1 - 1 - 1
峰值回流温度(摄氏度) 220 220 220 220 220 - 220 - 220
端子面层 TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD - TIN LEAD - TIN LEAD
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED - NOT SPECIFIED

 
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