1206 Package Phototransistor With Inner Lens
PT11-21C/L41/TR8
Features
․Fast
response time
․High
photo sensitivity
․Small
junction capacitance
․Package
in 8mm tape on 7” diameter reel
․Pb
free
․The
product itself will remain within RoHS compliant version.
․Compliance
with EU REACH
Descriptions
․PT11-21C/L41/TR8
is a phototransistor in miniature SMD package
which is molded in a water clear plastic with flat top view lens.
The device is Spectrally matched to visible and infrared emitting diode.
Applications
․Automatic
door sensor
․Copier
․Game
machine
․Infrared
applied systm
Device Selection Guide
Part Category
PT
Chip Material
Silicon
Lens Color
Water clear
1
Copyright © 2015, Everlight All Rights Reserved. Release Date : 2015/9/26. Issue No:
DPT-0000288.
Rev:4
www.everlight.com
Revision
:4
Release Date:2015-10-16 11:09:14.0
Expired Period: Forever
LifecyclePhase:
Data Sheet
1206 Package Phototransistor With Inner Lens
PT11-21C/L41/TR8
Package Dimensions
Notes:
1.All dimensions are in millimeters
2.Tolerances unless dimensions ±0.1mm
3.Suggested pad dimension is just for reference only
.Please
modify the pad dimension based on individual need
2
Copyright © 2015, Everlight All Rights Reserved. Release Date: 2015/9/26. Issue No:
DPT-0000288.
Rev:4
www.everlight.com
Revision
:4
Release Date:2015-10-16 11:09:14.0
Expired Period: Forever
LifecyclePhase:
Data Sheet
1206 Package Phototransistor With Inner Lens
PT11-21C/L41/TR8
Absolute Maximum Ratings (Ta=25℃)
Parameter
Collector-Emitter Voltage
Emitter-Collector-Voltage
Collector Current
Operating Temperature
Storage Temperature
Soldering Temperature *1
Power Dissipation at(or below)
25℃Free Air Temperature
Notes:
*1:Soldering time≦5 seconds.
Symbol
V
CEO
V
ECO
I
C
T
opr
T
stg
T
sol
P
d
Rating
30
5
20
-25 ~ +85
-40 ~ +85
260
75
Units
V
V
mA
℃
℃
℃
mW
Electro-Optical Characteristics (Ta=25℃)
Parameter
Rang Of Spectral Bandwidth
Wavelength Of Peak Sensitivity
Collector-Emitter Breakdown
Voltage
Emitter-Collector Breakdown
Voltage
Collector-Emitter Saturation
Voltage
Collector Dark Current
On State Collector Current
Symbol
λ
0.5
λ
P
BV
CEO
BV
ECO
V
CE(sat)
I
CEO
I
C(ON)
Condition
---
---
I
C
=100μA
Ee=0mW/cm
2
I
E
=100μA
Ee=0mW/cm
2
I
C
=2mA
Ee=1m W/cm
2
V
CE
=20V
Ee=0mW/cm
2
V
CE
=5V
Ee=1mW /cm
2
Min
530
---
30
5
---
---
0.3
Typ
---
940
---
---
---
---
0.8
Max
1030
---
---
---
0.4
100
---
Unit
nm
nm
V
V
V
nA
mA
3
Copyright © 2015, Everlight All Rights Reserved. Release Date: 2015/9/26. Issue No:
DPT-0000288.
Rev:4
www.everlight.com
Revision
:4
Release Date:2015-10-16 11:09:14.0
Expired Period: Forever
LifecyclePhase:
Data Sheet
1206 Package Phototransistor With Inner Lens
PT11-21C/L41/TR8
Typical Electro-Optical Characteristics Curves
Fig.1 Spectral Sensitivity
Fig.2 Collector Current vs Irradiance
1.0
Ta=25
C
O
10
C
1
0.5
0.1
0.01
0
400 500 600 700 800 900 1000 1100
1200
0.001
0.01
0.1
1
2
10
Fig.3 Collector Current vs.
Collector-Emitter Voltage
Precautions For Use
4
Copyright © 2015, Everlight All Rights Reserved. Release Date: 2015/9/26. Issue No:
DPT-0000288.
Rev:4
www.everlight.com
Revision
:4
Release Date:2015-10-16 11:09:14.0
Expired Period: Forever
LifecyclePhase:
Data Sheet
1206 Package Phototransistor With Inner Lens
PT11-21C/L41/TR8
1. Over-current-proof
Customer must apply resistors for protection, otherwise slight voltage shift will cause big
current change (Burn out will happen).
2. Storage
2.1 Do not open moisture proof bag before the products are ready to use.
2.2 Before opening the package, the Phototransistor should be kept at 10℃~30℃ and
90%RH or less.
2.3 The Phototransistor suggested be used within one year.
2.4 After opening the package, the devices must be stored at 10°C~30°C and
60%RH, and
used within 168 hours (floor life). If unused Phototransistor remain, it should be stored in
moisture proof packages.
2.5 If the moisture absorbent material (desiccant
material)
has faded or unopened bag has
exceeded the shelf life or devices (out of bag) have exceeded the floor life, baking
treatment is required.
2.6 If baking is required, refer to IPC/JEDEC J-STD-033 for bake procedure or recommend
the following conditions:
96 hours at 60°C ± 5°C and < 5 % RH (reeled/tubed/loose units)
3. Soldering Condition
3.1 Pb-free solder temperature profile
3.2 Reflow soldering should not be done more than two times.
3.3 When soldering, do not put stress on the Phototransistor during heating.
3.4 After soldering, do not warp the circuit board.
5
Copyright © 2015, Everlight All Rights Reserved. Release Date: 2015/9/26. Issue No:
DPT-0000288.
Rev:4
www.everlight.com
Revision
:4
Release Date:2015-10-16 11:09:14.0
Expired Period: Forever
LifecyclePhase:
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