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SFH-309-4-5: 产品类别光电子/LED; 文件大小229KB，共11页; 制造商Osram Opto Semiconductor; 官网地址https://www.osram.com/index-2.jsp

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SFH-309-4-5规格参数

参数名称	属性值
产品种类 Product Category	Phototransistors
制造商 Manufacturer	Osram Opto Semiconductor
RoHS	Details
产品 Product	Phototransistors
封装 / 箱体 Package / Case	T-1
安装风格 Mounting Style	Through Hole
Peak Wavelength	860 nm
Maximum On-State Collector Current	15 mA
Collector- Emitter Voltage VCEO Max	35 V
Dark Current	15 mA
Rise Time	8 us
Fall Time	8 us
Pd-功率耗散 Pd - Power Dissipation	165 mW
最小工作温度 Minimum Operating Temperature	- 40 C
最大工作温度 Maximum Operating Temperature	+ 100 C
Collector-Emitter Breakdown Voltage	35 V
Collector-Emitter Saturation Voltage	200 mV
Half Intensity Angle Degrees	12 deg
高度 Height	5.2 mm
长度 Length	4 mm
Lens Color/Style	Clear
Light Current	3.2 mA
工厂包装数量 Factory Pack Quantity	2000
类型 Type	Silicon NPN Phototransistor
Wavelength	860 nm
宽度 Width	4 mm

SFH-309-4-5相似产品对比

	SFH-309-4-5	SFH-309-FA-3-4	SFH-309	SFH-309-4	SFH-309-FA-5-6	SFH-309-FA-4	SFH-309-3-4	SFH-309-FA
描述			Fixed Inductors 15uH 30% 3.4A shdSMD AEC-Q200	Ferrite Clamp On Cores BB Freq 43u002644 Mat 270Ohm @250MHz Round		ESD Suppressors / TVS Diodes RAILCLAMP 4-LINE 5V 3K LFREE	USB Interface IC USB to Basic Serial UART IC SSOP-16	Photodiodes PHOTODIODE
产品种类 Product Category	Phototransistors	Phototransistors	Phototransistors	Phototransistors	Phototransistors	Phototransistors	Phototransistors	Phototransistors
制造商 Manufacturer	Osram Opto Semiconductor	Osram Opto Semiconductor	Osram Opto Semiconductor	Osram Opto Semiconductor	Osram Opto Semiconductor	Osram Opto Semiconductor	Osram Opto Semiconductor	Osram Opto Semiconductor
RoHS	Details	Details	Details	Details	Details	Details	Details	Details
产品 Product	Phototransistors	Phototransistors	Phototransistors	Phototransistors	Phototransistors	Phototransistors	Phototransistors	Phototransistors
封装 / 箱体 Package / Case	T-1	T-1	T-1	T-1	T-1	T-1	T-1	T-1
安装风格 Mounting Style	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Peak Wavelength	860 nm	900 nm	860 nm	860 nm	900 nm	900 nm	860 nm	900 nm
Maximum On-State Collector Current	15 mA	15 mA	15 mA	15 mA	15 mA	15 mA	15 mA	15 mA
Collector- Emitter Voltage VCEO Max	35 V	35 V	35 V	35 V	35 V	35 V	35 V	35 V
Dark Current	15 mA	15 mA	15 mA	15 mA	15 mA	15 mA	15 mA	15 mA
Pd-功率耗散 Pd - Power Dissipation	165 mW	165 mW	165 mW	165 mW	165 mW	165 mW	165 mW	165 mW
最小工作温度 Minimum Operating Temperature	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C
最大工作温度 Maximum Operating Temperature	+ 100 C	+ 100 C	+ 100 C	+ 100 C	+ 100 C	+ 100 C	+ 100 C	+ 100 C
Collector-Emitter Breakdown Voltage	35 V	35 V	35 V	35 V	35 V	35 V	35 V	35 V
Collector-Emitter Saturation Voltage	200 mV	200 mV	200 mV	200 mV	200 mV	200 mV	200 mV	200 mV
Half Intensity Angle Degrees	12 deg	12 deg	12 deg	12 deg	12 deg	12 deg	12 deg	12 deg
高度 Height	5.2 mm	5.2 mm	5.2 mm	5.2 mm	5.2 mm	5.2 mm	5.2 mm	5.2 mm
长度 Length	4 mm	4 mm	4 mm	4 mm	4 mm	4 mm	4 mm	4 mm
Lens Color/Style	Clear	Black	Clear	Clear	Black	Black	Clear	Black
Light Current	3.2 mA	2 mA	5000 uA	2 mA	5 mA	2000 uA	2 mA	5 mA
工厂包装数量 Factory Pack Quantity	2000	2000	2000	2000	2000	2000	2000	2000
类型 Type	Silicon NPN Phototransistor	Silicon NPN Phototransistor	Silicon NPN Phototransistor	Silicon NPN Phototransistor	Silicon NPN Phototransistor	Silicon NPN Phototransistor	Silicon NPN Phototransistor	Silicon NPN Phototransistor
Wavelength	860 nm	900 nm	860 nm	860 nm	900 nm	900 nm	860 nm	900 nm
宽度 Width	4 mm	4 mm	4 mm	4 mm	4 mm	4 mm	4 mm	4 mm
Rise Time	8 us	7 us	-	7 us	9 us	7 us	7 us	-
Fall Time	8 us	7 us	-	7 us	9 us	7 us	7 us	-

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