MWS11-PHxx-CS
W-CMDA Power Amplifier
A
M I C R O S E M I
C O M P A N Y
P
RELIMINARY
The MWS W-CDMA is a high-
efficiency linear amplifier targeting 3V
mobile handheld systems. The device is
manufactured
in
an
advanced
InGaP/GaAs Heterojunction Bipolar
Transistor (HBT) RF IC fab process. It
is designed for use as a final RF
amplifier in 3V W-CDMA and
CDMA2000, spread spectrum systems,
and other linear applications in the
1800MHz to 2000MHz band.
There are two 16-pin package
versions for this Power Amplifier. One
is a 3mm x 3mm chip scale package
(CSP) with external input/output match
and the other is an internally I/O match-
ed module.
Single 3V Supply
27dBm Linear Output Power
28dB Linear Gain
40% Linear Efficiency
70mA Idle Current
W W W .
Microsemi
.
COM
3V 1920-1980 W-CDMA
Handsets
3V 1850-1910 CMDA2000
Handsets
Spread Spectrum Systems
Other Linear Wireless
IMPORTANT:
For the most current data, consult
MICROSEMI
’s website:
http://www.microsemi.com
Applications
16-Pin Leadless Package
TOP
BOTTOM
3mm
3mm
Actual Size
P
ACKAGE
D
ATA
P
ACKAGE
D
ATA
T
J
(°C)
W-CDMA
CDMA-2000
L
Plastic
MLP
16-PIN
MWS11-PH41-CS
MWS11-PH43-CS
Copyright
©
2000
Rev. 0.2b,2000-11-07
Microsemi
Micro WaveSys
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
MWS11-PHxx-CS
W-CMDA Power Amplifier
A
M I C R O S E M I
C O M P A N Y
P
RELIMINARY
Supply Voltage (V
BAT
) ............................................................................................. 8.0V
DC
Supply Voltage (P
OUT
<31 dBm)............................................................................... 5.0V
DC
Mode Voltage (V
MODE
)............................................................................................. 3.0V
DC
Control Voltage (V
PD
) .............................................................................................. 3.0V
DC
Input RF Power .......................................................................................................... 6dBm
Operating Case Temperature....................................................................... -30°C to 100°C
Storage Temperature .................................................................................... 30°C to 150°C
Note:
Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal.
W W W .
Microsemi
.
COM
RF IN
VCC1
VCC2
VCC
VB1
VB2
RF input. An external series capacitor is required as a DC block. The input match can be improved to < 2:1 by
using a series capacitor and shunt inductor.
Power supply for first stage and interstage match. V
CC
should be fed through an inductor terminated with a
capacitor on the supply side.
Power supply for Second stage and interstage match. V
CC
should be fed through an inductor terminated with a
capacitor on the supply side.
Supply for bias reference circuits.
First stage control voltage. The VB1 pin can be connected with the other stage control voltages into a single
reference voltage through an external resistor bridge.
Second stage control voltage. The VB2 pin can be connected with the other stage control voltages into a single
reference voltage through an external resistor bridge.
RF Output and Power supply for final stage. This is the unmatched collector output of the third stage. A DC
Block is required following the matching components. The biasing may be provided via a parallel L-C set for
resonance at the operating frequency of 1920MHz to 1980 MHz. It is important to select an inductor with very
low DC resistance with a 1A current rating. Alternatively, shunt microstrip techniques are also applicable and
provide very low DC resistance. Low frequency bypassing is required for stability. There are three pins
designated as RF OUT.
This is a circuit level ground, isolated from the backside ground contact.
Ground for First Stage. This ground should be isolated from the backside ground contact.
Ground for Second Stage. This ground should be isolated from the backside ground contact.
Ground connection. The backside of the package should be soldered to a top side ground pad which is
connected to the ground plane with multiple vias. The pad should have a short thermal path to the ground plane.
