Not for New Designs
VSOP584..
www.vishay.com
Vishay Semiconductors
Preamplifier Circuit for IR Remote Control
FEATURES
• Narrow bandpassfilter for all common carrier
frequencies
• High immunity against DC light
• Intelligent AGC to suppress disturbance from
fluorescent lamps and CRTs
• Low power consumption
• Wide supply voltage range
• High immunity against ripple on the supply voltage
22906
• Output active low
• IC manufactured in CMOS technology
• Small QFN package with 2 mm width
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
The VSOP584.. is designed for use in an IR receiver
application together with a photo pin diode. It is a
sophisticated receiver concept that is very sensitive to data
signals and compatible with the most common data formats
for IR remote control. On the other hand it is immune to DC
current caused by DC light sources such as tungsten bulbs.
The disturbance signal of fluorescent lamps is suppressed;
there are no unwanted pulses at the output.
PARTS TABLE
AGC
Carrier
frequency
Package
Pinning
Dimensions (mm)
Mounting
Application
Best remote control code
(1)
RECOMMENDED FOR LONG BURST CODES (AGC4)
36 kHz
38 kHz
VSOP58436
(1)(2)(3)
VSOP58438
(4)(5)(6)
VSOP
1, 4, 5 = N.C., 2 = V
S
, 3 = OUT, 6, 8 = GND, 7 = IN
2.0 W x 2.0 H x 0.76 D
SMD
Remote control
RC-5
(2)
RC-6
(3)
Panasonic
(4)
NEC
(5)
Sharp
(6)
r-map
BLOCK DIAGRAM
(Simplified)
APPLICATION CIRCUIT
100
Ω
+ V
S
V
S
= 2.7 V
to 5.5 V
Bias
Input, from
photodiode
Controlled
gain
amplifier
Band-
pass-
filter
Automatic
gain
control
Automatic
threshold Inte-
control
grator
33 kΩ
Output,
to μC
V
S
VSOP584..
IN
OUT
GND
0.22 μF
Microcontroller
or other logic
to decode the
IR
signal
0V
GND
21536-2
The RC filter is optional to improve the EOS robustness
and the immunity to
supply
voltage ripple. We recommend
to keep the distance between the photodiode and the input
of the VSOP584.. as
short
as possible.
21537-5
Vishay recommends using a photodiode with at least
2.3 mm
2
area. The connection between the photodiode and
pin 7 should be kept as short as possible and carefully
shielded to prevent noise coupling.
Rev. 1.8, 16-Jan-17
1
Document Number: 82444
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Not for New Designs
VSOP584..
www.vishay.com
Vishay Semiconductors
TEST CONDITION
Pin 2
Pin 2
Pin 3
Pin 3
T
amb
≤
85 °C
SYMBOL
V
S
I
S
V
O
I
O
P
tot
T
amb
T
stg
Pin 2, pin 3, MIL-STD-883C
Pin 7, MIL-STD-883C
Pin 2, pin 3, MIL-STD-883C
Pin 7, MIL-STD-883C
V
ESD
V
ESD
V
ESD
V
ESD
VALUE
-0.3 to +6
5
-0.3 to (V
S
+ 0.3)
5
10
-25 to +85
-25 to +85
2000
500
200
100
UNIT
V
mA
V
mA
mW
°C
°C
V
V
V
V
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Supply voltage
Supply current
Output voltage
Output sink current
Power dissipation
Operating temperature range
Storage temperature range
ESD stress, HBM
ESD stress, MM
Note
• Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability.
ELECTRICAL CHARACTERISTICS
(T
amb
= -30 °C to +85 °C)
PARAMETER
Supply voltage
Supply current (pin 2)
Output voltage low (pin 3)
Output voltage high (pin 3)
Internal pull up resistor
(pin 2, pin 3)
Max. input DC current
Min. signal detection current
V
IN
> 0
I
IN-DC
= 0, f
C
= f
BPF
I
IN-DC
= 100 μA, f
C
= f
BPF
I
IN-DC
= 0, f
C
= f
BPF
,
I
IN
= 0.8 nA to 50 μA,
testsignal see fig. 1, BER
≤
2%
T
amb
= + 25 °C
-3 dB, f
0
= 38 kHz
I
IN
= 0, V
S
= 5 V
I
OL
= 2 mA
I
OL
= 0
TEST CONDITION
SYMBOL
V
S
I
S
V
OL
V
OH
R
PU
I
IN-DCmax.
I
IN-min.
I
IN-min.
t
po
f
BPF
B
MIN.
2.7
0.65
-
V
S
- 0.25
-
400
-
-
t
pi
- 6/f
0
f
0
- 4 %
-
TYP.
-
0.85
-
-
33
-
700
5
t
pi
f
0
3.8
MAX.
