Bulletin I2136 04/97
SAFE
IR
Series
30TPS..
PHASE CONTROL SCR
V
T
I
TSM
< 1.3V @ 20A
= 300A
V
RRM
800 to 1600V
Description/Features
The 30TPS..
SAFE
IR
series of silicon controlled
rectifiers are specifically designed for medium
power switching and phase control applications.
The glass passivation technology used has reli-
able operation up to 125°C junction temperature.
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identi-
cal package outlines.
Major Ratings and Characteristics
Characteristics
I
T(AV)
Sinusoidal
waveform
I
RMS
V
RRM
/ V
DRM
I
TSM
V
T
dv/dt
di/dt
T
J
@ 20 A, T
J
= 25°C
30
up to 1600
300
1.3
500
150
- 40 to 125
A
V
A
V
V/µs
A/µs
°C
Package Outline
Units
A
30TPS..
20
TO-247AC
1
30TPS..
SAFE
IR
Series
Bulletin I2136 04/97
Voltage Ratings
Part Number
V
RRM
/V
DRM
, max. repetitive
peak and off-state voltage
V
30TPS08
30TPS12
30TPS16
800
1200
1600
V
RSM
, maximum non repetitive
peak reverse voltage
V
900
1300
1700
I
RRM
/I
DRM
125°C
mA
10
Absolute Maximum Ratings
Parameters
I
T(AV)
Max. Average On-state Current
I
RMS
Max. RMS On-state Current
I
TSM
Max. Peak One Cycle Non-Repetitive
Surge Current
I
2
t
Max. I
2
t for Fusing
30TPS..
20
30
250
300
310
442
Units
A
Conditions
@ T
C
= 95° C, 180° conduction half sine wave
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
A
2
s
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
A
2
√s
V
mΩ
V
mA
T
J
= 25 °C
T
J
= 125 °C
mA
mA
V/µs
A/µs
V
R
= rated V
RRM
/ V
DRM
t = 0.1 to 10ms, no voltage reapplied
@ 20A, T
J
= 25°C
T
J
= 125°C
I
2
√t
V
TM
r
t
Max. I
2
√t
for Fusing
Max. On-state Voltage Drop
On-state Slope Resistance
4420
1.3
12
1.0
0.5
10
100
200
500
150
V
T(TO)
Threshold Voltage
I
RM
/I
DM
Max.Reverse and Direct
Leakage Current
I
H
I
L
Max. Holding Current
Max. Latching Current
Anode Supply = 6V, Resistive load, Initial I
T
=1A
Anode Supply = 6V, Resistive load
dv/dt Max. Rate of Rise of off-state Voltage
di/dt
Max. Rate of Rise of turned-on Current
2
30TPS..
SAFE
IR
Series
Bulletin I2136 04/97
Triggering
Parameters
P
GM
Max. Peak Gate Power
P
G(AV)
Max. Average Gate Power
+ I
GM
Max. Peak Positive Gate Current
- V
GM
Max. Peak Negative Gate Voltage
I
GT
Max. Required DC Gate Current
to Trigger
30TPS..
8.0
2.0
1.5
10
60
45
20
Units
W
Conditions
A
V
mA
Anode supply = 6V, resistive load, T
J
= - 10°C
Anode supply = 6V, resistive load, T
J
= 25°C
Anode supply = 6V, resistive load, T
J
= 125°C
V
Anode supply = 6V, resistive load, T
J
= - 10°C
Anode supply = 6V, resistive load, T
J
= 25°C
Anode supply = 6V, resistive load, T
J
= 125°C
T
J
= 125°C, V
DRM
= rated value
mA
T
J
= 125°C, V
DRM
= rated value
V
GT
Max. Required DC Gate Voltage
to Trigger
2.5
2.0
1.0
V
GD
Max. DC Gate Voltage not to Trigger
I
GD
Max. DC Gate Current not to Trigger
0.25
2.0
Switching
Parameters
t
gt
t
rr
t
q
Typical Turn-on Time
Typical Reverse Recovery Time
Typical Turn-off Time
30TPS..
0.9
4
110
Units
µs
T
J
= 25°C
T
J
= 125°C
Conditions
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
30TPS..
- 40 to 125
- 40 to 125
0.8
Units
°C
Conditions
R
thJC
Max. Thermal Resistance Junction
to Case
R
thJA
Max. Thermal Resistance Junction
to Ambient
R
thCS
Max. Thermal Resistance Case
to Heatsink
wt
T
Approximate Weight
Mounting Torque
Min.
Max.
Case Style
°C/W
DC operation
40
0.2
Mounting surface, smooth and greased
6 (0.21)
6 (5)
12 (10)
g (oz.)
Kg-cm
(lbf-in)
Jedec (Modified)
TO-247AC
3
30TPS..
SAFE
IR
Series
Bulletin I2136 04/97
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
130
30TPS.. Series
R
thJC
(DC) = 0.8 °C/W
130
30TPS.. Series
R
thJC
(DC) = 0.8 °C/W
120
Conduction Angle
120
110
Conduction Period
110
30°
100
60°
90°
120°
180°
100
30°
90
60°
90°
120°
0
5
10
15
180° DC
25
30
35
90
0
5
10
15
20
25
Average On-state Current (A)
80
20
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Maximum Average On-state Power Loss (W)
Maximum Average On-state Power Loss (W)
Fig. 2 - Current Rating Characteristics
80
DC
180°
120°
90°
60°
30°
60
50
40
30
20
10
0
0
5
10
15
20
25
30
Average On-state Current (A)
180°
120°
90°
60°
30°
RMS Limit
60
40 RMS Limit
Conduction Angle
Conduction Period
20
30TPS.. Series
T
J
= 125°C
0
0
10
20
30
40
50
Average On-state Current (A)
30TPS.. Series
T
J
= 125°C
Fig. 3 - On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
280
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
260
Initial T
J
= 125°C
240
220
200
180
160
140
120
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 4 - On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
300
280
260
240
220
200
180
160
140
120
0.01
30TPS.. Series
0.1
Pulse Train Duration (s)
1
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T
J
= 125°C
No Voltage Reapplied
Rated V
RRM
Reapplied
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
30TPS.. Series
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
4
30TPS..
SAFE
IR
Series
Bulletin I2136 04/97
1000
Instantaneous On-state Current (A)
T
J
= 25°C
T
J
= 125°C
100
10
30TPS.. Series
1
0
1
2
3
4
5
6
7
Instantaneous On-state Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
Transient Thermal Impedance Z
thJC
(°C/W)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
0.1
D = 0.08
Steady State Value
(DC Operation)
Single Pulse
30TPS.. Series
0.01
0.0001
0.001
0.01
Square Wave Pulse Duration (s)
0.1
1
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
100
Instantaneous Gate Voltage (V)
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/dt: 10 V, 65 ohms
10
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(a)
(b)
TJ = -10 °C
TJ = 25 °C
TJ = 125 °C
1
VGD
IGD
0.1
0.001
0.01
(4)
(3)
(2)
(1)
30TPS.. Series
0.1
1
Frequency Limited by PG(AV)
10
100
Instantaneous Gate Current (A)
Fig. 9 - GateCharacteristics
5
PCB设计
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