RF OUT
GND
GND1
GND2
PKGGND
P
ACKAGE
D
ATA
P
ACKAGE
D
ATA
Copyright
©
2000
Rev. 0.2b,2000-11-07
Microsemi
Micro WaveSys
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
MWS11-PHxx-CS
W-CMDA Power Amplifier
A
M I C R O S E M I
C O M P A N Y
P
RELIMINARY
Unless otherwise specified, the following specifications apply over the operating ambient temperature -35°C
≤
T
A
≤
85°C except where
otherwise noted. Test conditions: [Enter Test Conditions Here]
Parameter
Frequency Range
Nominal Linear Output Power
(WCDMA Modulation)
Linear Gain
Second Harmonic
Third Harmonic
Fourth Harmonic
Total Linear Efficiency
Adjacent Channel Power
Rejection
@5 MHz
@10 MHz
Reverse Inter modulation
@
Symbol
Test Conditions
T = 25°C, V
CC
= 3.4V at 27dBm output power
RMS power as defined by 3GPP
T = 25°C, V
CC
= 3.4V at 27dBm output power
RMS power as defined by 3GPP
T = 25°C, V
CC
= 3.4V at 27dBm output power
RMS power as defined by 3GPP
T = 25°C, V
CC
= 3.4V at 27dBm output power
RMS power as defined by 3GPP
T = 25°C, V
CC
= 3.4V at 27dBm output power
RMS power as defined by 3GPP
T = 25°C, V
CC
= 3.4V at 27dBm output power
RMS power as defined by 3GPP
T = 25°C, V
CC
= 3.4V at 27dBm output power
RMS power as defined by 3GPP
-50 dBm to 27 dBm output. Power V
CC
3.0 to
5.0V, T = -10 to +75°C, load VSWR = 1:1 to
5:1, all phases
Levels at the Output: interferer –25 dBm @
1790 MHz, useful signal 27 dBm @ 1980
MHz
MWS11-PHxx-CS
Min
Typ
Max
1920
27
25
29
27
-35
-40
-45
35
-45
-60
40
-40
-50
-33
-43
-35
-50
70
EVM and Peak Code Domain Error Refer to
3GPP spec. 3G TS 25.101
Eq. To –132 dBm / Hz
V
CC
= 3.0V, -10°C < Temp < +75°C WCDMA
Modulation
17.5
-79
-71
-66
25
< 2:1
5:1
10
3.4
27
1980
30
28
Units
MHz
dBm
dB
dB
dB
dB
%
dBc
dBc
dBm
dBm
mA
%
dBm
dBm
dBm
W W W .
Microsemi
.
COM
2
×
F
TX
−
F
INT
=
2110
MHz
Output Power Dynamic
Quiescent Current @ Low Power
Modulation Accuracy (EVM)
Noise Power in Band
925-960 MHz @ 100 KHz BW
1805-1880 MHz @ 100 KHz BW
2110-2170 MHz @ 3.84 MHz BW
Nominal Linear Output Power
Input VSWR
Output VSWR
Leakage Current (Down Power)
Power supply Voltage
3.04
5.0
µA
V
S
PECIFICATIONS
S
PECIFICATIONS
Copyright
©
2000
Rev. 0.2b,2000-11-07
Microsemi
Micro WaveSys
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
MWS11-PHxx-CS
W-CMDA Power Amplifier
A
M I C R O S E M I
C O M P A N Y
P
RELIMINARY
W W W .
Microsemi
.
COM
Figure 1
– E
valuation Board for the W-CDMA Power Amp
V
REF
2.8V
C15
10-50mF
T1
W =10mil
L=40mil
R2
640 ohm
C16
100 pF
C8
100pF
C17
100pF
C9
100pF
C12
0.1µF
C13
10-50mF
V
CC
3.5V
C10
100pF
R1
295 ohm
VB2
VC C2
VB1
VC C
T2
W =20mil
L=825mil
W =48mil
L=50mil
RF O UT
W =48mil
L=163mil
C6
2.2pF
C7
2.2pF
50 ohm
line
RF IN
50 ohm
line
C16
1.8pF
W =48mil
L=150mil
W =48mil W 1=10mil
L=5mil W 2=48mil
C3
L=20mil
2.7pF
M W S11-
PH 41-C S
A
PPLICATION
A
PPLICATION
Figure 2
– E
valuation Board for the W-CDMA Schematic
Copyright
©
2000
Rev. 0.2b,2000-11-07
Microsemi
Micro WaveSys
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 4
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