N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз
| N303AS | N303AP | ISL9N303AS3 | ISL9N303AP3 | ISL9N303AS3ST | |
|---|---|---|---|---|---|
| 描述 | N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз | N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз | N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз | N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз | N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз |
| 是否Rohs认证 | - | - | 符合 | 符合 | 符合 |
| 零件包装代码 | - | - | TO-262AA | TO-220AB | D2PAK |
| 包装说明 | - | - | TO-262AA, 3 PIN | FLANGE MOUNT, R-PSFM-T3 | TO-263AB, 3 PIN |
| 针数 | - | - | 3 | 3 | 4 |
| Reach Compliance Code | - | - | _compli | unknow | _compli |
| ECCN代码 | - | - | EAR99 | EAR99 | EAR99 |
| 外壳连接 | - | - | DRAIN | DRAIN | DRAIN |
| 配置 | - | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | - | - | 30 V | 30 V | 30 V |
| 最大漏极电流 (Abs) (ID) | - | - | 25 A | 25 A | 25 A |
| 最大漏极电流 (ID) | - | - | 75 A | 75 A | 75 A |
| 最大漏源导通电阻 | - | - | 0.005 Ω | 0.005 Ω | 0.005 Ω |
| FET 技术 | - | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | - | - | TO-262AA | TO-220AB | TO-263AB |
| JESD-30 代码 | - | - | R-PSIP-T3 | R-PSFM-T3 | R-PSSO-G2 |
| JESD-609代码 | - | - | e3 | e3 | e3 |
| 元件数量 | - | - | 1 | 1 | 1 |
| 端子数量 | - | - | 3 | 3 | 2 |
| 工作模式 | - | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | - | - | 175 °C | 175 °C | 175 °C |
| 封装主体材料 | - | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | - | - | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | - | - | IN-LINE | FLANGE MOUNT | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | - | - | NOT APPLICABLE | NOT APPLICABLE | 260 |
| 极性/信道类型 | - | - | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | - | - | 215 W | 215 W | 215 W |
| 认证状态 | - | - | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | - | - | NO | NO | YES |
| 端子面层 | - | - | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) |
| 端子形式 | - | - | THROUGH-HOLE | THROUGH-HOLE | GULL WING |
| 端子位置 | - | - | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | - | - | NOT APPLICABLE | NOT APPLICABLE | NOT SPECIFIED |
| 晶体管应用 | - | - | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | - | - | SILICON | SILICON | SILICON |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
