BPV11F
Vishay Semiconductors
Silicon NPN Phototransistor
Description
BPV11F is a very high sensitive silicon NPN epitaxial
planar phototransistor in a standard T-1¾ plastic
package.
The epoxy package itself is an IR filter, spectrally
matched to GaAs IR emitters (λ
p
≥
900 nm).
The viewing angle of ± 15° makes it insensible to
ambient straylight.
A base terminal is available to enable biasing and
sensitivity control.
12784
Features
•
•
•
•
•
•
•
Very high radiant sensitivity
Standard T-1¾ (∅ 5 mm) package
IR filter for GaAs emitters (950 nm)
e4
Angle of half sensitivity
ϕ
= ± 15°
Base terminal available
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• Detector for industrial electronic circuitry, mea-
surement and control
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector current
Collector peak current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/
Ambient
t
≤
5 s, 2 mm from body
t
p
/T = 0.5, t
p
≤
10 ms
T
amb
≤
47 °C
Test condition
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
T
stg
T
sd
R
thJA
Value
80
70
5
50
100
150
100
- 55 to + 100
260
350
Unit
V
V
V
mA
mA
mW
°C
°C
°C
K/W
Document Number 81505
Rev. 1.5, 13-Nov-06
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1
BPV11F
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector Emitter Breakdown
Voltage
Collector-emitter dark current
DC Current Gain
Collector-emitter capacitance
Collector - base capacitance
Test condition
I
C
= 1 mA
V
CE
= 10 V, E = 0
V
CE
= 5 V, I
C
= 5 mA, E = 0
V
CE
= 0 V, f = 1 MHz, E = 0
V
CB
= 0 V, f = 1 MHz, E = 0
Symbol
V
(BR)CEO
I
CEO
h
FE
C
CEO
C
CBO
Min
70
1
450
15
19
pF
pF
50
Typ.
Max
Unit
V
nA
Optical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector Light Current
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn-On Time
Turn-Off Time
Cut-Off Frequency
E
e
= 1 mW/cm
2
,
λ
= 950 nm,
I
C
= 1 mA
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω
V
S
= 5 V, I
C
= 5 mA, R
L
= 100
Ω
Test condition
E
e
= 1 mW/cm
2
,
λ
= 950 nm,
V
CE
= 5 V
Symbol
I
ca
ϕ
λ
p
λ
0.5
V
CEsat
t
on
t
off
f
c
Min
3
Typ.
9
± 15
930
900 to 980
130
300
Max
Unit
mA
deg
nm
nm
mV
μs
μs
kHz
6
5
110
Typical Characteristics
T
amb
= 25 °C unless otherwise specified
200
160
I
CEO
- CollectorDark Current (nA)
P
tot
– Total Power Dissipation (mW)
10
4
10
3
V
CE
= 10
V
10
2
120
R
thJA
80
40
0
0
20
40
60
80
100
10
1
10
20
94
8249
40
60
80
100
94
8300
T
amb
– Ambient Temperature (°C)
T
amb
- Ambient Temperature (°C)
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 2. Collector Dark Current vs. Ambient Temperature
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2
Document Number 81505
Rev. 1.5, 13-Nov-06
BPV11F
Vishay Semiconductors
2.0
I
ca rel
- Relative Collector Current
1.8
1.6
1.4
1.2
1.0
0.8
0.6
94
8239
800
V
CE
= 5
V
B – Amplification
V
CE
= 5
V
E
e
= 1 mW/cm
2
λ
= 950 nm
600
400
200
0
20
40
60
80
100
94
8250
0
0.01
0.1
1
10
100
T
amb
- Ambient Temperature (°C)
I
C
– Collector Current (mA)
Figure 3. Relative Collector Current vs. Ambient Temperature
Figure 6. Amplification vs. Collector Current
100
C
CEO
– Collector Emitter Capacitance (pF)
20
16
f = 1 MHz
I
ca
– Collector Light Current (mA)
10
12
1
V
CE
= 5
V
λ
= 950 nm
8
0.1
4
0
0.1
1
10
100
V
CE
– Collector Emitter
Voltage
(V)
0.01
0.01
94
8244
0.1
1
2
10
E
e
– Irradiance (mW/cm )
94
8240
Figure 4. Collector Light Current vs. Irradiance
Figure 7. Collector Base Capacitance vs. Collector Base Voltage
100
I
ca
– Collector Light Current (mA)
λ
= 950 nm
10
E
e
= 1 mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
1
0.1 mW/cm
2
0.05 mW/cm
2
0.02 mW/cm
2
0.1
0.1
94
8245
C
CEO
- Collector Ermitter Capacitance (pF)
20
16
f = 1 MHz
12
8
4
0
0.1
11
0
100
V
CE
- Collector Ermitter
Voltage
(V)
1
10
100
V
CE
– Collector Emitter
Voltage
(V)
94
8247
Figure 5. Collector Light Current vs. Collector Emitter Voltage
Figure 8. Collector Emitter Capacitance vs. Collector
Emitter Voltage
Document Number 81505
Rev. 1.5, 13-Nov-06
www.vishay.com
3
BPV11F
Vishay Semiconductors
12
t
on
/ t
off
- Turn on/Turn off Time (µs)
10
8
6
t
on
V
CE
= 5
V
R
L
= 100
Ω
λ
= 950 nm
4
2
0
t
off
0
4
8
12
16
94
8253
I
C
- Collector Current (mA)
Figure 9. Turn On/Turn Off Time vs. Collector Current
S (λ)
rel
- Relative Spectral Sensitivity
1.0
0.8
0.6
0.4
0.2
0
800
900
1000
1100
94
8258
λ
–
Wavelength
(nm)
Figure 10. Relative Spectral Sensitivity vs. Wavelength
0°
10°
20°
30°
S
rel
- Relative Sensitivity
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
94
8248
Figure 11. Relative Radiant Sensitivity vs. Angular Displacement
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Document Number 81505
Rev. 1.5, 13-Nov-06
BPV11F
Vishay Semiconductors
Package Dimensions in mm
9612200
Document Number 81505
Rev. 1.5, 13-Nov-06
www.vishay.com
5
stm32/stm8
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