Infrared light emitting diode, side-view type
SIM-22ST
The SIM-22ST is a GaAs infrared light emitting diode housed in side emission. High output with
1.5
lens.
Applications
Light source for sensors
Features
1) Compact package (4.7x4.6 mm) with lens.
2) High efficiency, high output.
3) Emission spectrum well suited to silicon detectors
(
P
= 950 nm).
4) Good current-optical output linearity.
5) Long life, high reliability.
Dimensions
(Unit : mm)
2.54
±
0.1
Notes:
1.
Tolerances are
±
0.2 unless
otherwise indicated.
2. Value in parenthese is size
at base of leads.
1.0
4.1
Gate remainder
0.3Max.
4.6
±
0.1
1.8
±
0.05
1.9
0.15
R0.5
R0.75
2-C0.7
1.5
4.7
±
0.1
2.8
2−0.65
2−0.45
R0.5
1
(2.54)
2
0.64
1 Cathode
12Min.
1.0
0.40
2 Anode
Absolute
maximum ratings
(Ta=25C)
Parameter
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
Symbol
I
F
V
R
P
D
I
FP
∗
Topr
Tstg
Limits
50
5
80
0.5
−25
to +85
−30
to +100
Unit
mA
V
mW
A
°C
°C
∗
Pulse width = 0.1ms, duty ratio 1%
Electrical
and optical characteristics
(Ta=25C)
Parameter
Emitting strength
Emitting strength
Forward voltage
Reverse current
Peak light emitting wavelength
Spectral line half width
Half-viewing angle
Response time
Cut-off frequency
Symbol
I
E
I
E
V
F
I
R
λ
P
Δλ
θ
1/2
tr
fc
tf
Min.
−
0.48
−
−
−
−
−
−
−
Typ.
0.8
1.3
1.3
−
950
40
Max.
−
1.94
1.6
10
−
−
−
−
−
Unit
mW/sr
mA
V
μA
nm
nm
deg
μs
MHz
I
F
=10mA
I
F
=10mA
∗
I
F
=50mA
V
R
=5V
I
F
=10mA
I
F
=20mA
I
F
=50mA
I
F
=50mA
I
F
=50mA
Conditions
±
30
1.0
1.0
∗
According to our measurement procedures.
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c
○
2010 ROHM Co., Ltd. All rights reserved.
1/2
2010.06 - Rev.B
SIM-22ST
Electrical
and optical characteristic curves
70
Data Sheet
14
EMITTING STRENGTH I : I
E
(mW / Sr)
FORWARD CURRENT : I
F
(mA)
FORWARD CURRENT : I
F
(
mA)
50
60
50
40
30
20
10
0
0
−25°C
0
°C
25
°C
50
°C
75
°C
12
10
8
6
4
2
0
0
40
30
20
10
0
−20
0
20
40
60
80
100
AMBIENT TEMPERATURE : Ta(
°C)
0.4
0.8
1.2
1.6
10
20
30
40
50
FORWARD VOLTAGE : V
F
(
V)
FORWARD CURRENT : I
F
(mA)
Fig.1 Forward current falloff
Fig.2 Forward current vs. forward voltage
Fig.3 Emitting strength vs.
forward current
RELATIVE EMITTING STRENGTH : I
E
(%)
100
200
RELATIVE OPTICAL OUTPUT : P
O
(%)
80
100
60
50
40
20
20
10
−25
0
25
50
75
100
0
900
920
940
960
980
1000
AMBIENT TEMPERATURE : Ta (
°C)
OPTICAL WAVELENGTH :
λ
(
nm)
Fig.4 Relative emitting strength vs.
ambient temperature
Fig.5 Wavelength
20°
30°
40°
50°
10°
0°
100
RELATIVE EMITTING STRENGTH (%)
80
60
60°
40
70°
80°
90°
100
20
80
60
40
20
0
0
10° 20° 30° 40° 50° 60° 70° 80° 90°
ANGULAR DISPLACEMENT :
θ
(deg)
RELATIVE EMITTING STRENGTH (%)
Fig. 6 Directional pattern
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○
2010 ROHM Co., Ltd. All rights reserved.
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2010.06 - Rev.B
Notice
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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However, should you incur any damage arising from any inaccuracy or misprint of such
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