5.5
1.05
100
-
-
-
1000
10
t
pi
+ 6/f
0
f
0
+ 4 %
-
UNIT
V
mA
mV
V
kΩ
μA
pA
nA
μs
kHz
kHz
Output pulse width
Accuracy of bandpass center
frequency
Bandwidth of bandpassfilter
I
IN
burst length t
pI
V
OUT
output pulse width t
po
one carrier cycle 1/f
C
I
IN
burst length of input signal t
pi
output pulse width t
po
21538
V
OUT
Fig. 1 - Testsignal
Rev. 1.8, 16-Jan-17
2
Document Number: 82444
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Not for New Designs
VSOP584..
www.vishay.com
Vishay Semiconductors
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, V
S
= 3.3 V, unless otherwise specified)
I
IN-min.
- Minimum Detection Current (nA)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1
10
100
1000
f = 10 kHz
f = 100 Hz
f = f
O
1.0
0.9
Output Pulse Width (ms)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
t
po
T
OFF
Testsignal: t
pi
= 0.6 ms
burst repetition time = 1.2 ms
10
1000
100 000
21539
I
IN
- Input Current (nA)
Δ
VS
- AC Ripple on DC Supply Voltage (mV
PP
)
Fig. 2 - Output Pulse Diagram
Fig. 5 - Suppression of Ripple on Supply Voltage
I
IN-min.
- Minimum Detection Current (nA)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0.01
0.1
1
10
100
Wavelength of ambient
illumination:
λ
= 950 nm
I
IN-min.
- Minimum Detection Current (nA)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
- 30
- 10
10
30
50
70
90
DC Input Current (µA)
T
amb
- Ambient Temperature (°C)
Fig. 3 - Sensitivity vs. DC Input Current
Fig. 6 - Sensitivity vs. Temperature
I
IN-min.
- Minimum Detection Current (nA)
2.5
VSOP58438
2.0
0.8
Maximum Envelope Duty Cycle
0.7
0.6
0.5
0.4
0.3
I
IN
= 5 nA
0.2
0.1
0
1.5
1.0
0.5
0
32
34
36
38
40
42
44
0
50
100
150
Frequency (kHz)
Burstlength (Number of Cycles/Burst)
Fig. 4 - Bandpassfilter Characteristic
Fig. 7 - Maximum Envelope Duty Cycle
Rev. 1.8, 16-Jan-17
3
Document Number: 82444
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Not for New Designs
VSOP584..
www.vishay.com
PACKAGE DIMENSIONS
in millimeters
2
For example 38 kHz
Vishay Semiconductors
Marking area
5438
YWW
0.1
PIN 1 indicator
2
0.2 ref.
1. Coplanarity (0.1 mm)
applies to the exposed
pad as well as the
exposed terminals.
2. Package dimension does not
include mold flash, protrusions,
burrs or metal
smearing.
0.76 ± 0.05
1.6 ± 0.15
0.25 x 45°
Chamfered corner
PIN 1 indicator
Pinning:
1. n.c.
2. V
S
3. Out
0.9 ± 0.15
4. n.c.
5. n.c.
6.
GND
7. IN
8.
GND
1
4
Exposed pad
(8 x)
0.3 ± 0.1
0.2 min.
8
5
(8 x)
0.25 ± 0.05
0.5 typ. (6 x)
Proposed hole layout
from component
side
(for reference only)
(8 x)
0.65
technical drawings
according to DIN
specifications
10:1
0.35 (8 x)
Not indicated tolerances ± 0.1
1.3
Drawing-No.: 6.550-5314.03-4
Issue: 1; 07.12.15
0.5 (6 x)
Rev. 1.8, 16-Jan-17
4
Document Number: 82444
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Not for New Designs
VSOP584..
www.vishay.com
ASSEMBLY INSTRUCTIONS
Reflow Soldering
• Set the furnace temperatures for pre-heating and heating
in accordance with the reflow temperature profile as
shown in the diagram. Exercise extreme care to keep the
maximum temperature below 260 °C. The temperature
shown in the profile means the temperature at the device
surface. Since there is a temperature difference between
the component and the circuit board, it should be verified
that the temperature of the device is accurately being
measured
• Handling after reflow should be done only after the work
surface has been cooled off
Manual Soldering
• Use a soldering iron of 25 W or less. Adjust the
temperature of the soldering iron below 300 °C
• Finish soldering within 3 s
• Handle products only after the temperature has cooled
off.
Vishay Semiconductors
VISHAY LEAD (PB)-FREE REFLOW SOLDER PROFILE
300
250
200
T (°C)
Max. 20 s
150
Max. 120 s
100
Max. ramp up 3 °C/s
50
0
0
19800
255 °C
240 °C
217 °C
Max. 260 °C
245 °C
Max. 100 s
Max. ramp down 6 °C/s
50
100
150
t (s)
200
250
300
Max. 2 cycles allowed
Rev. 1.8, 16-Jan-17
5
Document Number: 82444
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
PCB设计
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
