RPI-130
Photointerrupter, Ultraminiature DIP type
Absolute maximum ratings (Ta=25°C)
Parameter
Input (LED)
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Symbol
I
F
V
R
P
D
V
CEO
V
ECO
I
C
P
C
Topr
Tstg
Limits
50
5
80
30
4.5
30
80
−25
to
+85
−30
to
+85
Unit
mA
V
mW
V
V
mA
mW
Applications
DSC(Digital steal camera)
DVC(Digital video camera)
Digital handy phone
Output
photo-
transistor
)
Features
1) Ultraminiature DIP type.
2) Gap 1.2mm.
(
°C
°C
Electrical and optical characteristics (Ta=25°C)
Parameter
Output Input
Infrared Transfer
characteristics charac- charac-
light
teristics teristics
emitter
diode
Symbol
V
F
I
R
I
CEO
Min.
Typ.
Max.
Unit
V
μA
μA
nm
mA
V
μs
μs
MHz
nm
μs
nm
V
CE
=
5V, I
F
=
10mA
I
F
=
20mA, I
C
=
0.1mA
V
CC
=
5V, I
F
=
20mA, R
L
=
100Ω
I
F
=
50mA
I
F
=
20mA
V
R
=
5V
V
CE
=
10V
Conditions
Forward voltage
Reverse current
Dark current
Peak sensitivity wavelength
Collector current
Rise time
Fall time
−
−
−
−
2
−
−
−
−
−
−
−
1.45
−
−
800
−
−
10
10
1
850
10
800
1.75
10
0.1
−
10
0.4
−
−
−
−
−
−
λ
P
I
C
−
Collector-emitter saturation voltage
V
CE(sat)
Response time
tr
tf
f
C
Cut-off frequency
Peak light emitting wavelength
Response time
Maximum sensitivity wavelength
λ
P
tr tf
∗
Non-coherent Infrared light emitting diode used.
Photo
transistor
V
CC
=
5V, I
C
=
1mA, R
L
=
100Ω
∗
This product is not designed to be protected against electromagnetic wave.
λ
P
−
Electrical and optical characteristics curves
RELATIVE COLLECTOR CURRENT : Ic
(%)
120
FORWARD CURRENT : I
F
(
mA)
FORWARD CURRENT : I
F
(
mA
)
50
40
30
20
10
0
0
0.5
1
1.5
DISTANCE : d
(mm)
2
20
18
16
14
12
10
8
6
4
2
0
−20
0
20
40
60
80
100
0
0.5
1
1.5
2
AMBIENT TEMPERATURE : Ta (°C)
FORWARD VOLTAGE : V
F
(
V)
−25°C
0°C
25°C
50°C
75°C
100
80
60
40
20
0
Fig.1 Relative output current vs.
distance ( )
RELATIVE COLLECTOR CURRENT : Ic
(%)
POWER DISSIPATION /
COLLECTOR POWER DISSIPTION:P
D
/P
C
(mW)
120
100
80
60
40
20
0
0
0.5
1
1.5
Fig.2 Forward current falloff
RELATIVE COLLECTOR CURRENT : Ic (%)
140
120
100
80
60
40
20
0
-25
Fig.3 Forward current vs. forward
voltage
120
100
P
D
P
C
80
60
40
20
0
V
CE=
5V
I
F=
10mA
−20
0
20
40
60
80
100
0
25
50
75
100
DISTANCE : d (mm)
AMBIENT TEMPERATURE : Ta
(
°C
)
AMBIENT TEMPERATURE : Ta (°C)
Fig.4 Relative output current vs.
distance ( )
Fig.5 Power dissipation / collector power
dissipation vs. ambient temperature
Fig.6 Relative output vs. ambient
temperature
Dimensions (Unit : mm)
0.7
0.4
A
Note) 1. Unspecified tolerance shall be ± 0.2.
2. Dimension in parenthesis are shown for
2.0
A'
3. 1
1. 5
1. 2
2- C0. 4
(1.1)
1. 4
0.7
reference.
2. 0
4 - 0. 15
4- 0. 3
( 2. 0)
( 1. 3)
Internal connection diagram
( 0. 3)
1.4
( 0. 5)
Anode
Colletor
( 1 .5 )
②
0.5
③
( 0. 65)
( 0. 35)
1.7
(Optical center)
①
④
Cathode
Emitter
A - A '
Cross section
20
COLLECTOR CURRENT : I
C
(mA)
18
RESPONSE TIME : t
r
(
μs)
16
14
12
10
8
6
4
2
0
0
10
20
30
40
50
FORWARD CURRENT : I
F
(mA)
800
700
600
tr
tf
DARK CURRENT : I
CEO
(nA)
V
CC
=
5V
I
C
=0.1mA
1000
100
V
CE
=30V
V
CE
=20V
V
CE
=10V
500
400
300
200
100
0
1
10
LOAD RESISTANCE : RL
(kΩ)
100
10
1
V
CE
=5V
Ta=25℃
0.1
−25
0
25
50
75
100
AMBIENT TEMPERATURE : Ta
(
°C
)
Fig.7 Collector current vs.
forward current
25
COLLECTOR CURRENT : Ic(mA)
I
F
=50mA
20
I
F
=40mA
15
I
F
=30mA
Fig.8 Response time vs.
load resistance
Input
V
CC
Fig.9 Dark current vs.
ambient temperature
Input
Output
R
L
90%
10%
I
F
=20mA
10
I
F
=10mA
5
t
d
: Delay time
Output
t
d
t
r
t
f
t
r
: Rise time (time for output current to rise from
0
0
2
4
6
8
10
CORRECTOR TO EMITTER VOLTAGE : VCE(V)
10% to 90% of peak current)
t
f
: Fall time (time for output current to fall from 90%
to 10% of peak current)
Fig.11 Output characteristics
Fig.12 Response time measurement circuit
2010.10 Rev.C
Notice
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R1010A