电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

RPI-130

产品描述Clock Generators u0026 Support Products Clock Generator 10 Interger+Fractional
产品类别光电子/LED    光电   
文件大小132KB,共4页
制造商ROHM(罗姆半导体)
官网地址https://www.rohm.com/
标准
下载文档 详细参数 全文预览

RPI-130在线购买

供应商 器件名称 价格 最低购买 库存  
RPI-130 - - 点击查看 点击购买

RPI-130概述

Clock Generators u0026 Support Products Clock Generator 10 Interger+Fractional

RPI-130规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
包装说明ULTRA MINIATURE, DIP-4
Reach Compliance Codecompliant
Coll-Emtr Bkdn Voltage-Min30 V
配置SINGLE
最大暗电源100 nA
最大正向电流0.05 A
间隙大小1.2 mm
JESD-609代码e2
安装特点THROUGH HOLE MOUNT
功能数量1
最大通态电流0.01 A
最大通态电压30 V
最高工作温度85 °C
最低工作温度-25 °C
光电设备类型TRANSISTOR OUTPUT SLOTTED SWITCH
输出电路类型Transistor
标称槽宽1.2 mm
表面贴装NO
端子面层Tin/Copper (Sn/Cu)
Base Number Matches1

文档预览

下载PDF文档
RPI-130
Photointerrupter, Ultraminiature DIP type
Absolute maximum ratings (Ta=25°C)
Parameter
Input (LED)
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
Symbol
I
F
V
R
P
D
V
CEO
V
ECO
I
C
P
C
Topr
Tstg
Limits
50
5
80
30
4.5
30
80
−25
to
+85
−30
to
+85
Unit
mA
V
mW
V
V
mA
mW
Applications
DSC(Digital steal camera)
DVC(Digital video camera)
Digital handy phone
Output
photo-
transistor
)
Features
1) Ultraminiature DIP type.
2) Gap 1.2mm.
(
°C
°C
Electrical and optical characteristics (Ta=25°C)
Parameter
Output Input
Infrared Transfer
characteristics charac- charac-
light
teristics teristics
emitter
diode
Symbol
V
F
I
R
I
CEO
Min.
Typ.
Max.
Unit
V
μA
μA
nm
mA
V
μs
μs
MHz
nm
μs
nm
V
CE
=
5V, I
F
=
10mA
I
F
=
20mA, I
C
=
0.1mA
V
CC
=
5V, I
F
=
20mA, R
L
=
100Ω
I
F
=
50mA
I
F
=
20mA
V
R
=
5V
V
CE
=
10V
Conditions
Forward voltage
Reverse current
Dark current
Peak sensitivity wavelength
Collector current
Rise time
Fall time
2
1.45
800
10
10
1
850
10
800
1.75
10
0.1
10
0.4
λ
P
I
C
Collector-emitter saturation voltage
V
CE(sat)
Response time
tr
tf
f
C
Cut-off frequency
Peak light emitting wavelength
Response time
Maximum sensitivity wavelength
λ
P
tr tf
Non-coherent Infrared light emitting diode used.
Photo
transistor
V
CC
=
5V, I
C
=
1mA, R
L
=
100Ω
This product is not designed to be protected against electromagnetic wave.
λ
P
Electrical and optical characteristics curves
RELATIVE COLLECTOR CURRENT : Ic
(%)
120
FORWARD CURRENT : I
F
(
mA)
FORWARD CURRENT : I
F
(
mA
)
50
40
30
20
10
0
0
0.5
1
1.5
DISTANCE : d
(mm)
2
20
18
16
14
12
10
8
6
4
2
0
−20
0
20
40
60
80
100
0
0.5
1
1.5
2
AMBIENT TEMPERATURE : Ta (°C)
FORWARD VOLTAGE : V
F
(
V)
−25°C
0°C
25°C
50°C
75°C
100
80
60
40
20
0
Fig.1 Relative output current vs.
distance ( )
RELATIVE COLLECTOR CURRENT : Ic
(%)
POWER DISSIPATION /
COLLECTOR POWER DISSIPTION:P
D
/P
C
(mW)
120
100
80
60
40
20
0
0
0.5
1
1.5
Fig.2 Forward current falloff
RELATIVE COLLECTOR CURRENT : Ic (%)
140
120
100
80
60
40
20
0
-25
Fig.3 Forward current vs. forward
voltage
120
100
P
D  
P
C
80
60
40
20
0
V
CE=
5V
I
F=
10mA
−20
0
20
40
60
80
100
0
25
50
75
100
DISTANCE : d (mm)
AMBIENT TEMPERATURE : Ta
(
°C
)
AMBIENT TEMPERATURE : Ta (°C)
Fig.4 Relative output current vs.
distance ( )
Fig.5 Power dissipation / collector power
dissipation vs. ambient temperature
Fig.6 Relative output vs. ambient
temperature

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1137  1133  1733  1257  2694  11  7  10  55  23 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved