C
O N F I D E N T I A L
MWS11-GB11-xx
InGaP HBT Gain Block
A
M I C R O S E M I
C O M P A N Y
P
REVIEW
This general purpose amplifier is a low
cost, broadband RFIC manufactured with
an InGaP/GaAs Heterojunction Bipolar
Transistor (HBT) process (MOCVD).
This RFIC amplifier was designed as an
easily cascadable 50 ohm gain block. The
device is self-contained with 50 ohm input
and output impedance. Applications in-
clude IF and RF amplification in wireless/
wired voice and data communication
products and broadband test equipment
operating up to 6 GHz.
This RFIC amplifier is initially
available in a plastic SOT-89 3-Pin
package to handle P1dB output power up
to 19dBm (5V). The same RFIC will be
available later in an advanced Microsemi
Gigamite™ package, with significantly
smaller footprint for applications where
board space is at a premium.
Advanced InGaP HBT
DC to 6GHz
Single +5V Supply
Small Signal Gain = 16dB
P1dB = 19dBm (5V),
f=1GHz
SOT-89 3-Pin, & Gigamite
Packages
W W W .
Microsemi
.
COM
Broadband Gain Blocks
IF or RF buffer Amplifiers
Driver Stage for Power
Amps
Final Power Amp for Low to
IMPORTANT:
For the most current data, consult
MICROSEMI
’s website:
http://www.microsemi.com
Medium Power Applications
Broadband Test Equipment
45
Gain (dB), Pout (dBm), Current (A)00
40
35
30
25
20
15
10
5
0
-5
-1 0
-2 0
-1 5
-1 0
-5
0
5
P in (d B m )
10
15
P out
G a in
C u rre n t
f = 5 .7 G H z
Vcc = 5 V
N o m in a l C u r r e n t
20 m A
MWS11-GB11
MWS11-GB11
PK
Plastic SOT-89
3 Pin
Gigamite
MWS11GB11-G1
MWS11GB11-S1
Note: Available in Tape & Reel.
Append the letter “T” to the part number. (i.e. MSW11GB11-S89T)
Copyright
©
2000
Rev. 0.2,2000-12-15
Microsemi
11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121
Page 1
C
O N F I D E N T I A L
MWS11-GB11-xx
InGaP HBT Gain Block
A
M I C R O S E M I
C O M P A N Y
P
REVIEW
DC Supply Voltage..................................................................................................5.0 Vdc
Absolute Max. Limit...................................................................................................60mA
RF Input Power (Pin)...............................................................................................10 dBm
Operating Case Temperature ..........................................................................-40º to +85ºC
Storage Temperature.....................................................................................-60º to +150ºC
Note:
Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal.
T a b is
GND
W W W .
Microsemi
.
COM
1
2
3
R F IN
GND
RF OUT/
B IA S
Plastic SOT-89 3-Pin
THERMAL RESISTANCE
-
JUNCTION TO AMBIENT
,
θ
JA
T
HERMAL
R
ESISTANCE
-J
UNCTION TO
C
ASE
,
θ
JC
T
HERMAL
R
ESISTANCE
-J
UNCTION TO
L
EAD
,
θ
JT
Gigamite
THERMAL RESISTANCE
-
JUNCTION TO AMBIENT
,
PK P
ACKAGE
(Top View)
PK
XX
°C/W
149°C/W
XX
°C/W
T
HERMAL
R
ESISTANCE
-J
UNCTION TO
C
ASE
,
θ
JC
T
HERMAL
R
ESISTANCE
-J
UNCTION TO
L
EAD
,
θ
JT
θ
JA
XX
°C/W
XX
°C/W
XX
°C/W
Junction Temperature Calculation: T
J
= T
A
+ (P
D
x
θ
JA
).
The
θ
JA
numbers are guidelines for the thermal performance of the device/pc-board
system. All of the above assume no ambient airflow.
RF IN
GND
RF Input pin. A DC blocking capacitor should be used in most applications.
Ground connection. Traces should be minimized and connect immediately to ground.
RF output and bias pin. In the bias network, a resistor is selected to set the DC current into this pin as:
RF OUT /
BIAS
R
=
(
V
CC
−
V
D
)
I
CC
P
ACKAGE DATA
P
ACKAGE DATA
Note that maximum current limit I
CC
must not be exceeded and a resistor should always be used. A DC blocking
capacitor should also be used.
Copyright
©
2000
Rev. 0.2,2000-12-15
Microsemi
11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121
Page 2
C
O N F I D E N T I A L
MWS11-GB11-xx
InGaP HBT Gain Block
A
M I C R O S E M I
C O M P A N Y
P
REVIEW
Unless otherwise specified, the following specifications apply over the operating ambient temperature -40°C
≤
T
A
≤
+85°C except where
otherwise noted. Test conditions: [Enter Test Conditions Here]
Parameter
Symbol
Test Conditions
MWS11-GB11-xx
Min
Typ
Max
DC
16
34
f=1 GHz
f=1.5 GHz
13
3.3
16
4
5
60
6
19
Units
W W W .
Microsemi
.
COM
POWER SUPPLY
Application Frequency Range
Linear Output Power
rd
Output 3 Order Intermod
Product*
Small-Signal Gain
Noise Figure
Supply Voltage
Supply Current
f
P1dB
IP3
G
NF
V
CC
f=2GHz
GHz
dBm
dBm
dB
dB
V
mA
3.5
4.6
20
DC to
>6000
5.5
11.3
11.3
11.4
11.5
11.5
9.9
0.05
7.6
<1.8:1
<2.5:1
<1.8:1
<2.5:1
34.5
18.5
16.5
OVERALL
Frequency Range
1dB Bandwidth
T=25°C, V
D
=5.5V, I
CC
=70mA
Freq = 100MHz
Freq = 1000MHz
Freq = 2000MHz
Freq = 3000MHz
Freq = 4000MHz
Freq = 6000MHz
100MHz to 2000MHz
Freq = 1000MHz
MHz
GHz
dB
dB
dB
dB
dB
dB
dB
dB
Gain
10.2
Gain Flatness
Noise Figure
Input VSWR
Output VSWR
Output I
P3
Output P
1dB
Reverse Isolation
Freq = 1000MHz
Freq = 1000MHz
Freq = 1000MHz
dBm
dBm
dB
THERMAL
Maximum Measured Junction
Temp at DC Bias Conditions
T
A
= +85°C
142
1.4x10
5
3.4x10
9
1.8x10
3
°C
Years
†
Years
†
Years
†
T
A
= +85°C
Mean Time Between Failures
T
A
= +25°C
T
A
= -40°C
*
Output power at 1dB gain compression point, f=1 GHz
†
E
LECTRICALS
E
LECTRICALS
In accordance with Manufacturer design
Copyright
©
2000
Rev. 0.2,2000-12-15
Microsemi
11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121
Page 3
C
O N F I D E N T I A L
MWS11-GB11-xx
InGaP HBT Gain Block
A
M I C R O S E M I
C O M P A N Y
P
REVIEW
W W W .
Microsemi
.
COM
Vcc
20
Ω
0.01 pF
1.0
µ
F
1
2
3
220 nH
150 pF
RF IN
50
Ω µ
strip
150 pF
RF OUT
50
Ω µ
strip
Vd
Vcc
1.0
µ
F
0.01µ F
20
Ω
100 pF
1
2
3
TL,
/4
150 pF
RF IN
50
Ω µ
strip
150 pF
RF OUT
50
Ω µ
strip
A
PPLICATION
A
PPLICATION
Vd
Copyright
©
2000
Rev. 0.2,2000-12-15
Microsemi
11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121
Page 4
C
O N F I D E N T I A L
MWS11-GB11-xx
InGaP HBT Gain Block
A
M I C R O S E M I
C O M P A N Y
P
REVIEW
W W W .
Microsemi
.
COM
PK
A
K
I
3-Pin Plastic TO-89
D
Dim
A
B
C
D
E
F
G
H
I
J
K
Note:
B
J
H
F
E
G
C
M
ILLIMETERS
MIN
MAX
4.30
4.70
2.30
2.70
1.30
1.70
0.35
0.45
0.35
0.50
0.30
0.50
1.50 BSC
0.40
0.60
0.50
0.50
3.90
4.30
1.55
1.75
I
NCHES
MIN
MAX
0.169
0.185
0.090
0.106
0.051
0.066
0.013
0.017
0.013
0.019
0.011
0.019
0.059 BSC
0.015
0.023
0.019
0.019
0.153
0.169
0.061
0.068
1. Dimensions do not include mold flash or protrusions;
these shall not exceed 0.155mm(.006”) on any side.
Lead dimension shall not include solder coverage.
MECHANICALS
MECHANICALS
Copyright
©
2000
Rev. 0.2,2000-12-15
Microsemi
11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121
Page 5
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